MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
September 2009
MOC8111M, MOC8112M, MOC8113M
6-Pin DIP Optocoupler for Power Supply Applications
(No Base Connection)
Features
■
High isolation voltage
■
■
Description
The MOC811XM series consists of a Gallium Arsenide
IRED coupled with an NPN phototransistor. The base of
the transistor is not bonded to an external pin for
improved noise immunity.
■
■
■
7500 VAC Peak—1 second
High BV
CEO
minimum 70 Volts
Current transfer ratio in selected groups:
MOC8111M: 20% min.
MOC8112M: 50% min.
MOC8113M: 100% min.
Maximum switching time in saturation specified
Underwriters Laboratory (UL) recognized
(File #E90700, Vol. 2)
IEC60747-5-2 approved (ordering option V)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Schematic
ANODE 1
6 N/C
6
CATHODE 2
5 COLLECTOR
1
6
1
N/C 3
4 EMITTER
6
1
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
P
D
T
OPR
T
STG
T
SOL
INPUT LED
I
F
I
F
(pk)
V
R
P
D
Parameter
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (Wave Solder)
(1/16" from case, 10 sec. duration)
Forward Current – Continuous
Forward Current – Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
260
3.5
-40 to +100
-40 to +150
260
Unit
mW
mW/°C
°C
°C
°C
90
3
6
135
1.8
200
2.67
mA
A
V
mW
mW/°C
mW
mW/°C
OUTPUT TRANSISTOR
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
www.fairchildsemi.com
2
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
V
R
C
J
I
R
BV
CEO
BV
ECO
I
CEO
C
CE
Input Forward Voltage
Reverse Voltage
Capacitance
Reverse Leakage Current
Breakdow Voltage, Collector to Emitter
Breakdow Voltage, Emitter to Collector
Leakage Current, Collector to Emitter
Capacitance, Collector to Emitter
I
F
= 60mA
I
F
= 10mA
I
R
= 10µA
V
F
= 0V, f = 1.0MHz
V
F
= 1V, f = 1.0MHz
V
R
= 3.0V
I
C
= 1.0mA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CE
= 0 V, f = 1MHz
70
7
5
8
50
DETECTOR
V
V
V
pF
6.0
1.35
1.15
15
50
65
.35
10
µA
1.65
1.50
V
pF
V
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Isolation Characteristics
Symbol
V
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 0, f = 1MHz
Min.
7500
Typ.
0.5
Max.
Units
V
AC(PK)
pF
Transfer Characteristic
Symbol
CTR
Characteristics
Output/Input Current
Transfer Ratio
Test Conditions
I
F
= 10mA, V
CE
= 5V
Device
MOC8111M
MOC8112M
MOC8113M
Min.
20
50
100
Typ. Max. Units
%
DC CHARACTERISTICS
V
CE(SAT)
Collector-Emitter
Saturation Voltage
AC CHARACTERISTICS
Non-Saturated Switching Times
t
on
t
off
t
on
t
r
t
off
t
f
Turn-On Time
Turn-Off Time
Turn-On Time
Rise-Time
Turn-Off Time
Fall-Time
I
F
= 10mA, I
C
= 2.5mA
All
0.27
0.4
V
R
L
= 100
Ω
, I
C
= 2mA,
V
CC
= 10V, See Figure 7
All
All
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
6.0
5.5
3.0
4.2
2.0
3.0
18
23
11
14
10
10
5.5
8.0
4.0
6.0
34
39
20
24
µs
µs
µs
µs
µs
µs
Saturated Switching Times
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
www.fairchildsemi.com
3
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
www.fairchildsemi.com
4
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Typical Performance Characteristics
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.4
T
A
= 25°C
V
CE
= 5.0 V
1.2
Normalized to
I
F
= 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.0
1.5
T
A
= -55°C
1.4
NORMALIZED CTR
100
0.8
0.6
1.3
1.2
T
A
= 25°C
1.1
T
A
= 100°C
1.0
1
10
0.4
0.2
0.0
0
5
10
15
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
1.6
V
CE (sat)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 3 Normalized CTR vs. Ambient Temperature
Fig. 4 Collector Emitter Saturation Voltage
vs Collector Current
100
1.4
I
F
= 5 mA
10
NORMALIZED CTR
1.2
I
F
= 10 mA
1.0
1
I
F
= 2.5 mA
0.1
0.8
I
F
= 20 mA
0.6
Normalized to
I
F
= 10 mA
T
A
= 25°C
-50
-25
0
25
50
75
100
125
0.01
I
F
= 5 mA
T
A
= 25°C
0.001
0.01
0.1
1
I
F
= 10 mA
I
F
= 20 mA
0.4
-75
10
T
A
- AMBIENT TEMPERATURE (°C)
I
C
- COLLECTOR CURRENT (mA)
Fig. 5 Switching Speed vs. Load Resistor
1000
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25°C
1e+1
Fig. 6 Dark current vs. Ambient Temperature.
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (µA)
1e+0
V
CE
= 10V
SWITCHING SPEED - (µs)
100
1e-1
T
off
T
f
10
1e-2
1e-3
T
on
1
Tr
1e-4
1e-5
0.1
0.1
1
10
100
1e-6
0
25
50
75
100
125
R-LOAD RESISTOR (kΩ)
T
A
- AMBIENT TEMPERATURE (°C)
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
www.fairchildsemi.com
5
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