电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GBU8G/51

产品描述Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN
产品类别分立半导体    二极管   
文件大小100KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

GBU8G/51概述

Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN

GBU8G/51规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
包装说明R-PSFM-T4
针数4
制造商包装代码CASE GBU
Reach Compliance Codeunknown
其他特性UL RECOGNIZED
最小击穿电压400 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PSFM-T4
JESD-609代码e0
最大非重复峰值正向电流200 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压400 V
表面贴装NO
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
GBU8A thru GBU8M
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style GBU
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, power supply,
switching mode power supply, adapter, audio
equipment and home appliances applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
8A
50 V to 1000 V
200 A
5 µA
1.0 V
150 °C
MECHANICAL DATA
Case:
GBU
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified output current at
T
C
= 60 °C
(1)
T
A
= 40 °C
(2)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
GBU8A GBU8B GBU8D GBU8G GBU8J
50
35
50
100
70
100
200
140
200
400
280
400
8.0
3.9
200
166
- 55 to + 150
600
420
600
GBU8K GBU8M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
super-imposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
Notes:
(1) Unit case mounted on aIuminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 88616
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1746  1853  184  1576  117  26  49  20  30  9 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved