PD - 9.1374B
IRFI3205
HEXFET
®
Power MOSFET
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.008Ω
I
D
= 64A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
64
45
390
63
0.42
± 20
480
59
6.3
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
°C/W
8/25/97
IRFI3205
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Min.
55
–––
–––
2.0
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
4.5
7.5
4000
1300
480
12
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.008
Ω
V
GS
= 10V, I
D
= 34A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 59A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
170
I
D
= 59A
32
nC V
DS
= 44V
74
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 59A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 0.39Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
64
––– –––
showing the
A
G
integral reverse
––– ––– 390
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
––– 110 170
ns
T
J
= 25°C, I
F
= 59A
––– 450 680
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
t=60s, ƒ=60Hz
Uses IRF3205 data and test conditions
V
DD
= 25V, starting T
J
= 25°C, L = 190µH
R
G
= 25Ω, I
AS
= 59A. (See Figure 12)
I
SD
≤
59A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
IRFI3205
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
1000
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
100
100
4.5V
10
0.1
1
4.5 V
2 0µ s PU LSE W ID TH
T
J
T
C
= 2 5°C
10
A
10
0.1
1
20 µs P UL SE W IDTH
T
T
J
= 17 5°C
C
10
100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 2 5 °C
T
J
= 1 7 5 ° C
100
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= 9 8A
I
D
, D r ain- to-S ourc e C urre nt (A )
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 2 5 V
2 0 µ s P U L SE W ID TH
8
9
10
A
0.0
-60
-40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFI3205
8000
7000
6000
5000
4000
3000
2000
1000
0
1
10
100
C , C a p a c ita n c e (p F )
C
i ss
C
os s
V
G S
, G a te -to -S o u rc e V o lta g e (V )
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1 MH z
C
gs
+ C
gd
, C
ds
SH O R TED
C
gd
C
ds
+ C
gd
20
I
D
= 5 9A
V
DS
= 44 V
V
DS
= 28 V
V
DS
= 11 V
16
12
8
C
rs s
4
A
0
0
30
60
90
FO R TES T C IR CU IT
SEE FIG U R E 13
120
150
180
A
V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total Gate Charge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R e v e rse D ra in C u rre n t (A )
O PER ATION IN TH IS AR EA LIM ITE D
BY R
D S(o n)
10µs
I
D
, D ra in C u rre n t (A )
100
1 00µs
100
T
J
= 1 75 °C
1m s
10
10m s
T
J
= 25 °C
10
0.6
1.0
1.4
1.8
2.2
V
G S
= 0 V
2.6
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le Pulse
10
100
3.0
A
V
S D
, S ource-to-Drain Voltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFI3205
70
V
DS
60
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
50
-
V
DD
40
30
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
10
0
25
50
75
100
125
150
175
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
Thermal Response
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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