BC490, BC490A
High Current Transistors
PNP Silicon
Features
•
Pb−Free Packages are Available*
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MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
1
2
3
mW
mW/°C
Value
−80
−80
−4.0
−1.0
Unit
Vdc
Vdc
Vdc
Adc
2
BASE
COLLECTOR
1
3
EMITTER
MARKING
DIAGRAM
BC
490A
AYWW
G
G
TO−92
CASE 29
STYLE 17
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC490A = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC490
BC490G
BC490A
BC490AG
BC490AZL1
BC490AZL1G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
2000 / Ammo Box
2000 / Ammo Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 2
Publication Order Number:
BC490/D
BC490, BC490A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −60 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −1.0 Adc, V
CE
= −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −50 mAdc, V
CE
= −2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2%.
f
T
C
ob
C
ib
−
−
−
150
9.0
110
−
−
−
MHz
pF
pF
V
CE(sat)
−
−
V
BE(sat)
−
−
−0.9
−1.0
−1.2
−
−0.25
−0.5
−0.5
−
Vdc
h
FE
BC490
BC490A
40
60
100
15
−
−
140
−
−
400
250
−
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
−80
−80
−4.0
−
−
−
−
−
−
−
−
−100
Vdc
Vdc
Vdc
nAdc
Symbol
Min
Typ
Max
Unit
TURN−ON TIME
5.0
ms
+10 V
0
t
r
= 3.0 ns
−1.0 V
100
V
in
5.0
mF
R
B
100
V
CC
+40 V
R
L
OUTPUT
V
in
TURN−OFF TIME
+V
BB
100
R
B
5.0
mF
5.0
ms
t
r
= 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
100
V
CC
+40 V
R
L
OUTPUT
*C
S
< 6.0 pF
*C
S
< 6.0 pF
Figure 1. Switching Time Test Circuits
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2
BC490, BC490A
BANDWIDTH PRODUCT (MHz)
200
V
CE
= −2.0 V
T
J
= 25°C
100
70
50
f T, CURRENT−GAIN
C, CAPACITANCE (pF)
100
70
50
30
20
C
ibo
T
J
= 25°C
10
30
7.0
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100
I
C
, COLLECTOR CURRENT (mA)
−200
5.0
−0.1
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
V
R
, REVERSE VOLTAGE (VOLTS)
C
obo
−50 −100
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
200
t, TIME (ns)
100
70
50
30
20
t
s
t
d
@ V
BE(off)
= −0.5 V
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
f
t
r
−500
10
−5.0 −7.0 −10 −20 −30
−50 −70 −100
−200 −300
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
Z
qJA(t)
= r(t)
•
R
qJA
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−469)
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
10 k
20 k
50 k
100
2.0
5.0
10
Figure 5. Thermal Response
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3
BC490, BC490A
−1.0 k
−700
IC, COLLECTOR CURRENT (mA)
−500
−200
T
A
= 25°C
T
C
= 25°C
−100
−70
−50
−30
−20
−10
−1.0
V, VOLTAGE (VOLTS)
−300
1.0 s
1.0 ms
100
ms
1.0
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
BC490
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.5
1.0
2.0
5.0
10
50
100
20
I
C
, COLLECTOR CURRENT (mA)
200
500
Figure 6. Active Region, Safe Operating Area
Figure 7. “On” Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
0.6
0.4
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
−0.8
−1.2
−1.6
−2.0
R
qVB
for V
BE
0.2
0
0.05
−2.4
−2.8
0.5
0.1
0.2
1.0 2.0
10
0.5
5.0
I
C
, COLLECTOR CURRENT (mA)
20
50
1.0
2.0
10
100
5.0
20
50
I
C
, COLLECTOR CURRENT (mA)
200
500
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
400
T
J
= 125°C
hFE , DC CURRENT GAIN
200
25°C
−55°C
100
80
60
40
−0.5
V
CE
= −1.0 V
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
I
C
, COLLECTOR CURRENT (mA)
−50
−70
−100
−200
−300
−500
Figure 10. DC Current Gain
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4
BC490, BC490A
−1.0
T
J
= 25°C
−0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
−0.4
V
BE(on)
@ V
CE
= −1.0 V
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
−1.0
T
J
= 25°C
−0.8
−0.6
I
C
= −10 mA
−50
mA
−100 mA
−250 mA
−500 mA
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.5 −1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
−0.2
0
−0.05 −0.1
−0.2
−0.5 −1.0 −2.0
−5.0
I
B
, BASE CURRENT (mA)
−10
−20
−50
Figure 11. “On” Voltages
Figure 12. Collector Saturation Region
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−0.8
−1.2
−1.6
R
qVB
for V
BE
−2.0
−2.4
−2.8
−0.5
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
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