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IS61DDPB251236A-550B4LI

产品描述DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
产品类别存储    存储   
文件大小522KB,共31页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
标准
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IS61DDPB251236A-550B4LI概述

DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

IS61DDPB251236A-550B4LI规格参数

参数名称属性值
是否Rohs认证符合
Objectid1064516250
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN代码3A991.B.2.A
YTEOL6.7
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)550 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
长度15 mm
内存密度18874368 bit
内存集成电路类型DDR SRAM
内存宽度36
功能数量1
端子数量165
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
电源1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.38 A
最大压摆率1.1 mA
最大供电电压 (Vsup)1.89 V
最小供电电压 (Vsup)1.71 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度13 mm

文档预览

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IS61DDPB21M18A/A1/A2
IS61DDPB251236A/A1/A2
1Mx18, 512Kx36
18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
(2.5 Cycle Read Latency)
FEATURES
512Kx36 and 1Mx18 configuration available.
On-chip Delay-Locked Loop (DLL) for wide data
valid window.
Common I/O read and write ports.
Synchronous pipeline read with self-timed late write
operation.
Double Data Rate (DDR) interface for read and
write input ports.
2.5 cycle read latency.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control
registering at rising edges only.
Two echo clocks (CQ and CQ#) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5, 1.8V VDDQ, used
with 0.75, 0.9V VREF.
HSTL input and output interface.
Registered addresses, write and read controls, byte
writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package:
13mm x 15mm & 15mm x 17mm body size
165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
Data Valid Pin (QVLD).
ODT (On Die Termination) feature is supported
optionally on data input, K/K#, and BW
x
#.
The end of top mark (A/A1/A2) is to define options.
IS61DDPB251236A : Don’t care ODT function
and pin connection
IS61DDPB251236A1 : Option1
IS61DDPB251236A2 : Option2
Refer to more detail description at page 6 for each
ODT option.
ADVANCED INFORMATION
JULY 2012
DESCRIPTION
The 18Mb IS61DDPB251236A/A1/A2 and
IS61DDPB21M18A/A1/A2 are synchronous, high-
performance CMOS static random access memory (SRAM)
devices. These SRAMs have a common I/O bus. The rising
edge of K clock initiates the read/write operation, and all
internal operations are self-timed. Refer to the
Timing
Reference Diagram for Truth Table
for a description of the
basic operations of these DDR-IIP (Burst of 2) CIO SRAMs.
Read and write addresses are registered on alternating rising
edges of the K clock. Reads and writes are performed in
double data rate.
The following are registered internally on the rising edge of
the K clock:
Read/write address
Read enable
Write enable
Byte writes
Data-in for first burst addresses
Data-Out for second burst addresses
The following are registered on the rising edge of the K#
clock:
Byte writes
Data-in for second burst addresses
Data-Out for first burst addresses
Byte writes can change with the corresponding data-in to
enable or disable writes on a per-byte basis. An internal write
buffer enables the data-ins to be registered one cycle after
the write address. The first data-in burst is clocked one cycle
later than the write command signal, and the second burst is
timed to the following rising edge of the K# clock.
During the burst read operation, the data-outs from the first
bursts are updated from output registers of the third rising
edge of the K# clock (starting two and half cycles later after
read command). The data-outs from the second burst are
updated with the fourth rising edge of the K clock where read
command receives at the first rising edge of K.
The device is operated with a single +1.8V power supply and
is compatible with HSTL I/O interfaces.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
7/05/2012
1
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