HLMP-CExx
T-1 ¾ (5mm) Extra Bright Cyan LEDs
Data Sheet
Description
The high intensity Cyan LEDs are based on the most
efficient and cost effective InGaN material technol-
ogy. The 505nm typical dominant wavelength is most
suitable for traffic signal application. These LED lamps
are untinted, non-diffused, T-1¾ packages incorporating
second generation optics which produce well-defined
spatial radiation patterns at specific viewing cone angles.
These lamps are made with an advanced optical grade
epoxy, offering superior temperature and moisture resis-
tance in outdoor sign and signals applications.
Features
x
Viewing Angle: 15°, 23° and 30°
x
Well defined spatial radiation pattern
x
High brightness material
x
Superior resistance to moisture
x
Package options:
– Stand-off and Non Stand-off Leads
x
Untinted and non diffused
Applications
x
Traffic signals
Package Dimensions
A: Non stand-off
1.0 ±0.20
0.039 ±0.008
Dimension A
Ø
0.50 ±0.20 sq. typ.
.020 ±.008
2.540 ±0.2
0.100 ±0.008
Cathode
1.00
min
.039
5.80 ±0.20
0.228 ±0.008
5.00 ±0.20
0.197 ±0.008
Note 1
25.40
min
0.901
cathode
flat
B: Stand-off
1.0 ±0.20
0.039 ±0.008
Dimension A
1.30 ±0.15
0.051 ±0.006
0.50 ±0.20 sq. typ.
.020 ±.008
2.540 ±0.2
0.100 ±0.008
Cathode
Dimension d
25.40
min
0.901
1.00
min
.039
cathode
flat
Ø
5.80 ±0.20
0.228 ±0.008
5.00 ±0.20
0.197 ±0.008
Note 1
Package
15°
23°
30°
Dimension A
8.70 ± 0.20 mm
8.65 ± 0.20 mm
8.65 ± 0.20 mm
Dimension d
13.00 ± 0.20 mm
12.25 ± 0.20 mm
12.05 ± 0.20 mm
Notes:
1. Measured above flange.
2. All dimensions in millimeters (inches).
CAUTION:
InGaN devices are Class 1C HBM ESD sensitive per JEDEC Standard. Please observe appropriate
precautions during handling and processing. Refer to Application Note AN-1142 for additional details.
Device Selection Guide
Part Number
HLMP-CE13-35CDD
HLMP-CE13-35QDD
HLMP-CE22-Z2CDD
HLMP-CE22-Z2QDD
HLMP-CE34-Y1CDD
HLMP-CE34-Y1QDD
HLMP-CE14-35CDD
HLMP-CE14-35QDD
HLMP-CE25-Z2CDD
HLMP-CE25-Z2QDD
HLMP-CE35-Y1CDD
HLMP-CE35-Y1QDD
Luminous Intensity
Iv (mcd) at 20 mA Min.
27000
27000
12000
12000
9300
9300
27000
27000
12000
12000
9300
9300
Luminous Intensity
Iv (mcd) at 20 mA Max.
59000
59000
27000
27000
21000
21000
59000
59000
27000
27000
21000
21000
Stand-Off
No
No
No
No
No
No
Yes
Yes
Yes
Yes
Yes
Yes
Tolerance for each intensity limit is ± 15%.
Notes:
1. The luminous intensity is measured on the mechanical axis of the lamp package.
2. Tolerance for each intensity limit is ± 15%.
3. Please refer to AN 5352 for detail information on features of stand-off and non stand-off LEDs.
Part Numbering System
HLM P-C E x x – x x x xx
Packaging Option
DD: Ammopack
Color Bin Selection
C: Color bin 3 & 4
Q: Color bin 7 & 8
Maximum Intensity Bin
Refer to Device Selection Guide
Minimum Intensity Bin
Refer to Device Selection Guide
Viewing Angle and Lead Stands-offs
13: 15° without stand-off
14: 15° with stand-off
22: 23° without stand-off
25: 23° with stand-off
34: 30° without stand-off
35: 30° with stand-off
Note:
Please refer to AB 5337 for complete information about part numbering system.
2
Absolute Maximum Ratings
T
J
= 25°C
Parameter
DC Forward Current
[1]
Peak Forward Current
Power Dissipation
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Notes:
1. Derate linearly as shown in Figure 5.
2. Duty Factor 10%, frequency 1KHz.
Value
30
100
[2]
107
Unit
mA
mA
mW
Not recommended for reverse bias
-40 to +85
-40 to +85
°C
°C
Electrical / Optical Characteristics
T
A
= 25°C
Parameter
Forward Voltage
Dominant Wavelength
[1]
Peak Wavelength
Spectral Halfwidth
Thermal Resistance
Luminous Efficacy
[2]
Luminous Flux
Luminous Efficiency
[3]
Symbol
V
F
O
d
O
PEAK
'O
1/2
RT
J-PIN
K
V
M
V
K
e
Min.
2.8
Typ.
3.2
505
501
30
240
326
2.1
34
Max.
3.5
Units
V
nm
nm
Test Conditions
I
F
= 20 mA
I
F
= 20 mA
Peak of Wavelength of Spectral
Distribution at I
F
= 20 mA
Wavelength width at spectral distri-
bution ½ power point at I
F
= 20 mA
°C/W
lm/W
lm
lm/W
LED Junction-to-Cathode Lead
Emitted Luminous Power/Emitted
Radiant Power
I
F
= 20 mA
Emitted Luminous Flux/Electrical
Power
Notes:
1. The dominant wavelength is derived from the chromaticity Diagram and represents the color of the lamp. Tolerance for each color of dominant
wavelength is ± 0.5nm.
2. The radiant intensity, I
e
in watts per steradian, may be found from the equation I
e
= I
V
/η
V
where I
V
is the luminous intensity in candelas and
K
V
is
the luminous efficacy in lumens/watt.
3.
K
e =
M
V
/ I
F
x V
F
where
M
V
is the emitted luminous flux, I
F
is electrical forward current and V
F
is the forward voltage.
3
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
30
25
FORWARD CURRENT - mA
20
15
10
5
0
450
500
550
600
WAVELENGTH - nm
650
700
0
1
2
FORWARD VOLTAGE - V
3
4
Figure 1. Relative Intensity vs Wavelength
RELATIVE INTENSITY
Figure 2. Forward Current vs Forward Voltage
1.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
DC FORWARD CURRENT - mA
25
30
DOMINANT WAVELENGTH SHIFT - nm
16
14
12
10
8
6
4
2
0
-2
-4
0
5
10
15
20
FORWARD CURRENT - mA
25
30
Figure 3. Relative Intensity vs Forward Current
Figure 4. Relative Dominant Wavelength vs Forward Current
IDC MAX -MAX. ALLOWABLE DC CURRENT - mA
35
30
25
20
15
10
5
0
0
20
40
60
80
TA - AMBIENT TEMPERATURE - °C
100
NORMALIZED INTENSITY
1
0.8
0.6
0.4
0.2
0
-90
-60
-30
0
30
ANGULAR DISPLACEMENT - DEG
60
90
Figure 5. Maximum Forward Current vs Ambient Temperature
Figure 6. Representative Spatial Radiation Pattern – 15° Lamps
4
1
NORMALIZED INTENSITY
-60
-30
0
30
ANGULAR DISPLACEMENT - DEG
60
90
0.8
0.6
0.4
0.2
0
-90
1
0.8
0.6
0.4
0.2
0
-90
-60
-30
0
30
ANGULAR DISPLACEMENT - DEG
60
90
NORMALIZED INTENSITY
Figure 7. Representative Spatial Radiation Pattern – 23° Lamps
Figure 8. Representative Spatial Radiation Pattern – 30° Lamps
Relative Light Output vs Junction Temperature
10
RELATIVE LIGHT OUTPUT (NORMALIZED AT TJ = 25°C)
1
0.1
-40
-20
0
20
40
TJ - JUNCTION TEMPERATURE - °C
60
80
100
Intensity Bin Limit Table (1.3: 1 Iv Bin Ratio)
Intensity (mcd) at 20 mA
Bin
Y
Z
1
2
3
4
5
Cyan Color Bin Limits
Bin
3
4
7
8
Min
500
505
498
503
Max
505
510
503
508
Min
9300
12000
16000
21000
27000
35000
45000
Max
12000
16000
21000
27000
35000
45000
59000
Tolerance for each bin limit is ± 0.5nm.
Tolerance for each bin limit is ± 15%
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
