Embedded USB Mass Storage Drive (e230)
Features
Embedded USB Mass Storage Drive
(e230)
MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT
MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT
MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT
MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT
MTEDCBE002SAJ-1M2/1M2IT, MTEDCBE004SAJ-1N2/1N2IT
MTEDCBE008SAJ-1N2/1N2IT, MTEDCBE016SAJ-1N2/1N2IT
MTEDCAE002SAJ-1M2/1M2IT, MTEDCAE004SAJ-1N2/1N2IT
MTEDCAE008SAJ-1N2/1N2IT, MTEDCAE016SAJ-1N2/1N2IT
Features
• Micron
®
NAND Flash
• Interface: Universal Serial Bus (USB) Specification,
Revision 2.0
• USB support
– USB Specification, Revisions 2.0, 1.1
– USB Mass Storage Class Specification, Revision
1.0
• Performance
– Sequential READ
1
: 30 MB/s
– Sequential WRITE
1
: 22 MB/s (2GB and 4GB); 28
MB/s (8GB and16GB)
• Reliability: >1 million device hours mean time be-
tween failure (MTBF)
• Endurance: useful operating life of at least 5 years
under the following conditions:
– 8760 power-on hours per year
– Active 100% of power-on hours
– Typical operating conditions
2
: 2GB module: 16
GB/day; 4GB module: 32 GB/day; 8GB module:
64 GB/day; 16GB module: 128 GB/day
• Static and dynamic wear-leveling
• 15-bit error correction code (ECC)
• Reliability reporting
• Capacity (unformatted)
3
: 2GB, 4GB, 8GB, or 16GB
• Form factor
– Standard (36.9mm x 26.6mm x 9.6mm)
– Low profile (36.9mm x 26.6mm x 5.8mm)
• Voltage: 5V ±5% and 3.3V ±5%
• Operating temperature
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
Notes:
1. Typical transfer rate measured with
H2BENCH 3.6.
2. Assumes that 70% of total usable drive ca-
pacity contains static files.
3. 1GB = 1 billion bytes; formatted capacity is
less.
Warranty:
Contact your Micron sales representative
for further information regarding the product,
including product warranties.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Features
Part Numbering Information
Micron’s embedded USB drives are available in different configurations and densities. Visit
www.micron.com
for a
list of valid part numbers.
Table 1: Part Number Example
Part Number Category
Operat-
ing
Temper- Produc-
ature
tion
Range Status
IT
ES
Micron
Tech- Product
nology Family
MT
ED
Drive
Inter-
face
C
Drive
Form
Factor
AE
Drive
Density
002
NAND
Flash
Type
S
Product
Family
AJ
Sector
Size
-1
NAND
Compo-
nent
M
Revi-
sion
1
Table 2: Part Number Information Scheme
Part Number
Category
Micron Technology
Product Family
Drive Interface
Drive Form Factor
Micron Technology
ED = Embedded drive
C = USB 2.0
AE = Embedded USB: 5V standard profile (36.9mm x 26.6mm x 9.6mm)
BE = Embedded USB: 5V low profile (36.9mm x 26.6mm x 5.8mm)
AR = Embedded USB: 3V standard profile (36.9mm x 26.6mm x 9.6mm)
BR = Embedded USB: 3V low profile (36.9mm x 26.6mm x 5.8mm)
Drive Density
002 = 2GB
004 = 4GB
008 = 8GB
016 = 16GB
NAND Flash Type
Product Family
Sector Size
NAND Component
Revision
S = SLC
AJ = Option J
1 = 512-byte
M = 8Gb; x8; 3.3V
N = 16Gb; x8; 3.3V
1 = First generation
2 = Second generation
3 = Third generation
Operating Tempera-
ture Range
Production Status
Blank = Commercial (0°C to 70°C)
IT = Industrial (40°C to 85°C)
Blank = Production
ES = Engineering sample
MS = Mechanical sample
Category Details
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
General Description
Micron embedded universal serial bus (USB) mass storage drives provide 2GB, 4GB,
8GB, or 16GB of USB 2.0-compatible memory storage in a small form factor. The em-
bedded USB drive is an ideal solution for applications that require low cost and high re-
liability. Typical applications include PC caching and boot drives for embedded com-
puting, server, and networking systems.
High performance, reliability, and easy implementation make Micron embedded USBs
an ideal storage solution. To consistently deliver the best possible performance, the em-
bedded USB uses only SLC NAND Flash, and all densities use two x8 NAND channels to
the controller. In addition to being fast, SLC NAND Flash offers solid reliability, coupled
with ECC and wear leveling. The USB system interface is widely available in many sys-
tem designs and is easy to implement, enabling rapid time to market.
The embedded USB consists of two TSOP-packaged Micron NAND Flash components,
a USB controller, and a 10-pin USB connector on a PCB. Different densities are available
depending on the number of die in each package and the density of each NAND Flash
die. The drive operates at 5V ±5% or 3.3V ±5%. It uses industry-standard 10-pin connec-
tors and supports USB Specification, Revision 2.0. It is also backward compatible with
Revision 1.1 and can be used with operating systems that support USB Mass Storage
Class Specification, Revision 1.0.
Figure 1: Functional Block Diagram
USB protocol
USB
connector
NAND data bus
Channel 1
Micron
NAND Flash
USB
controller
NAND command
Channel 1
NAND data bus
Channel 2
Micron
NAND Flash
Table 3: Nominal Package Dimensions, Density, and Weight
Value
Height
Width
Length
Density
Unit weight
9.6 (standard)
5.8 (low profile)
26.6
36.9
2, 4, 8, 16
4.5
Unit
mm
mm
mm
GB
g
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
Figure 2: Pin Assignments: 2 x 5 Connector
9
Key
7
GND
5
USB
data
(+)
NC
6
3
USB
data
(–)
NC
4
1
Vcc
(+5V)
1
Vcc
(+5V)
3
USB
data
(–)
NC
4
5
USB
data
(+)
NC
6
7
GND
9
Key
NC
10
NC
8
NC
2
NC
2
NC
8
NC
10
Top view (through PCB)
Bottom view
Note:
1. Diagram not to scale.
Table 4: Signal/Pin Descriptions
Symbol
USB data (+), USB data (–)
Type
I/O
Function
Data inputs/outputs:
The bidirection-
al I/Os transfer address, data, and in-
struction information. Data is output
only during READ operations; at other
times the I/Os are inputs.
V
CC
power supply pin.
V
SS
ground connection
No connect:
NC pins are not internally
connected. These pins can be driven or
left floating.
This pin is keyed.
V
CC
V
SS
NC
Supply
Supply
–
Key
–
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Error Management
Error Management
The embedded USB incorporates advanced technology for defect and error manage-
ment. It uses various combinations of hardware-based error correction algorithms and
firmware-based wear-leveling algorithms.
Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is de-
fined as data that is reported as successfully programmed to the drive, but when it is
read out of the drive, the data differs from what was programmed. See the Uncorrecta-
ble Bit Error Rate Table.
The mean time between failures (MTBF) can be predicted based on component reliabil-
ity data obtained by following the methods referenced in the Telecordia SR-332 reliabili-
ty prediction procedures for electronic equipment.
Table 5: System Reliability
Density
2–16GB
MTFB (Operating Hours)
>1 million device hours
Table 6: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate (BER)
1
<1 bit error in 10
15
bits
Note:
1. BER is measured with a WRITE-to-READ ratio of 1:1.
Operation
READ
Wear-Leveling Algorithm
The controller adds a built-in RAM register unit to record the erase count of each block.
Accordingly, the controller can decide the frequency of wear leveling and choose the
proper blocks to swap. This technique successfully averages the erase count of the data
blocks. Also, an enhanced wear leveling algorithm now includes most static blocks in
the recycling pool. Increasing the number of blocks makes the wear-leveling algorithm
more robust, and in turn extends product life.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
