SEP8506
GaAs Infrared Emitting Diode
FEATURES
•
Side-emitting plastic package
•
50¡ (nominal) beam angle
•
935 nm wavelength
•
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
INFRA-20.TIF
DESCRIPTION
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
DIM_071.ds4
40
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8506
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Storage Temperature Range
Operating Temperature Range
Soldering Temperature (5 sec)
50 mA
100 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
41
SEP8506
GaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60
-45
-30
-15
0
+15 +30 +45 +60
Fig. 2
gra_030.ds4
Radiant Intensity vs
Forward Current
10.0
5.0
2.0
1.0
0.5
0.2
0.1
10
20
30
40 50
gra_028.ds4
Normalized radiant intensity
Relative intensity
T
A
= 25 °C
100
Angular displacement - degrees
Fig. 3
Forward Voltage vs
Forward Current
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
0
20
40
60
Forward current - mA
Fig. 4
Forward Voltage vs
Temperature
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
-40
-15
10
35
60
85
I
F
= 20 mA
gra_003.ds4
gra_207.ds4
Forward current - mA
Fig. 5
Spectral Bandwidth
gra_005.ds4
Forward voltage - V
Forward voltage - V
Temperature - °C
Fig. 6
Coupling Characteristics
with SDP8406
10
6
4
2
1.0
0.6
0.4
0.2
0.1
0.01
gra_031.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870
Light current - mA
Relative intensity
I
F
= 20 mA
V
CE
= 5V
T
A
= 25 °C
0.02
0.05
0.1
0.2
0.5
1.0
890
910
930
950
970
990
1010
Wavelength - nm
Lens-to-lens separation - inches
42
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8506
GaAs Infrared Emitting Diode
Fig. 7
Relative Power Output vs
Free Air Temperature
10
5.0
2.0
1.0
0.5
gra_130.ds4
Relative power output
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
0.2
0.1
-50
-25
0
+25
+50
+75
+100
T
A
- Free-air temperature - (°C)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
43
模拟与混合信号
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