Data Sheet No. PD 60069-H
(NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
IRSF3031
FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
•
•
•
•
Controlled slew rate reduces EMI
Over temperature protection
Over current protection
Active drain-to-source clamp
ESD protection
Lead compatible with standard Power MOSFET
Low operating input current
Monolithic construction
Dual set/reset threshold input
Product Summary
V ds(clamp)
Rds(on)
Ids(sd)
Tj(sd)
E AS
Applications
50 V
200 m
Ω
4A
165
o
C
200 mJ
Description
The IRSF3031 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD and
over-voltage protections and dual set/reset input threshold .
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 4A (typical) or the junction
temperature exceeds 165
o
C (typical) and keeps it off until the
input is driven below the Reset Threshold voltage.
The drain to source voltage is actively clamped at 55V prior to
the avalanche of the Power MOSFET, thus improving its perfor-
mance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which
makes the IRSF3031 compatible with most existing designs
based on standard power MOSFETs.
•
Solenoid Driver
•
DC Motor Driver
•
Programmable Logic Controller
Packages
3 Lead
SOT-223
3 Lead
TO220AB
Drain
DRAIN
Block Diagram
Bias & Ref
Input
INPUT
3.5V
+
1V
+
-
S
R
Q
Q
-
+
-
Vref
-
+
Ground
Isolation
Tj
Source
SOURCE
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1
IRSF3031
Absolute Maximum Ratings
Symbol Parameter
Vds, max Continuous drain to source voltage
Vin, max
Ids
Pd
EAS
Vesd1
Vesd2
T Jop
T Stg
TL
Continuous input voltage
Continuous drain current
Power dissipation
Unclamped single pulse inductive energy➁
Electrostatic discharge voltage
(Human Body Model)
Electrostatic discharge voltage
(Machine Model)
Operating junction temperature range
Storage temperature range
Lead temperature (soldering, 10 seconds)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
=
25
o
C unless otherwise specified.)
Min.
—
-0.3
—
—
—
—
—
—
-55
-55
—
Max.
50
10
self limited
Units Test Conditions
V
A
W
W
mJ
V
100pF. 1.5kΩ
200pF, 0Ω
o
30
3.0
200
4000
1000
150
150
300
Tc
Tc
≤
≤
25
o
C, TO220
25
o
C, SOT223
C
Static Electrical Characteristics
(T
c
= 25
o
C unless otherwise specified.)
Symbol Parameter
V
ds,clamp
R
ds(on)
I
dss
V
set
V
reset
I
i,on
I
i,off
V
in, clamp
V
sd
Drain to source clamp voltage
Drain to source on resistance
Drain to source leakage current
Input threshold voltage
Input protection reset threshold voltage
Input supply current (normal operation)
Input supply current (protection mode)
Input clamp voltage
Body-drain diode forward drop➂
Min.
50
—
—
2.5
0.5
—
—
9
—
Typ.
56
155
—
3.2
1.0
100
120
10
1.5
Max. Units Test Conditions
65
200
250
4.0
1.5
300
400
—
—
V
mΩ
µ
A
V
V
µ
A
µ
A
V
V
I
ds
= 2A
V
in
= 5V, I
ds
= 2A
V
ds
= 40V, V
in
= 0V
V
ds
= 5V, I
ds
> 10mA
V
ds
= 5V, I
ds
< 10
µ
A
V
in
= 5V
V
in
= 5V
I
in
= 1mA
I
ds
= -2A, R
in
= 1kΩ
Thermal Characteristics
Symbol Parameter
R
thjc
R
thja
R
thjc
R
thja
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Thermal resistance, junction-to-case
Thermal resistance, junction-to-PCB
➀
Min.
—
—
—
—
Typ.
—
—
—
—
Max. Units Test Conditions
4
60
40
60
o
C/W
C/W
TO-220AB
SOT-223
o
N
OTES
:
x
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
y
E
AS
is tested with a constant current source of 6A applied for 700µS with V
in
= 0V and starting T
j
= 25oC.
z
Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is
forward biased.
2
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IRSF3031
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 10Ω, R
in
= 100Ω. Specifications measured at T
C
= 25
o
C unless otherwise
specified.)
Symbol Parameter
t don
tr
t doff
tr
SR
SR
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Output positive slew rate
Output negative slew rate
Min.
—
—
—
—
-6
-6
Typ.
—
—
—
—
—
—
Max. Units Test Conditions
30
30
30
30
6
6
µ
s
V
in
= 2V to 5V, 50% to 90%
V
in
= 2V to 5V, 90% to 10%
V
in
= 5V to 2V, 50% to 10%
V
in
= 5V to 2V, 10% to 90%
V
in
= 2V to 5V, +dVds/dt
V
in
= 5V to 2V, -dVds/dt
V/
µ
s
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.
Symbol Parameter
I
ds(sd)
T
j(sd)
V
protect
t
Iresp
I
peak
t
reset
t
Tresp
Current limit
Over temperature shutdown threshold
Min. input voltage for over-temp function
Over current response time
Peak short circuit current
Protection reset time
Over-temperature response time
Min.
1.8
155
—
—
—
—
—
Typ.
4
165
3
TBD
TBD
TBD
TBD
Max. Units Test Conditions
6
—
—
—
—
—
—
o
A
C
V
µ
s
A
Vin = 5V
Vin = 5V, Ids = 2A
µs
Lead Assignments
2 (D)
(2) D
1
In
2
D
3
S
1 2 3
In D S
3 Lead - SOT223
IRSF3031L
3 Lead - TO220
IRSF3031
Part Number
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3
IRSF3031
Case Outline - SOT-223
(TO-261AA) 01-0022 05
4
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IRSF3031
Tape & Reel - SOT223
01-0028 05 / 01-0008 02
Case Outline 3 Lead - TO220
NOTES:
2X
IRGB 01-3026 01
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++44 (0) 20 8645 8000
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086
IR HONG KONG:
Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 4/11/2000
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