trans prebias pnp 200mw sot23-3
参数名称 | 属性值 |
Datasheets | |
DDTB - LO-R1 - C | |
Product Photos | |
SOT23 | |
Standard Package | 3,000 |
Category | Discrete Semiconductor Products |
Family | Transistors (BJT) - Single, Pre-Biased |
系列 Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 470 |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transiti | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mou |
封装 / 箱体 Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Other Names | DDTB142JCDITR |
DDTB142JC-7 | DDTB142TC-7 | DDTB122TC-7-F | |
---|---|---|---|
描述 | trans prebias pnp 200mw sot23-3 | trans prebias pnp 200mw sot23-3 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved