Datasheet> 器件分类 > 分立半导体> 晶体管> IRHM7250DPBF

IRHM7250DPBF: 产品描述Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN; 产品类别分立半导体晶体管; 文件大小643KB，共8页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRHM7250DPBF概述

Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

IRHM7250DPBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-254AA
包装说明	FLANGE MOUNT, S-MSFM-P3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	RADIATION HARDENED
雪崩能效等级（Eas）	500 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	26 A
最大漏源导通电阻	0.11 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA
JESD-30 代码	S-MSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
功耗环境最大值	150 W
最大脉冲漏极电流 (IDM)	104 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	280 ns
最大开启时间（吨）	173 ns
Base Number Matches	1

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PD-90674G

IRHM7250

JANSR2N7269

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRHM7250

IRHM3250

IRHM4250

IRHM8250

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

0.10

0.155

26A

QPL Part Number

JANSR2N7269

JANSF2N7269

JANSG2N7269

JANSH2N7269

200V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard HEXFET TECHNOLOGY

TO-254AA

Description

IRHM7250 is part of the International Rectifier HiRel family

of products. IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has over a decade of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

@ V

= 12V, T

= 25°C

dv/dt

STG

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

104

150

1.2

± 20

500

5.0

-55 to + 150

@ V

= 12V, T

= 100°C Continuous Drain Current

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

2017-12-21

IRHM7250DPBF相似产品对比

	IRHM7250DPBF	IRHM7250	IRHM7250SEDPBF	IRHM7250SEUPBF	IRHM7250SED	IRHM7250SEU	IRHM7250D	IRHM7250U	IRHM7250UPBF	IRHM7250PBF
描述	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
是否无铅	不含铅	含铅	不含铅	不含铅	含铅	含铅	含铅	含铅	不含铅	不含铅
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	compliant	unknow	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	RADIATION HARDENED	RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
雪崩能效等级（Eas）	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
最大漏极电流 (ID)	26 A	26 A	26 A	26 A	26 A	26 A	26 A	26 A	26 A	26 A
最大漏源导通电阻	0.11 Ω	0.11 Ω	0.105 Ω	0.105 Ω	0.105 Ω	0.105 Ω	0.11 Ω	0.11 Ω	0.11 Ω	0.11 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-MSFM-P3	S-XSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-XSFM-P3
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	UNSPECIFIED	METAL	METAL	METAL	METAL	METAL	METAL	METAL	UNSPECIFIED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	260	NOT SPECIFIED	260	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	104 A	104 A	104 A	104 A	104 A	104 A	104 A	104 A	104 A	104 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	40	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否Rohs认证	符合	-	符合	符合	不符合	不符合	不符合	不符合	符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-	-	-	-
零件包装代码	TO-254AA	TO-254AA	-	-	-	-	TO-254AA	TO-254AA	TO-254AA	TO-254AA
针数	3	3	-	-	-	-	3	3	3	3
JEDEC-95代码	TO-254AA	TO-254AA	-	-	-	-	TO-254AA	TO-254AA	TO-254AA	TO-254AA
最高工作温度	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Base Number Matches	1	-	1	1	1	1	1	1	1	1

IRHM7250DPBF

IRHM7250DPBF概述

IRHM7250DPBF规格参数

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IRHM7250DPBF相似产品对比

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