PD - 96110A
IRF7343QPBF
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
HEXFET
®
Power MOSFET
D1
D1
D2
D2
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
N-Ch
V
DSS
55V
P-Ch
-55V
6
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.050Ω 0.105Ω
Description
These HEXFET
®
Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
± 20
5.0
-55 to + 150
-5.0
114
-3.4
P-Channel
-55
-3.4
-2.7
-27
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
R
θJA
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
62.5
Units
°C/W
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1
08/09/10
IRF7343QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
55
-55
1.0
-1.0
7.9
3.3
Typ. Max.
0.059
0.054
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
2.0
-2.0
25
-25
±100
24
36
26
38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
14
22
3.2 4.8
10
15
32
48
43
64
13
20
22
32
740
690
190
210
71
86
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 4.7A
V
GS
= 4.5V, I
D
= 3.8A
V
GS
= -10V, I
D
= -3.4A
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 10V, I
D
= 4.5A
V
DS
= -10V, I
D
= -3.1A
V
DS
= 55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
V
GS
= ±20V
N-Channel
I
D
= 4.5A, V
DS
= 44V, V
GS
= 10V
P-Channel
I
D
= -3.1A, V
DS
= -44V, V
GS
= -10V
N-Channel
V
DD
= 28V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 28Ω
P-Channel
V
DD
= -28V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 28Ω
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
0.70
-0.80
60
54
120
85
Max. Units
Conditions
2.0
-2.0
A
38
-27
1.2
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
V
-1.2
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
90
N-Channel
ns
80
T
J
= 25°C, I
F
=2.0A, di/dt = 100A/µs
170 nC
P-Channel
T
J
= 25°C, I
F
= -2.0A, di/dt = 100A/µs
130
Repetitive rating; pulse width limited by
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 22 )
N-Channel I
SD
≤
4.7A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
P-Channel I
SD
≤
-3.4A, di/dt
≤
-150A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel
Starting T
J
= 25°C, L = 6.5mH R
G
= 25Ω, I
AS
= 4.7A.
P-Channel
Starting T
J
= 25°C, L = 20mH R
G
= 25Ω, I
AS
= -3.4A.
2
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N-Channel
100
IRF7343QPbF
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
4.5V
6.0V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
10
3.0V
3.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
V DS = 25V
20µs PULSE WIDTH
3
4
5
6
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
V
GS
, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7343QPbF
2.5
N-Channel
2.0
R
DS (on)
, Drain-to-Source On Resistance
(Ω)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.7A
0.120
0.100
1.5
0.080
1.0
VGS = 4.5V
0.5
0.060
VGS = 10V
0.040
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
0
10
20
30
40
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.12
200
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
0.10
120
0.08
80
0.06
I
D
= 4.7A
40
0.04
0
2
4
6
8
10
A
0
25
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
4
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N-Channel
1200
20
IRF7343QPbF
I
D
=
4.5A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
1000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
16
C, Capacitance (pF)
800
Ciss
12
600
8
400
Coss
200
4
Crss
0
1
10
100
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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