MDD 255
High Power
Diode Modules
V
RSM
V
DSM
V
1300
1500
1700
1900
2100
2300
Symbol
I
FRMS
I
FAVM
I
FSM
V
RRM
V
DRM
V
1200
1400
1600
1800
2000
2200
Type
3
1
2
I
FRMS
= 2x450 A
I
FAVM
= 2x270 A
V
RRM
= 1200-2200 V
3
2
MDD
MDD
MDD
MDD
MDD
MDD
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
Maximum Ratings
450
270
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9500
10200
8400
9000
451 000
437 000
353 000
340 000
-40...+150
150
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
°C
°C
°C
V~
V~
2
1
Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
International standard package
•
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
•
Planar passivated chips
•
Isolation voltage 3600 V~
•
UL registered E 72873
Applications
•
•
•
•
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
•
Simple mounting
•
Improved temperature and power cycling
•
Reduced protection circuits
3000
3600
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
other values
see MCC 255
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
30
1.4
0.8
0.6
0.140
0.07
0.18
0.09
700
260
12.7
9.6
50
mA
V
V
mΩ
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
M8x20
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
423
© 2004 IXYS All rights reserved
1-3
MDD 255
10000
FSM
10
6
It
2
V
R
= 0 V
A
2
s
A
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
500
A
450
8000
I
FAVM
400
350
300
DC
180° sin
120°
60°
30°
6000
T
VJ
= 45°C
4000
250
200
T
VJ
= 150°C
150
2000
100
50
0
0.001
10
5
0.01
0.1
0
1
t
ms
10
0
25
50
75
100
T
C
s
t
1
125
150
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
500
P
tot
W
400
Fig. 2 I
2
t versus time (1-10 ms)
600
R
thKA
K/W
Fig. 3 Maximum forward current
at case temperature
T
VJ
= 125°C
V
R
= 600 V
A
300
DC
180° sin
120°
60°
30°
0.1
0.2
0.3
0.4
0.6
0.8
1.2
500
I
RM
400
300
IF = 400 A
200
200
100
100
0
0
100
200
300
400 A
I
FAVM
0
25
50
75
100
125
T
A
150
0
0
50
100
A/µs
150
di
F
/dt
200
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
1500
P
tot
W
1250
R
1000
L
Fig. 5 Typ. peak reverse current
I
RM
versus -di
F
/dt
25
µs
t
rr
T
VJ
= 125°C
V
R
= 600 V
R
thKA
K/W
0.06
0.08
0.1
0.15
0.2
0.3
0.5
20
15
IF = 400 A
750
Circuit
B2U
2 x MDD255
10
500
250
5
0
0
100
200
300
400
500 A
I
dAVM
0
25
50
75
100
125
T
A
150
0
0
50
100
A/µs
150
200
di
F
/dt
Fig. 6 Single phase rectifier bridge:Power dissipation vs. direct output current and
ambient temperature
R = resistive load, L = inductive load
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 7 Typ. recovery time t
rr
versus -di
F
/dt
423
2-3
© 2004 IXYS All rights reserved
MDD 255
2500
W
P
tot
2000
R
thKA
K/W
1500
0.03
0.06
0.1
0.15
0.2
0.3
0.4
1000
Circuit
B6U
3 x MDD255
500
0
0
200
400
600
800 A
I
dAVM
0
25
50
75
100
125 °C 150
T
A
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature
0.25
K/W
0.20
Z
thJC
0.15
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
30°
60°
120°
180°
DC
R
thJC
(K/W)
0.139
0.148
0.156
0.176
0.214
0.10
Constants for Z
thJC
calculation:
i
1
2
3
4
10
1
t
s
10
2
R
thi
(K/W)
0.0066
0.0358
0.0831
0.0129
t
i
(s)
0.00054
0.098
0.54
12
0.05
0.00
10
-3
10
-2
10
-1
10
0
Fig. 9 Transient thermal impedance junction to case (per diode)
0.30
K/W
0.25
Z
thJK
0.20
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
30°
60°
120°
180°
DC
R
thJK
(K/W)
0.179
0.188
0.196
0.216
0.254
0.15
Constants for Z
thJK
calculation:
i
1
2
3
4
5
R
thi
(K/W)
0.0066
0.0358
0.0831
0.0129
0.04
t
i
(s)
0.00054
0.098
0.54
12
12
0.10
0.05
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
Fig. 10Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
423
© 2004 IXYS All rights reserved
3-3
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