PHOTO SCR OPTOCOUPLERS
DESCRIPTION
The 4N39 and 4N40 have a gallium-arsenide infrared
emitting diode optically coupled with a light activated sil-
icon controlled rectifier in a dual in-line package.
4N39
4N40
FEATURES
•
•
•
•
10 A, T
2
L compatible, solid state relay
25 W logic indicator lamp driver
400 V symmetrical transistor coupler
Underwriters Laboratory (UL) recognized
File #E90700
6
1
6
SCHEMATIC
1
ANODE 1
6 GATE
APPLICATIONS
•
•
•
•
•
Low power logic circuits
6
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
CATHODE 2
5 ANODE
1
N/C 3
4 CATHODE
Parameter
TOTAL DEVICE
*Storage Temperature
*Operating Temperature
*Lead Solder Temperature
*Total Device Power Dissipation (-55°C to 50 °C)
Derate above 50°C
EMITTER
*Continuous Forward Current
*Reverse Voltage
*Forward Current - Peak (300 µs, 2% Duty Cycle)
*LED Power Dissipation (-55°C to 50 °C)
Derate above 50°C
DETECTOR
*Off-State
And Reverse Voltage
*Peak Reverse Gate Voltage
*Direct On-State Current
*Surge On-State Current (100 µs)
*Peak Gate Current
*Detector Power Dissipation (-55°C to 50°C)
Derate above 50°C
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
Value
-55 to +150
-55 to +100
260 for 10 sec
450
9.0
60
6
1.0
100
2.0
200
400
6
300
10
10
400
8.0
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mA
A
mA
mW
mW/°C
4N39
4N40
P
D
All
2001 Fairchild Semiconductor Corporation
DS300381
2/27/01
1 OF 8
www.fairchildsemi.com
PHOTO SCR OPTOCOUPLERS
4N39
4N40
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Peak Off-State Voltage
Peak Reverse Voltage
On-State Voltage
Off-State Current
Reverse Current
Holding Current
R
GK
= 10 kΩ, T
A
=100 °C
T
A
=100 °C
I
T
= 300 mA
V
DM
= 200 V, T
A
= 100 °C,
I
F
= 0 mA, R
GK
= 10 kΩ
V
R
= 200 V, T
A
=100 °C, I
F
= 0 mA
V
Fx
= 50V, R
GK
= 27 k
Ω
V
DM
V
RM
V
T
I
DM
I
R
I
H
4N39
4N40
4N39
4N40
All
4N39
4N40
4N39
4N40
All
200
400
200
400
1.3
50
150
50
150
1.0
V
V
V
µA
µA
mA
I
F
= 10 mA
V
R
= 3 V
V
F
= 0 V, f = 1.0 MHz
V
F
I
R
C
J
All
All
All
50
1.1
1.5
10
V
µA
pF
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
TRANSFER CHARACTERISTICS
Characteristics
*Input Current to Trigger
*Turn-On Time
Package Capacitance
(input to output)
Coupled dv/dt, input to output
(figure 13)
(T
A
= 25°C Unless otherwise specified.)
Symbol
I
FT
t
on
C
I-O
dV/dt
Device
4N39
4N40
ALL
ALL
ALL
500
Min
Typ**
Max
30
14
50
2
Units
mA
µA
pF
V/µS
Test Conditions
V
AK
= 50 V, R
GK
= 10 kΩ
V
AK
= 100 V, R
GK
= 27 kΩ
V
AK
= 50 V, I
F
= 30 mA
R
GK
= 10 kΩ, RL = 200
Ω
f = 1 MHz
Input to Output Voltage = 0
ISOLATION CHARACTERISTICS
Characteristic
*Input-Output
Isolation Voltage
*Isolation Resistance
Isolation Capacitance
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25°C
Test Conditions
( I
I-0
≤
1 µA, Vrms, t = 1 min.)
(V
I-O
= 500 VDC)
(V
I-O
=
∅,
f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.8
Typ**
Max
Units
Vac(rms)
!
pf
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2/27/01
DS300381
PHOTO SCR OPTOCOUPLERS
4N39
Figure 1. Input Current To Trigger vs. Anode-Cathode Voltage
12
I
FT
- NORMALIZED INPUT CURRENT TO TRIGGER
50
I
FT
- NORMALIZED INPUT CURRENT TO TRIGGER
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25˚C
4N40
Figure 2. Input Current To Trigger vs. Temperature
10
8
6
4
2
R
GK
= 300Ω
10
5
R
GK
= 300Ω
1K
1K
1
.5
10K
27K
56K
1
.8
.6
.4
10K
27K
56K
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25˚C
.2
.1
-60
.1
1
5
10
50 100
200
400
V
AK
- ANODE TO CATHODE VOLTAGE (VOLTS)
-40
-20
0
20
40
60
80
100
120
T
A
- AMBIENT TEMPERATURE (˚C)
Figure 3. Input Current To Trigger Distribution vs. Temperature
10
I
FT
- NORMALIZED INPUT CURRENT TO TRIGGER
8
6
I
FT
- NORMALIZED INPUT CURRENT TO TRIGGER
4
100
Figure 4. Input Current To Trigger vs. Pluse Width
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25˚C
R
GK
= 300Ω
40
20
10
8
6
4
2
2
1K
NORMALIZED TO
V
AK
= 50V
90 TH PERCENTILE
R
GK
= 10K
T
A
= 25˚C
1
.8
.6
.4
10 TH PERCENTILE
10K
1
.8
.6
.4
.2
.1
27K
56K
.2
1
2
4
6 8 10
20
40 60 100 200
400
1000
PULSE WIDTH (MICRO SECONDS)
.1
-40
-20
0
20
40
60
80
100
Figure 6. Input Characteristics I
F
vs. V
F
T
A
- AMBIENT TEMPERATURE (˚C)
1000
Figure 5. Turn-On Time vs. Input Current
24
t
on
- TURN ON TIME (MICROSECONDS)
22
20
18
16
14
12
10
8
6
4
2
10
20
30
40
50
60
70
80
90
100
56K
10K
R
GK
= 1K
V
AK
= 50V
t
on
= t
d
+ I
r
t
r
≈
1µS
I
F
- FORWARD CURRENT (MILLIAMPERES)
100
10
1
0
.01
.001
0.5
1.0
2.0
3.0
V
AK
- FORWARD VOLTAGE (VOLTS)
I
F
- INPUT CURRENT (MILLIAMPERES)
DS300381
2/27/01
3 OF 8
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PHOTO SCR OPTOCOUPLERS
4N39
TRANSIENT THERMAL IMPEDANCE (
˚C PER WATT)
4N40
Figure 7. Holding Current vs. Temperature
10,000
I
M
- HOLDING CURRENT (MICROAMPERES)
I
FT
- NORMALIZED INPUT CURRENT TO TRIGGER
5,000
R
GK
= 300Ω
Figure 8. Maximum Transient Thermal Impedance
1000
600
400
200
100
60
40
20
10
6
4
2
1
.0001
.0004 .001 .002 .004 .01
.0002
.02 .04
1
2
4
10
20
40
100
JUNCTION TO LEAD
NOTE: (1) LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION
OF THE SCR ANODE LEAD
(2) AMBIENT TEMPERATURE MEASURED AT A POINT
1/2" FROM THE DEVICE
JUNCTION TO AMBIENT
1000
500
1K
10K
100
50
27K
56K
V
AK
= 50V
10
-40
-20
0
20
40
60
80
100
TIME (SECONDS)
T
A
- AMBIENT TEMPERATURE (
˚C)
Figure 9. Off-State Forward Current vs. Temperature
10,000
5000
I
D
- NORMALIZED FORWARD CURRENT (OFF STATE)
NORMALIZED TO
V
AK
+50V
T
A
+25˚C
Figure 10. On-State Current vs. Maximum Allowable Temperature
100
90
80
70
60
50
40
30
20
10
AMBIENT TEMP
HALF-SINE
WAVE AVGERAGE
AMBIENT TEMP
DC CURRENT
ANODE LEAD TEMP
1/2 SINE WAVE AVERAGE
ANODE LEAD TEMP
DC CURRENT
1000
500
100
50
10
5
400V
50V
MAXIMUM ALLOWABLE TEMPERATURE (˚C)
0.2
0.4
0.6
08
10
ON-STATE CURRENT (AMPERES)
1
0
25
50
75
100
T
A
- AMBIENT TEMPERATURE (
˚C)
Figure 12. On-State Characteristics
2
1
.8
.6
I
T
- ON-STATE CURRENT (AMPERES)
.4
Figure 11. dv/dt vs. Temperature
dV/dI - CRITICAL RATE OF RISE APPLIED FORWARD VOLTAGE ( Volt/µ sec)
1000
500
100
R
GK
= 300Ω
.2
50
1K
.01
.08
.06
JUNCTION TEMPERATURE = 25
˚C
10
5
.04
JUNCTION TEMPERATURE = 100
˚C
.-2
.01
1.0
.5
10K
27K
56K
INCREASES TO FORWARD
BREAKOVER VOLTAGE
0
10
20
30
40
V
T
- ON-STATE VOLTAGE (VOLTS)
25
50
75
100
T
A
- AMBIENT TEMPERATURE (
˚C)
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2/27/01
DS300381
PHOTO SCR OPTOCOUPLERS
4N39
+100 V AC
Vp = 800 Volts
tp = .010 Seconds
f = 25 Hertz
T
A
= 25
°
C
DUT
+
Vp
Vp
.63 Vp
-
tp
dV / dt
EXPONENTIAL
RAMP GEN.
10 KΩ
OSCILLOSCOPE
H
100
Ω
4N40
Fig. 13 Coupled dv/dt - Test Circuit
TYPICAL APPLICATIONS
10A, T
2
L COMPATIBLE, SOLID
STATE RELAY
Use of the 4N40 for high sensi-
tivity, 5300 V isolation capability,
provides this highly reliable solid
state relay design. This design is
compatible with 74, 74S and 74H
series T
2
L logic systems inputs
and 220V AC loads up to 10A.
47
Ω
470
Ω
+5V
4N40
"COIL"
SC1460
56K
0.1
µ
F
"CONTACT"
220 V AC
100
Ω
LOAD
IN5060 (4)
47
Ω
INDICATER
LAMP
25W, LOGIC INDICATOR LAMP DRIVER
The high surge capability and non-reactive input
characteristics of the 4N40 allow it to directly couple,
without buffers, T
2
L and DTL logic to indicator alarm
devices, without danger of introducing noise and
logic glitches.
470
Ω
+5V
4N40
LOGIC
INPUT
56K
100
Ω
220 V AC
0.1
µ
F
400V SYMMETRICAL TRANSISTOR COUPLER
Use of the high voltage PNP portion of the 4N40 provides a 400V transistor
capable of conducting positive and negative signals with current transfer
ratios of over 1%. This function is useful in remote instrumentation, high volt-
age power supplies and test equipment. Care should be taken not to exceed
the 40mW power dissipation rating when used at high voltages.
4N40
INPUT
OUTPUT
DS300381
2/27/01
5 OF 8
www.fairchildsemi.com
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