PD-95816E
IRHNJ67130
JANSR2N7587U3
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
IRHNJ67130
IRHNJ63130
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.042
0.042
I
D
22A*
22A*
QPL Part Number
JANSR2N7587U3
JANSF2N7587U3
SMD-0.5
REF: MIL-PRF-19500/746
R
TECHNOLOGY
100V, N-CHANNEL
6
Description
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
improved immunity to Single Event Effect (SEE) and have
been characterized for useful performance with Linear Energy
Transfer (LET) up to 90MeV/(mg/cm
2
). Their combination of
very low RDS(on) and faster switching times reduces power
loss and increases power density in today’s high speed
switching applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, ease of
paralleling and temperature stability of electrical parameters.
Features
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Surface Mount
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
22*
19
88
75
0.6
±20
73
22
7.5
3.8
-55 to + 150
300 (for 5s)
1.0 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
* Current is limited by package
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-12-10
IRHNJ67130
JANSR2N7587U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
100
–––
–––
2.0
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.11
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 19A
––– 0.042
–––
4.0
-8.83 –––
––– –––
–––
10
–––
25
––– 100
––– -100
–––
50
–––
15
–––
20
–––
25
–––
30
–––
60
–––
30
4.0
1730
340
6.0
1.03
–––
–––
–––
–––
–––
V
V
DS
= V
GS
, I
D
= 1.0mA
mV/°C
V
DS
= 15V, I
D2
= 19A
S
V
DS
= 80V, V
GS
= 0V
µA
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 22A
V
DS
= 50V
nC
V
GS
= 12V
V
DD
= 50V
I
D1
= 22A
ns
R
G
= 7.5
V
GS
= 12V
nH
Measured from center of Drain
pad to center of Source pad
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
pF
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22*
88
1.2
350
3.0
A
V
ns
µC
Test Conditions
T
J
=25°C, I
S
= 22A, V
GS
=0V
T
J
=25°C, I
F
= 22A,V
DD
≤ 25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Symbol
R
JC
Junction-to-Case
Parameter
Min.
–––
Typ.
–––
Max.
1.67
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 25V, starting T
J
= 25°C, L = 0.3mH, Peak I
L
= 22A, V
GS
= 12V
I
SD
22A, di/dt
420A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-12-10
IRHNJ67130
JANSR2N7587U3
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.045
0.042
1.2
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D2
= 19A
V
GS
= 12V, I
D2
= 19A
V
GS
= 0V, I
S
= 22A
Units
Test Conditions
1. Part numbers IRHNJ67130 (JANSR2N7587U3) and IRHNJ63130 (JANSF2N7587U3)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
39 ± 5%
61 ± 5%
90 ± 5%
Energy
(MeV)
315 ± 5%
345 ± 5%
375 ± 7.5%
Range
(µm)
40 ± 5%
32 ± 7.5%
29 ± 7.5%
VDS (V)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
0V
-5V
-10V
-15V
-19V
-20V
100
100
100
100
100
100
100
100
–––
100
30
–––
100
–––
–––
40
–––
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-12-10
IRHNJ67130
JANSR2N7587U3
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2019-12-10
International Rectifier HiRel Products, Inc.
IRHNJ67130
JANSR2N7587U3
Pre-Irradiation
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2019-12-10
International Rectifier HiRel Products, Inc.
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