IL260/IL261/IL262
High Speed Five-Channel Digital Isolators
Functional Diagrams
IN
1
IN
2
IN
3
IN
4
IN
5
OUT
1
OUT
2
OUT
3
OUT
4
OUT
5
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: 110 Mbps
1.2 mA/channel typical quiescent current
50 kV/μs typ.; 30 kV/μs min. common mode transient immunity
No carrier or clock for low EMI emissions and susceptibility
−40°C
to +85°C operating temperature
600 V
RMS
working voltage per VDE 0884
2500 V
RMS
isolation voltage per UL 1577
44000 year barrier life
Excellent magnetic immunity
2 ns typical pulse width distortion
100 ps pulse jitter
4 ns typical propagation delay skew
10 ns typical propagation delay
2 ns channel-to-channel skew
UL 1577 recognized; IEC 60747-5-5 (VDE 0884) certified
0.15", 0.3", and True 8™ mm 16-pin SOIC; 16-pin QSOP packages
IL2
14060-1
400
IL260
IN
1
IN
2
IN
3
IN
4
OUT
5
OUT
1
OUT
2
OUT
3
OUT
4
IN
5
Applications
•
•
•
•
•
•
ADCs and DACs
Multiplexed data transmission
Board-to-board communication
Peripheral interfaces
Equipment covered under IEC 61010-1 Edition 3
5 kV
RMS
rated IEC 60601-1 medical applications
Description
NVE’s IL260-Series five-channel high-speed digital isolators are
CMOS devices manufactured with NVE’s patented* IsoLoop
®
spintronic Giant Magnetoresistive (GMR) technology.
A unique ceramic/polymer composite barrier provides excellent
isolation and virtually unlimited barrier life.
IL261
IN
1
IN
2
IN
3
OUT
4
OUT
5
OUT
1
OUT
2
OUT
3
IN
4
IN
5
All transmit and receive channels operate at 110 Mbps over the full
temperature and supply voltage range. The symmetric magnetic
coupling barrier provides a typical propagation delay of only 10 ns
and a pulse width distortion of 2 ns, achieving the best specifications
of any isolator. The unique fifth channel can be is used to distribute
isolated clocks or handshake signals to multiple delta-sigma A/D
converters. High channel density makes these devices ideal for
isolating ADCs and DACs, parallel buses and peripheral interfaces.
Typical transient immunity of 50 kV/µs is unsurpassed.
Performance is specified over the temperature range of
−40°C
to
+85°C without derating.
The five-channel devices provide the highest channel density
available. Parts are available in an ultraminiature 16-pin QSOP,
as well as 0.15"and 0.3"-wide SOIC packages.
IL262
IsoLoop is a registered trademark of NVE Corporation.
*U.S. Patent number 5,831,426; 6,300,617 and others.
REV. R
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL260/IL261/IL262
Absolute Maximum Ratings
(1)
Parameters
Storage Temperature
Junction Temperature
Ambient Operating Temperature
Supply Voltage
Input Voltage
Output Voltage
Output Current Drive
Lead Solder Temperature
ESD
Symbol
T
S
T
J
T
A
V
DD
1
,V
DD
2
V
I
V
O
I
O
Min.
−55
−55
−40
−0.5
−0.5
−0.5
−10
Typ.
Max.
150
150
85
7
V
DD
+ 0.5
V
DD
+ 0.5
10
260
Units
°C
°C
°C
V
V
V
mA
°C
kV
Test Conditions
2
10 sec.
HBM
Recommended Operating Conditions
Parameters
Ambient Operating Temperature
Junction Temperature
Supply Voltage
Logic High Input Voltage
Logic Low Input Voltage
Input Signal Rise and Fall Times
Symbol
T
A
T
J
V
DD
1
,V
DD
2
V
IH
V
IL
t
IR
, t
IF
Min.
−40
−40
3.0
2.4
0
Typ.
Max.
85
110
5.5
V
DD
0.8
1
Units
°C
°C
V
V
V
μs
Test Conditions
3.3/5.0 V Operation
Insulation Specifications
Parameters
QSOP
0.15'' SOIC
0.3'' SOIC
Total Barrier Thickness (internal)
Leakage Current
(5)
Barrier Resistance
(5)
Barrier Capacitance
(5)
Comparative Tracking Index
High Voltage Endurance
AC
(Maximum Barrier Voltage
for Indefinite Life)
DC
Creepage Distance
(external)
Barrier Life
Symbol
Min.
4.03
4.03
8.03
0.012
R
IO
C
IO
CTI
V
IO
Typ.
Max.
Units
mm
8.3
0.013
0.2
>10
14
5
mm
μA
RMS
Ω
pF
V
V
RMS
V
DC
44000
Years
Test Conditions
Per IEC 60601
240 V
RMS
500 V
f = 1 MHz
Per IEC 60112
At maximum
operating temperature
100°C, 1000 V
RMS
, 60%
CL activation energy
≥175
1000
1500
Thermal Characteristics
Parameter
Junction–Ambient
Thermal Resistance
Junction–Case (Top)
Thermal Resistance
Power Dissipation
QSOP
0.15" SOIC
0.3" SOIC
QSOP
0.15" SOIC
0.3" SOIC
QSOP
0.15" SOIC
0.3" SOIC
Symbol
θ
JA
Ψ
JT
P
D
Min.
Typ.
60
60
60
10
10
20
Max.
Units
°C/W
°C/W
675
700
800
mW
Test Conditions
Soldered to double-
sided board;
free air
2
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL260/IL261/IL262
Safety and Approvals
IEC 60747-5-5 (VDE 0884)
(File Number 5016933-4880-0001)
•
Working Voltage (V
IORM
) 600 V
RMS
(848 V
PK
); basic insulation; pollution degree 2
•
Transient overvoltage (V
IOTM
) and surge voltage (V
IOSM
) 4000 V
PK
•
Each part tested at 1590 V
PK
for 1 second, 5 pC partial discharge limit
•
Samples tested at 4000 V
PK
for 60 sec.; then 1358 V
PK
for 10 sec. with 5 pC partial discharge limit
Safety-Limiting Values
Safety rating ambient temperature
Safety rating power (180°C)
Supply current safety rating (total of supplies)
Symbol
T
S
P
S
I
S
Value
180
270
54
Units
°C
mW
mA
IEC 61010-1
(Edition 2; TUV Certificate Numbers N1502812; N1502812-101)
Reinforced Insulation; Pollution Degree II; Material Group III
Part No. Suffix
-1
-3
None
Package
QSOP
SOIC
Wide-body SOIC/True 8™
Working Voltage
150 V
RMS
150 V
RMS
300 V
RMS
UL 1577
(Component Recognition Program File Number E207481)
Each part tested at 3000 V
RMS
(4240 V
PK
) for 1 second; each lot sample tested at 2500 V
RMS
(3530 V
PK
) for 1 minute
Soldering Profile
Per JEDEC J-STD-020C, MSL 1
3
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL260/IL261/IL262
Parameters
Input Quiescent Current
Output Quiescent Current
Logic Input Current
Logic High Output Voltage
Logic Low Output Voltage
IL260
IL261
IL262
IL260
IL261
IL262
3.3 Volt Electrical Specifications
(T
min
to T
max
)
Symbol
Min.
Typ.
Max.
300
400
I
DD1
1.2
1.75
2.4
3.5
6
8.75
I
DD2
4.8
7
4.8
7
I
i
−10
10
V
DD
−0.1
V
DD
V
OH
0.8 x V
DD
0.9 x V
DD
0
0.1
V
OL
0.5
0.8
Switching Specifications
(V
DD
= 3.3 V)
100
110
PW
10
t
PHL
t
PLH
PWD
t
PSK
t
R
t
F
|CM
H
|,|CM
L
|
30
12
12
2
4
2
2
50
2
140
3
240
18
18
3
6
4
4
Units
μA
mA
mA
mA
mA
mA
μA
V
V
Test Conditions
I
O
=
−20 μA,
V
I
=V
IH
I
O
=
−4
mA, V
I
=V
IH
I
O
= 20
μA,
V
I
=V
IL
I
O
= 4 mA, V
I
=V
IL
C
L
= 15 pF
50% Points, V
O
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
V
CM
= 1500 V
DC
t
TRANSIENT
= 25 ns
C
L
= 15 pF
per channel
Maximum Data Rate
Minimum Pulse Width
(7)
Propagation Delay Input to Output
(High to Low)
Propagation Delay Input to Output
(Low to High)
Pulse Width Distortion |t
PHL
−t
PLH
|
(2)
Propagation Delay Skew
(3)
Output Rise Time (10%–90%)
Output Fall Time (10%–90%)
Common Mode Transient Immunity
(Output Logic High to Logic Low)
(4)
Channel-to-Channel Skew
Dynamic Power Consumption
(6)
Mbps
ns
ns
ns
ns
ns
ns
ns
kV/μs
ns
μA/Mbps
Power Frequency Magnetic Immunity
Pulse Magnetic Field Immunity
Damped Oscillatory Magnetic Field
Cross-axis Immunity Multiplier
(9)
Magnetic Field Immunity
(8)
(V
DD2
= 3V, 3V<V
DD1
<5.5V)
H
PF
1000
1500
H
PM
1800
2000
H
OSC
1800
2000
K
X
2.5
A/m
A/m
A/m
50Hz/60Hz
t
p
= 8µs
0.1Hz – 1MHz
5
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
微控制器 MCU
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