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SIT1618AE-23-33E-25.000000G

产品描述osc mems 25.000mhz smd
产品类别无源元件    振荡器   
文件大小509KB,共18页
制造商SiTime
标准
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SIT1618AE-23-33E-25.000000G概述

osc mems 25.000mhz smd

SIT1618AE-23-33E-25.000000G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称SiTime
Reach Compliance Codecompli
Factory Lead Time8 weeks
JESD-609代码e4
振荡器类型LVCMOS
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)

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SiT1618
Standard Frequency, High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
33 standard frequencies between 7.3728 MHz and 48 MHz
Supply voltage of 1.8V or 2.5V to 3.3V
Operating temperature from -40°C to 125°C. For -55°C option, refer
to
SiT8920
and
SiT8921
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 3.4 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Industrial, medical, automotive, avionics and other high
temperature applications
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Electrical Specifications
Table 1. Electrical Characteristics
[1, 2]
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
MHz
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
33 standard frequencies between
7.3728 MHz and 48 MHz
-20
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
OE Disable Current
Standby Current
I_od
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
Output High Voltage
VOH
90%
1.8
2.5
2.8
3.0
3.3
3.8
3.6
3.4
2.6
1.4
0.6
1.0
1.3
1.0
+20
+25
+30
+50
+105
+125
1.98
2.75
3.08
3.3
3.63
3.63
4.5
4.2
4
4.1
3.8
8.5
5.5
3.5
55
2.0
2.5
3
Frequency Stability and Aging
Frequency Stability
F_stab
ppm
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = Low, output in high Z state.
Vdd = 1.8V, OE = Low, output in high Z state.
Vdd = 2.8V to 3.3V, ST = Low, Output is Weakly Pulled Down
Vdd = 2.5V, ST = Low, Output is Weakly Pulled Down
Vdd = 1.8V, ST = Low, Output is Weakly Pulled Down
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Extended Industrial
Automotive
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Operating Temperature Range
Supply Voltage and Current Consumption
Supply Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
SiTime Corporation
Rev. 1.0
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised January 4, 2014
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