CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM8030LANGP
CURRENT 75 Ampere
FEATURE
* Small flat package. (D2PAK)
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
0.420(10.67)
0.380(9.69)
0.245(6.22)
MIN.
K
D2PAK
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0.055(1.40)
0.047(1.19)
1
3
2
0.575(14.60)
0.360(9.14)
* N-Channel Enhancement
0.625(15.88)
CONSTRUCTION
0.320(8.13)
0.110(2.79)
0.090(2.29)
0.100(2.54)
0.095(2.41)
0.037(0.940)
0.027(0.686)
0.025(0.64)
0.018(0.46)
0.110(2.79)
0.080(2.03)
CIRCUIT
(1)
G
D
(3)
1 Gate
2 Source
3 Drain ( Heat Sink )
S
(2)
Dimensions in inches and (millimeters)
D2PAK
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM8030LANGP
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
30
V
V
±
20
75
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
225
75
-55 to 150
-55 to 150
W
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
62.5
°C/W
2006-01
ELECTRICAL CHARACTERISTIC ( CHM8030LANGP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 30 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
30
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=37.5A
V
DS
=10V, I
D
= 26A
1
5.5
40
3
6.5
V
m
Ω
S
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=15V, I
D
=40A
V
GS
=5V
V
DD
= 15V
I
D
= 60A , V
GS
= 10 V
R
GEN
= 6
Ω
35
11
16
25
21
58
13
45
nC
50
45
100
33
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
75
1.3
A
V
Drain-Source Diode Forward Voltage I
S
= 37.5A , V
GS
= 0 V
(Note 2)
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