Embedded USB Mass Storage Drive (e230)
Features
Embedded USB Mass Storage Drive (e230)
MTFDCAE002SAJ
MTFDCAE004SAJ
MTFDCAE008SAJ
MTFDCAE016SAJ
Features
•
Micron
®
NAND Flash
•
Interface: Universal Serial Bus (USB) Specification,
Revision 2.0
•
USB support
–
USB Specification, Revisions 2.0, 1.1
–
USB Mass Storage Class Specification, Revision 1.0
•
Performance
–
Sequential READ
1
: 30 MB/s
–
Sequential WRITE
1
: 22 MB/s (2GB and 4GB); 28
MB/s (8GB and16GB)
•
Reliability: >1 million device hours mean time be-
tween failure (MTBF)
•
Endurance: useful operating life of at least 5 years
under the following conditions:
–
8760 power-on hours per year
–
Active 100% of power-on hours
–
Typical operating conditions
2
: 2GB module: 16
GB/day; 4GB module: 32 GB/day; 8GB module:
64 GB/day; 16GB module: 128 GB/day
•
Static and dynamic wear-leveling
•
15-bit error correction code (ECC)
•
Password protection
•
Reliability reporting
•
Capacity (unformatted)
3
: 2GB, 4GB, 8GB, or 16GB
•
Form factor
–
Standard (36.9mm x 26.6mm x 9.6mm)
•
Voltage: 5V ±5%
•
Operating temperature
–
Commercial (0°C to +70°C)
–
Industrial (–40°C to +85°C)
Notes:
1. Typical transfer rate measured with
H2BENCH 3.6.
2. Assumes that 70% of total usable drive ca-
pacity contains static files.
3. 1GB = 1 billion bytes; formatted capacity is
less.
PDF: 09005aef84053f80
eusb.pdf - Rev. A 4/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Features
Part Numbering Information
Micron’s RealSSD™ embedded USB drives are available in different configurations and densities. Visit
www.mi-
cron.com
for a list of valid part numbers.
Figure 1: Part Number Chart
MT FD
Micron Technology
Product Family
FD = Flash drive
C
AE 002
S
AJ
-1
M
1
IT
ES
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
Drive Interface
C = USB 2.0
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Drive Form Factor
AE = Embedded USB: 36.9mm x 26.6mm x 9.6mm
Revision
1 = 1st generation
2 = 2nd generation
3 = 3rd generation
Drive Density
002 = 2GB
004 = 4GB
008 = 8GB
016 = 16GB
NAND Component
M = 8Gb; x8; 3.3V
N = 16Gb; x8; 3.3V
NAND Flash Type
S = SLC
Sector Size
1 = 512-byte
Product Family
AJ = Option J
PDF: 09005aef84053f80
eusb.pdf - Rev. A 4/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
General Description
Micron RealSSD™ embedded universal serial bus (USB) mass storage drives provide
2GB, 4GB, 8GB, or 16GB of USB 2.0-compatible memory storage in a small form factor.
The embedded USB drive is an ideal solution for applications that require low cost and
high reliability. Typical applications include PC caching and boot drives for embedded
computing, server, and networking systems.
High performance, reliability, and easy implementation make Micron RealSSD embed-
ded USBs an ideal storage solution. To consistently deliver the best possible perform-
ance, the embedded USB uses only SLC NAND Flash, and all densities use two x8
NAND channels to the controller. In addition to being fast, SLC NAND Flash offers solid
reliability, coupled with ECC and wear leveling. The USB system interface is widely avail-
able in many system designs and is easy to implement, enabling rapid time to market.
The embedded USB consists of two TSOP-packaged Micron NAND Flash components,
a USB controller, and a 10-pin USB connector on a PCB. Different densities are availa-
ble depending on the number of die in each package and the density of each NAND
Flash die. The drive operates at 5V ±5%. It uses industry-standard 10-pin connectors
and supports USB Specification, Revision 2.0. It is also backward compatible with Revi-
sion 1.1 and can be used with operating systems that support USB Mass Storage Class
Specification, Revision 1.0.
Figure 2: Functional Block Diagram
USB protocol
USB
connector
NAND data bus
Channel 1
Micron
NAND Flash
USB
controller
NAND command
Channel 1
NAND data bus
Channel 2
Micron
NAND Flash
Table 1: Nominal Package Dimensions, Density, and Weight
Value
Height
Width
Length
Density
Unit weight
9.6
26.6
36.9
1, 2, 4, 8
4.5
Unit
mm
mm
mm
GB
g
PDF: 09005aef84053f80
eusb.pdf - Rev. A 4/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
Figure 3: Pin Assignments: 2 x 5 Connector
9
Key
7
GND
5
USB
data
(+)
NC
6
3
USB
data
(–)
NC
4
1
Vcc
(+5V)
1
Vcc
(+5V)
3
USB
data
(–)
NC
4
5
USB
data
(+)
NC
6
7
GND
9
Key
NC
10
NC
8
NC
2
NC
2
NC
8
NC
10
Top view (through PCB)
Bottom view
Note:
1. Diagram not to scale.
Table 2: Signal/Pin Descriptions
Symbol
USB data (+), USB data (–)
Type
I/O
Function
Data inputs/outputs:
The bidirection-
al I/Os transfer address, data, and in-
struction information. Data is output
only during READ operations; at other
times the I/Os are inputs.
V
CC
power supply pin.
V
SS
ground connection
No connect:
NC pins are not internally
connected. These pins can be driven or
left floating.
This pin is keyed.
V
CC
V
SS
NC
Supply
Supply
–
Key
–
PDF: 09005aef84053f80
eusb.pdf - Rev. A 4/10 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Error Management
Error Management
The RealSSD™ embedded USB incorporates advanced technology for defect and error
management. It uses various combinations of hardware-based error correction algo-
rithms and firmware-based wear-leveling algorithms.
Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is de-
fined as data that is reported as successfully programmed to the drive, but when it is
read out of the drive, the data differs from what was programmed. See the Uncorrecta-
ble Bit Error Rate Table.
The mean time between failures (MTBF) can be predicted based on component reliabil-
ity data obtained by following the methods referenced in the Telecordia SR-332 reliabil-
ity prediction procedures for electronic equipment.
Table 3: System Reliability
Density
2–16GB
MTFB (Operating Hours)
>1 million device hours
Table 4: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate (BER)
1
<1 bit error in 10
15
bits
Note:
1. BER is measured with a WRITE-to-READ ratio of 1:1.
Operation
READ
PDF: 09005aef84053f80
eusb.pdf - Rev. A 4/10 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
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