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SIR-563ST3FM

产品描述emitter IR 940nm 5mm
产品类别光电子/LED   
文件大小61KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准  
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SIR-563ST3FM概述

emitter IR 940nm 5mm

SIR-563ST3FM规格参数

参数名称属性值
Datasheets
SIR-563ST3F
Product Photos
SIR-56ST3FF, SIR-563ST3FF, SIR-568ST3FF
Standard Package1,000
CategoryOptoelectronics
FamilyInfrared, UV, Visible Emitters
系列
Packaging
Bulk
Current - DC Forward (If) (Max)100mA
Radiant Intensity (Ie) Min @ If9mW/sr @ 50mA
Wavelength940nm
Voltage - Forward (Vf) (Typ)1.34V
Viewing Angle30°
OrientatiTop View
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
T 1 3/4
Dynamic CatalogSIR-xxST3F
Other Names511-1365SIR-563ST3FSIR-563ST3F-NDSIR-563ST3FFSIR-563ST3FPSIR-563ST3FQSIR563ST3FM

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SIR-563ST3F
Sensors
Infrared light emitting diode, top view type
SIR-563ST3F
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Dimensions
(Unit : mm)
φ5.0±0.2
Notes:
1.
Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
Features
1) High efficiency, high output P
O
=11.0mW
(I
F
=50mA).
2) Wide radiation angle
θ1/2=15deg.
3) Emission spectrum well suited to silicon detectors.
(λP=940nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
4−0.6
2
1
(2.5)
φ6±0.3
2.5±1
Min.24
2−
0.5
Max.1
1
8.7±0.3
1 Anode
2 Cathode
Absolute maximum ratings
(Ta = 25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width=0.1msec, duty ratio 1%
Symbol
I
F
V
R
P
D
I
FP
Topr
Tstg
Limits
100
5.0
160
0.5
−25
to
+85
−40
to
+85
Unit
mA
V
mW
A
°C
°C
Rev.A
1/3

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