IC,BUS TRANSCEIVER,SINGLE,8-BIT,CMOS, RAD HARD,DIP,20PIN,CERAMIC
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | DIP, DIP20,.3 |
| Reach Compliance Code | unknown |
| 控制类型 | COMMON CONTROL |
| 计数方向 | BIDIRECTIONAL |
| JESD-30 代码 | R-XDIP-T20 |
| JESD-609代码 | e0 |
| 最大I（ol） | 0.024 A |
| 位数 | 8 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 包装方法 | RAIL |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 9 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 总剂量 | 100k Rad(Si) V |
| Base Number Matches | 1 |
| 54ACTQ245DMQB-R | 54ACQ245LMQB | 54ACTQ245FMQB-R | 54ACTQ245LMQB-R | 54ACQ245DMQB | |
|---|---|---|---|---|---|
| 描述 | IC,BUS TRANSCEIVER,SINGLE,8-BIT,CMOS, RAD HARD,DIP,20PIN,CERAMIC | AC SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20 | IC,BUS TRANSCEIVER,SINGLE,8-BIT,CMOS, RAD HARD,FP,20PIN,CERAMIC | IC,BUS TRANSCEIVER,SINGLE,8-BIT,CMOS, RAD HARD,LLCC,20PIN,CERAMIC | AC SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP20,.3 | QCCN, LCC20,.35SQ | DFP, FL20,.3 | QCCN, LCC20,.35SQ | DIP, DIP20,.3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown |
| 控制类型 | COMMON CONTROL | COMMON CONTROL | COMMON CONTROL | COMMON CONTROL | COMMON CONTROL |
| 计数方向 | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL |
| JESD-30 代码 | R-XDIP-T20 | S-CQCC-N20 | R-XDFP-F20 | S-XQCC-N20 | R-GDIP-T20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A |
| 位数 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | QCCN | DFP | QCCN | DIP |
| 封装等效代码 | DIP20,.3 | LCC20,.35SQ | FL20,.3 | LCC20,.35SQ | DIP20,.3 |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | FLATPACK | CHIP CARRIER | IN-LINE |
| 包装方法 | RAIL | TUBE | RAIL | RAIL | TUBE |
| 电源 | 5 V | 3.3/5 V | 5 V | 5 V | 3.3/5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B | MIL-STD-883 Class B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | MIL-STD-883 Class B |
| 标称供电电压 (Vsup) | 5 V | 3 V | 5 V | 5 V | 3 V |
| 表面贴装 | NO | YES | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | NO LEAD | FLAT | NO LEAD | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | QUAD | DUAL | QUAD | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| Prop。Delay @ Nom-Sup | 9 ns | - | 9 ns | 9 ns | 11.5 ns |
| 总剂量 | 100k Rad(Si) V | - | 100k Rad(Si) V | 100k Rad(Si) V | - |
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