BCP6825TA: 产品描述transistor npn 1A 20v sot-223; 产品类别半导体分立半导体; 文件大小43KB，共1页; 制造商Diodes; 官网地址http://www.diodes.com/; 标准

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BCP6825TA概述

transistor npn 1A 20v sot-223

BCP6825TA规格参数

参数名称	属性值
Datasheets
BCP68
Product Photos
SOT223-3L
Catalog Drawings
SOT-223 T
Standard Package	1
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
系列 Packaging	Cut Tape (CT)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	20V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 500mA, 1V
Power - Max	2W
Frequency - Transiti	100MHz
Mounting Type	Surface Mou
封装 / 箱体 Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Other Names	BCP6825CT

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAIL

BCP69

BCP68

BCP68 25

BCP68

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

MIN.

100

0.5

0.6

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

CONDITIONS.

=10

= 30mA *

=10

=25V

=25V, T

amb

=150°C

=5V

=1A, I

=100mA*

=5A, V

=10V*

=1A, V

=1V*

=5mA, V

=10V*

=500mA, V

=1V*

=500mA, V

=1V*

MHz

=100mA, V

=5V,

f=100MHz

Emitter Cut-Off Current I

EBO

CE(sat)

BE(on)

1.0

400

Static Forward Current h

BCP68

Transfer Ratio

BCP68-25 160

Transition Frequency

250

100

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

For typical characteristics graphs see FMMT449 datasheet.

3 - 19

BCP6825TA相似产品对比

	BCP6825TA	BCP6825TC
描述	transistor npn 1A 20v sot-223	transistor npn med pwr sot223
Standard Package	1	4,000
Category	Discrete Semiconductor Products	Discrete Semiconductor Products
Family	Transistors (BJT) - Single	Transistors (BJT) - Single
系列 Packaging	Cut Tape (CT)	Tape & Reel (TR)
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1A	1A
Voltage - Collector Emitter Breakdown (Max)	20V	20V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 500mA, 1V	160 @ 500mA, 1V
Power - Max	2W	2W
Frequency - Transiti	100MHz	100MHz
Mounting Type	Surface Mou	Surface Mou
封装 / 箱体 Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223

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