MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D
2
PAK for Surface Mount
Features
http://onsemi.com
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•
Electrically the Same as TIP41 and T1P42 Series
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
Value
100
100
5.0
6.0
10
Unit
Vdc
Vdc
Vdc
Adc
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D
2
PAK
CASE 418B
STYLE 1
J4xCG
AYWW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
−
Continuous
−
Peak
Base Current
2.0
Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
65
0.52
W
W/_C
W
W/_C
mJ
_C
P
D
2.0
0.016
62.5
Unclamped Inductive Load Energy (Note 1)
Operating and Storage Junction
Temperature Range
E
T
J
, T
stg
−65
to +150
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJB41CG
MJB41CT4G
NJVMJB41CT4G
MJB42CG
MJB42CT4G
NJVMJB42CT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape &
Reel
800 / Tape &
Reel
50 Units / Rail
800 / Tape &
Reel
800 / Tape &
Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
1.92
62.5
50
_C/W
_C/W
_C/W
_C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
260
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
C
= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100
W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 4
1
Publication Order Number:
MJB41C/D
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
PD, POWER DISSIPATION (WATTS)
0
- 9.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
t, TIME (
μ
s)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
100
−
−
−
Max
−
Unit
Vdc
Collector−Emitter Sustaining Voltage (Note 3) (I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current (V
CE
= 60 Vdc, I
B
= 0)
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
DC Current Gain
Collector Cutoff Current (V
CE
= 100 Vdc, V
EB
= 0)
V
CEO(sus)
I
CEO
I
CES
I
EBO
h
FE
0.7
mAdc
mAdc
mAdc
−
100
50
ON CHARACTERISTICS
(Note 3)
(I
C
= 0.3 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
30
15
−
−
−
75
Collector−Emitter Saturation Voltage (I
C
= 6.0 Adc, I
B
= 600 mAdc)
Base−Emitter On Voltage (I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
V
CE(sat)
V
BE(on)
f
T
1.5
2.0
−
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product (I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Small−Signal Current Gain (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
3.0
20
MHz
−
h
fe
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
T
A
4.0
T
C
80
3.0
60
T
C
2.0
40
1.0
20
T
A
0
0
0
20
40
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
V
CC
+ 30 V
25
ms
+11 V
R
B
R
C
SCOPE
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.06
t
r
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
D
1
-4 V
t
d
@ V
BE(off)
≈
5.0 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
0.1
1.0
0.2
2.0
0.4 0.6
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 2. Switching Time Test Circuit
http://onsemi.com
2
Figure 3. Turn−On Time
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
D = 0.5
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
Figure 4. Thermal Response
10
0.5 ms
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
2.0
1.0
0.5
0.3
0.2
1.0 ms
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ T
C
= 25°C
(SINGLE PULSE)
CURVES APPLY BELOW RATED V
CEO
5.0 ms
0.1
5.0
40
10
20
60
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active−Region Safe Operating Area
5.0
3.0
2.0
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
t
f
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C
ib
100
70
50
C
ob
0.1
0.2
0.4 0.6
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
30
0.5
1.0
2.0 3.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 6. Turn−Off Time
Figure 7. Capacitance
http://onsemi.com
3
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.06
V
CE
= 2.0 V
T
J
= 150°C
25°C
2.0
T
J
= 25°C
1.6
1.2
I
C
= 1.0 A
2.5 A
5.0 A
0.8
- 55°C
0.4
0
10
20
30
50
100
200 300
I
B
, BASE CURRENT (mA)
500
1000
0.1
1.0
2.0
0.2 0.3 0.4 0.6
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.06
0.1
0.2 0.3
0.5
q
VB
FOR V
BE
- 55°C to + 25°C
1.0
2.0 3.0 4.0
6.0
*
q
VC
FOR V
CE(sat)
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE
/4
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.06
0.1
0.2 0.3 0.4
0.6
1.0
2.0 3.0 4.0
6.0
0.8
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
Figure 11. Temperature Coefficients
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
10
0
10
-1
10
-2
REVERSE
I
C
= I
CES
FORWARD
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
10 M
V
CE
= 30 V
1.0 M
I
C
≈
I
CES
I
C
= 10 x I
CES
100 k
10 k
I
C
= 2 x I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
1.0 k
10
-3
- 0.3 - 0.2 - 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
+ 0.7
0.1 k
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
http://onsemi.com
4
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
4
V
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
1
2
3
S
A
−T−
SEATING
PLANE
K
G
D
3 PL
M
J
H
T B
M
W
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
L
M
R
N
U
L
P
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
M
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.504
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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