256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Features
DDR SDRAM RDIMM
MT9VDDF3272 – 256MB
MT9VDDF6472 – 512MB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 184-pin, registered dual in-line memory module
(RDIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 72) and 512MB (64 Meg x 72)
• Supports ECC error detection and correction
• V
DD
= V
DD
Q = +2.5V
(-40B: V
DD
= V
DD
Q = +2.6V)
• V
DDSPD
= +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/received
with data—that is, source-synchronous data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 2:
R/C A (-335, -262, -26A -265)
PCB height: 28.58mm (1.125in)
Options
–
Commercial (0°C
≤
T
A
≤
+70°C)
–
Industrial (–40°C
≤
T
A
≤
+85°C)
• Package
–
200-pin DIMM (standard)
–
200-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency
2
–
5ns (200 MHz), 400 MT/s, CL = 3
–
6ns (166 MHz), 333 MT/s, CL = 2.5
–
7.5ns (133 MHz), 266 MT/s, CL = 2
–
7.5ns (133 MHz), 266 MT/s, CL = 2
–
7.5ns (133 MHz), 266 MT/s, CL = 2.5
•
Operating temperature
1
Marking
None
I
G
Y
-40B
-335
-262
-26A
-265
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode will
add one clock cycle to CL.
184-Pin RDIMM (MO-206) Figures
Figure 1:
R/C G (-40B, -335, -265)
PCB height: 28.58mm (1.125in)
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Features
Table 1:
Speed
Grade
-40B
-335
-262
-26A
-265
Key Timing Parameters
Industry
Nomenclature
PC3200
PC2700
PC2100
PC2100
PC2100
Notes:
Data Rate (MT/s)
CL = 3
400
–
–
–
–
CL = 2.5
333
333
266
266
266
CL = 2
266
266
266
266
200
t
RCD
(ns)
15
18
15
20
20
RP
(ns)
15
18
15
20
20
t
RC
(ns)
55
60
60
65
65
t
Notes
1
1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 2:
Parameter
Addressing
256MB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (32 Meg x 8)
1K (A0–A9)
1 (S0#)
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
1 (S0#)
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Table 3:
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
1
256Mb DDR SDRAM
Module
Density
256MB
256MB
256MB
256MB
256MB
256MB
256MB
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5ns/400 MT/s
5ns/400 MT/s
6ns/333 MT/s
6ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
3-3-3
3-3-3
2.5-3-3
2.5-3-3
2-2-2
2-3-3
2.5-3-3
Part Number
2
MT9VDDF3272G-40B__
MT9VDDF3272Y-40B__
MT9VDDF3272G-335__
MT9VDDF3272Y-335__
MT9VDDF3272G-262__
MT9VDDF3272G-26A__
MT9VDDF3272G-265__
Notes:
Configuration
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT9VDDF3272Y-335G3.
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Pin Assignments and Descriptions
Table 4:
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V64M8,
1
512Mb DDR SDRAM
Part Number
2
MT9VDDF6472G-40B__
MT9VDDF6472Y-40B__
MT9VDDF6472G-335__
MT9VDDF6472Y-335__
MT9VDDF6472G-265__
MT9VDDF6472Y-265__
Notes:
Module
Density
512MB
512MB
512MB
512MB
512MB
512MB
Configuration
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5ns/400 MT/s
5ns/400 MT/s
6ns/333 MT/s
6ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
3-3-3
3-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT9VDDF6472Y-335F1.
Pin Assignments and Descriptions
Table 5:
Pin Assignments
184-Pin DDR RDIMM Front
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V
REF
DQ0
V
SS
DQ1
DQS0
DQ2
V
DD
DQ3
NC
RESET#
V
SS
DQ8
DQ9
DQS1
V
DDQ
NC
NC
V
SS
DQ10
DQ11
CKE0
V
DD
Q
DQ16
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
DQ17
DQS2
V
SS
A9
DQ18
A7
V
DDQ
DQ19
A5
DQ24
V
SS
DQ25
DQS3
A4
V
DD
DQ26
DQ27
A2
V
SS
A1
CB0
CB1
V
DD
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
DQS8
A0
CB2
V
SS
CB3
BA1
DQ32
V
DD
Q
DQ33
DQS4
DQ34
V
SS
BA0
DQ35
DQ40
V
DDQ
WE#
DQ41
CAS#
V
SS
DQS5
DQ42
DQ43
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
V
DD
NC
DQ48
DQ49
V
SS
NC
NC
V
DD
Q
DQS6
DQ50
DQ51
V
SS
NC
DQ56
DQ57
V
DD
DQS7
DQ58
DQ59
V
SS
NC
SDA
SCL
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
V
SS
DQ4
DQ5
V
DD
Q
DM0
DQ6
DQ7
V
SS
NC
NC
NC
V
DD
Q
DQ12
DQ13
DM1
V
DD
DQ14
DQ15
NC
V
DD
Q
NC
DQ20
A12
184-Pin DDR RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
V
SS
DQ21
A11
DM2
V
DD
DQ22
A8
DQ23
V
SS
A6
DQ28
DQ29
V
DD
Q
DM3
A3
DQ30
V
SS
DQ31
CB4
CB5
V
DD
Q
CK0
CK0#
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
V
SS
DM8
A10
CB6
V
DD
Q
CB7
V
SS
DQ36
DQ37
V
DD
DM4
DQ38
DQ39
V
SS
DQ44
RAS#
DQ45
V
DD
Q
S0#
NC
DM5
V
SS
DQ46
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
DQ47
NC
V
DD
Q
DQ52
DQ53
NC
V
DD
DM6
DQ54
DQ55
V
DD
Q
NC
DQ60
DQ61
V
SS
DM7
DQ62
DQ63
V
DD
Q
SA0
SA1
SA2
V
DDSPD
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Pin Assignments and Descriptions
Table 6:
Pin Descriptions
Symbol
A0–A12
Type
Input
Description
Address inputs:
Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0 and BA1)
or all device banks (A10 HIGH). The address inputs also provide the op-code
during a MODE REGISTER SET command. BA0 and BA1 define which mode
register (mode register or extended mode register) is loaded during the LOAD
MODE REGISTER command.
Bank address:
BA0 and BA1 define the device bank to which an ACTIVE,
READ, WRITE, or PRECHARGE command is being applied.
Clock:
CK and CK# are differential clock inputs. All control, command, and
address input signals are sampled on the crossing of the positive edge of CK
and the negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
Clock enable:
CKE enables (registered HIGH) and CKE disables (registered
LOW) the internal clock, input buffers, and output drivers.
Input data mask:
DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although the DM pins are input-
only, the DM loading is designed to match that of the DQ and DQS pins.
Command inputs:
RAS#, CAS#, and WE# (along with S#) define the command
being entered.
Reset:
Asynchronously forces all registered outputs LOW when RESET# is LOW.
This signal can be used during power-up to ensure that CKE is LOW and DQ are
High-Z.
Chip selects:
S# enables (registered LOW) and disables (registered HIGH) the
command decoder.
Presence-detect address inputs:
These pins are used to configure the SPD
EEPROM address range on the I
2
C bus.
Serial clock for SPD EEPROM:
SCL is used to synchronize the presence-detect
data transfer to and from the module.
Check bits.
Data input/output:
Data bus.
Data strobe:
Output with read data. Edge-aligned with read data. Input with
write data. Center-aligned with write data. Used to capture data.
Serial data:
SDA is a bidirectional pin used to transfer addresses and data into
and out of the presence-detect portion of the module.
Power supply:
+2.5V ±0.2V (-40B: +2.6V ±0.1V).
SPD EEPROM power supply:
+2.3V to +3.6V.
SSTL_2 reference voltage (V
DD
/2).
Ground.
No connect:
These pins are not connected on the module.
BA0, BA1
CK0, CK0#
Input
Input
CKE0
DM0–DM8
Input
Input
RAS#, CAS#, WE#
RESET#
Input
Input
S0#
SA0–SA2
SCL
CB0–CB7
DQ0–DQ63
DQS0–DQS8
SDA
V
DD
/V
DD
Q
V
DDSPD
V
REF
V
SS
NC
Input
Input
Input
I/O
I/O
I/O
I/O
Supply
Supply
Supply
Supply
–
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Functional Block Diagrams
Functional Block Diagrams
Figure 3:
Functional Block Diagram R/C G (-40B, -335, -265)
RS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS8
DM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM CS# DQS
DQ
DQ
DQ
U5
DQ
DQ
DQ
DQ
DQ
RS0#: DDR SDRAM
RBA0, RBA1: DDR SDRAM
RA0–RA12: DDR SDRAM
RRAS#: DDR SDRAM
RCAS#: DDR SDRAM
RCKE0: DDR SDRAM
RWE#: DDR SDRAM
RESET#
V
DDSPD
V
DD
Q
CK0
CK0#
DM CS# DQS
DQ
DQ
DQ
DQ
U4
DQ
DQ
DQ
DQ
DM CS# DQS
DQ
DQ
DQ
U3
DQ
DQ
DQ
DQ
DQ
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM CS# DQS
DQ
DQ
DQ
DQ
U12
DQ
DQ
DQ
DQ
DM CS# DQS
DQ
DQ
DQ
DQ
U2
DQ
DQ
DQ
DQ
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DM CS# DQS
DQ
DQ
DQ
DQ
U11
DQ
DQ
DQ
DQ
DM CS# DQS
DQ
DQ
DQ
DQ
U1
DQ
DQ
DQ
DQ
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DM CS# DQS
DQ
DQ
DQ
DQ
U10
DQ
DQ
DQ
DQ
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM CS# DQS
DQ
DQ
DQ
U9
DQ
DQ
DQ
DQ
DQ
U8
PLL
U13
SCL
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
Register x 2
U6, U7
S0#
BA0, BA1
A0–A12
RAS#
CAS#
CKE0
WE#
SPD EEPROM
WP
A0 A1 A2
V
SS
SA0 SA1 SA2
SDA
R
e
g
i
s
t
e
r
s
SPD/EEPROM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
V
DD
V
REF
V
SS
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
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