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RN2105CT(TPL3)

产品描述tran pnp cst3 -20v -50a
产品类别分立半导体    晶体管   
文件大小225KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN2105CT(TPL3)概述

tran pnp cst3 -20v -50a

RN2105CT(TPL3)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknow
最大集电极电流 (IC)0.05 A
最小直流电流增益 (hFE)120
元件数量1
极性/信道类型PNP
最大功率耗散 (Abs)0.05 W
表面贴装YES
晶体管元件材料SILICON

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RN2101CT ~ RN2106CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2101CT, RN2102CT, RN2103CT
RN2104CT, RN2105CT, RN2106CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN1101CT to RN1106CT
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
0.25±0.03
0.35±0.02
0.15±0.03
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2101CT
RN2102CT
R2
RN2103CT
RN2104CT
E
RN2105CT
RN2106CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1.BASE
0.38 +0.02
-0.03
B
R1
CST3
2.EMITTER
3.COLLECOTR
JEDEC
JEITA
TOSHIBA
0.65±0.02
0.05±0.03
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101CT to 2106CT
RN2101CT to 2106CT
RN2101CT to 2104CT
RN2105CT, 2106CT
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−20
−20
−10
−5
−50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.05±0.03
2004-10
1
2014-03-01

RN2105CT(TPL3)相似产品对比

RN2105CT(TPL3) RN2102CT(TPL3) RN2106CT(TPL3) RN2103CT(TPL3) RN2101CT(TPL3) RN2104CT(TPL3)
描述 tran pnp cst3 -20v -50a tran pnp cst3 -20v -50a tran pnp cst3 -20v -50a tran pnp cst3 -20v -50a tran pnp cst3 -20v -50a tran pnp cst3 -20v -50a
Reach Compliance Code unknow unknow unknow unknow unknow unknow
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
最小直流电流增益 (hFE) 120 60 120 100 30 120
元件数量 1 1 1 1 1 1
极性/信道类型 PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.05 W 0.05 W 0.05 W 0.05 W 0.05 W 0.05 W
表面贴装 YES YES YES YES YES YES
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) -

 
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