HS-4424RH, HS-4424BRH
Data Sheet
June 1999
File Number
4739.1
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers
The Radiation Hardened HS-4424RH and HS-4424BRH are
non-inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4424RH and 7.5V for the HS-4424BRH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99560. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to DESC SMD # 5962-99560
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(SI)
- Latch-Up Immune
- Low Dose Rate Immune
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Min)
• Matched Rise and Fall Times (C
L
= 4300pF). . . 75ns (Max)
• Low Voltage Lock-Out Feature
- HS-4424RH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 10.0V
- HS-4424BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 7.5V
• Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (Max)
• Consistent Delay Times with V
CC
Changes
• Low Power Consumption
- 40mW with Inputs High
- 20mW with Inputs Low
• Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Ordering Information
ORDERING NUMBER
5962F9956001VXC
5962F9956001QXC
HS9-4424RH/Proto
5962F9956002VXC
5962F9956002QXC
HS9-4424BRH/Proto
INTERNAL
MKT. NUMBER
HS9-4424RH-Q
HS9-4424RH-8
HS9-4424RH/Proto
HS9-4424BRH-Q
HS9-4424BRH-8
HS9-4424BRH/Proto
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Pinout
HS-4424RH, HS-4424BRH (FLATPACK CDFP4-F16)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
OUT A
OUT A
V
CC
V
CC
OUT B
OUT B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 1999
HS-4424RH, HS-4424BRH
Die Characteristics
DIE DIMENSIONS:
4890µm x 3370µm (193 mils x 133 mils)
Thickness: 483µm
±
25.4µm (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ
±
1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ
±
2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
125
Metallization Mask Layout
HS-4424RH, HS-4424BRH
GND (5)
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
OUT A (15)
OUT A (14)
V
CC
(12)
V
CC
(13)
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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