SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through–the–board mounting.
MOC216-M
MOC217-M
FEATURES
• UL Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
• Convenient Plastic SOIC–8 Surface Mountable Package Style
• Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC–8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input–Output Isolation of 2500 Vac (rms) Guaranteed
CATHODE 2
7 BASE
ANODE 1
8 N/C
APPLICATIONS
• Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics
N/C 3
6 COLLECTOR
N/C 4
5 EMITTER
Marking Information:
• MOC215-M = 215
• MOC216-M = 216
• MOC217-M = 217
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2)
(60 Hz, 1 minute duration)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
V
ISO
P
D
T
A
T
stg
2500
250
2.94
-40 to +100
-40 to +125
Vac(rms)
mW
mW/°C
°C
°C
V
CEO
V
CBO
V
ECO
I
C
P
D
30
70
7.0
150
150
1.76
V
V
V
mA
mW
mW/°C
I
F
I
F
(pk)
V
R
P
D
60
1.0
6.0
90
0.8
mA
A
V
mW
mW/°C
Symbol
Value
Unit
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
Characteristic
EMITTER
Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
Output Collector Current
(4)
MOC215-M
MOC216-M
MOC217-M
(I
F
= 1.0 mA, V
CE
= 5.0 V)
(I
C
= 100µA, I
F
= 1.0mA)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
(f = 60 Hz, t = 1.0 min.)
(V
I-O
= 500 V)
(V
I-O
= 0, f = 1.0 MHz)
CTR
V
CE(sat)
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
20
50
100
—
—
—
—
—
2500
10
11
—
—
—
—
—
4.0
4.0
3.0
3.0
—
—
0.2
—
—
—
0.4
—
—
—
—
—
—
—
%
V
µs
µs
µs
µs
Vac(rms)
Ω
pF
(V
CE
= 5.0 V, T
A
= 25°C)
(V
CE
= 5.0 V, T
A
= 100°C)
(I
C
= 100 µA)
(I
E
= 100 µA)
(f = 1.0 MHz, V
CE
= 0)
I
CEO
BV
CEO
BV
ECO
C
CE
—
—
30
7.0
—
1.0
1.0
100
10
7.0
50
—
—
—
—
nA
µA
V
V
pF
(I
F
= 1.0 mA)
(V
R
= 6.0 V)
V
F
I
R
C
—
—
—
1.07
0.001
18
1.3
100
—
V
µA
pF
Symbol
Min
Typ**
Max
Unit
Collector-Emitter Saturation Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Input-Output Isolation Voltage
(1,2,3)
Isolation Resistance
(2)
Isolation Capacitance
(2)
** Typical values at T
A
= 25°C unless otherwise noted.
1. Input-Output Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2,500 V
AC(RMS)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(RMS)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
1.8
MOC216-M
10
MOC217-M
Fig. 2 Output Curent vs. Input Current
Fig. 1 LED Forward Voltage vs. Forward Current
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
1.4
T
A
= 55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
0.01
0.1
1
10
100
Fig. 3 Output Current vs. Ambient Temperature
10
I
F
- LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25
o
C
0.1
-80
-60
-40
-20
0
20
40
60
o
80
100
120
T
A
- AMBIENT TEMPERATURE ( C)
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
10000
4.0
Fig. 6 Normalized t
on
vs. R
BE
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
Normalized to:
t
on
at R
BE
= Open
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
3.5
1000
V
CE
=10V
3.0
2.5
NORMALIZED t
on
0
20
40
60
80
100
100
2.0
10
1.5
1.0
1
0.5
0.1
0.0
0.01
0.1
1
10
100
© 2002 Fairchild Semiconductor Corporation
Page 4 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
1.6
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
Normalized to:
t
off
at R
BE
= Open
MOC216-M
Fig. 7 Normalized t
off
vs. R
BE
1.0
0.9
I
F
= 10mA
MOC217-M
Fig. 8 CTR vs. R
BE
(Saturated)
1.4
0.8
0.7
1.2
NORMALIZED CTR
NORMALIZED t
off
1.0
0.6
0.5
I
F
= 20mA
I
F
= 5mA
0.8
0.6
0.4
0.3
0.4
0.2
0.2
0.1
0.0
0.01
0.1
1
10
100
0.0
10
V
CE
= 0.3V, TA = 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
R
BE
- BASE RESISTANCE (MΩ)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 9 CTR vs. R
BE
(Unsaturated)
1.0
0.9
0.8
I
F
= 10mA
0.7
NORMALIZED CTR
0.6
0.5
I
F
= 20mA
I
F
= 5mA
0.4
0.3
0.2
V
CE
= 5V, TA = 25°C
Normalized to:
CTR at R
BE
= Open
10
100
1000
0.1
0.0
R
BE
- BASE RESISTANCE (kΩ)
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
4/10/03
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