HMC442LM1
v01.0807
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Typical Applications
The HMC442LM1 is an ideal gain block or driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
Features
Saturated Power: +23 dBm @ 27% PAE
Gain: 14 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
11
LINEAR & POWER AMPLIFIERS - SMT
• VSAT
Functional Diagram
General Description
The HMC442LM1 is a broadband 17.5 to 24 GHz
GaAs PHEMT MMIC Medium Power Amplifier in a
SMT leadless chip carrier package. The LM1 is a true
surface mount broadband millimeterwave package
offering low loss & excellent I/O match, preserving
MMIC chip performance. The amplifier provides
14 dB of gain and +23 dBm of saturated power at
27% PAE from a +5V supply voltage. This 50 Ohm
matched amplifier has integrated DC blocks on RF
in and out and makes an ideal linear gain block,
transmit chain driver or LO driver for HMC SMT mixers.
As an alternative to chip-and-wire hybrid assem-
blies the HMC442LM1 eliminates the need for
wirebonding, thereby providing a consistent con-
nection interface for the customer.
Electrical Specifi cations,
T
A
= +25° C, Vdd = 5V, Idd = 85 mA*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
17
10.5
Min.
Typ.
17.5 - 21.0
13
0.02
10
7
20
23
28
7
85
18.5
0.03
10.5
Max.
Min.
Typ.
21.0 - 24.0
14
0.02
10
8
21.5
23.5
27
6.5
85
0.03
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85 mA typical.
11 - 106
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LM1
v01.0807
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Broadband Gain & Return Loss
20
Gain vs. Temperature
20
16
10
RESPONSE(dB)
GAIN (dB)
12
+25 C
+85 C
-40 C
0
S21
S11
S22
8
-10
4
11
25
26
27
-20
29
26
23
20
FREQUENCY (GHz)
17
14
0
16
17
18
19
20 21 22 23 24
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
-5
-10
-15
-15
+25 C
+85 C
-40 C
-20
16
17
18
19
20 21 22 23 24
FREQUENCY (GHz)
25
26
27
-20
16
17
18
19
20 21 22 23 24
FREQUENCY (GHz)
25
26
27
P1dB vs. Temperature
30
Psat vs. Temperature
30
26
P1dB (dBm)
Psat (dBm)
26
22
22
+25 C
+85 C
-40 C
18
+25 C
+85 C
-40 C
18
14
14
10
16
17
18
19
20 21 22 23 24
FREQUENCY (GHz)
25
26
27
10
16
17
18
19
20 21 22 23 24
FREQUENCY (GHz)
25
26
27
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 107
LINEAR & POWER AMPLIFIERS - SMT
HMC442LM1
v01.0807
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Power Compression @ 18 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-10
-6
-2
2
6
INPUT POWER (dBm)
10
14
Power Compression @ 23 GHz
32
Pout (dBm), GAIN (dB), PAE (%)
28
24
20
16
12
8
4
0
-10
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
11
LINEAR & POWER AMPLIFIERS - SMT
-6
-2
2
6
10
14
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
Noise Figure vs. Temperature
10
30
NOISE FIGURE (dB)
8
IP3 (dBm)
26
+25 C
+85 C
-40 C
6
22
4
+ 25C
+85 C
-40 C
18
2
14
16
18
20
22
FREQUENCY (GHz)
24
26
0
16
18
20
22
FREQUENCY (GHz)
24
26
Gain & Power vs.
Supply Voltage @ 23 GHz
26
GAIN (dB), P1dB (dBm), Psat (dBm)
24
22
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
+25 C
+85 C
-40 C
20
18
16
14
12
10
2.7
Gain
P1dB
Psat
3.1
3.5
3.9
4.3
4.7
5.1
5.5
16
17
18
19
Vdd Supply Voltage (Vdc)
20 21 22 23 24
FREQUENCY (GHz)
25
26
27
11 - 108
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LM1
v01.0807
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc,
Idd = 85 mA)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-8.0 to 0 Vdc
+16 dBm
175 °C
0.491 W
183 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+2.7
+3.0
Idd (mA)
82
85
87
79
83
+3.3
86
Note: Amplifier will operate over full voltage range shown above
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 109
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. MATERIAL: PLASTIC
2. PLATING: GOLD OVER NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. ALL TOLERANCES ARE ±0.005 [±0.13].
5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND.
6.
•
INDICATES PIN 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LM1
v01.0807
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Pin Descriptions
Pin Number
1, 3, 5, 6
Function
N/C
Description
No connection
Interface Schematic
11
LINEAR & POWER AMPLIFIERS - SMT
2
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 μF are required.
4
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
7
Vgg
Gate control for amplifier. Adjust to achieve Id of 85 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note.
8
RFIN
This pin is AC coupled
and matched to 50 Ohms.
11 - 110
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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