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ASITPV591

产品描述NPN SILICON RF POWER TRANSISTOR
文件大小23KB,共2页
制造商ASI [ASI Semiconductor, Inc]
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ASITPV591概述

NPN SILICON RF POWER TRANSISTOR

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TPV591
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TPV591
is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
300 mA
45 V
5.3 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
33.0 C/W
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
h
FE
C
ob
I
C
= 10 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
T
C
= 25
O
C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22
45
3.5
UNITS
V
V
V
I
C
= 100 mA
f = 1.0 MHz
f = 860 MHz
20
200
3.0
---
pF
dB
Pref = 0.5 W
P
g
SOUND CARRIER
= -7.0 dB
VISION CARRIER
= -8.0 dB
13
CHROMA
= -16 dB
IMD
Pref = 0.5 W
f = 860 MHz
V
CE
= 20 V
I
C
= 150 mA
SOUND CARRIER
=-7.0dB
VISION CARRIER
= -8.0 dB
CHROMA
= -16 dB
-58
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

ASITPV591相似产品对比

ASITPV591 TPV591
描述 NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR

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