电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SNFPT023306BD4JS00

产品描述Film Capacitor, Polypropylene, 1600V, 5% +Tol, 5% -Tol, 0.033uF,
产品类别无源元件    电容器   
文件大小642KB,共12页
制造商WIMA
官网地址https://www.wima.de/
标准
下载文档 详细参数 全文预览

SNFPT023306BD4JS00概述

Film Capacitor, Polypropylene, 1600V, 5% +Tol, 5% -Tol, 0.033uF,

SNFPT023306BD4JS00规格参数

参数名称属性值
是否Rohs认证符合
Objectid2066758062
包装说明,
Reach Compliance Codecompliant
Country Of OriginGermany
ECCN代码EAR99
YTEOL7.25
电容0.033 µF
电容器类型FILM CAPACITOR
介电材料POLYPROPYLENE
高度21 mm
JESD-609代码e3
长度31.5 mm
负容差5%
端子数量2
最高工作温度100 °C
最低工作温度-55 °C
封装形式PCB Mount
包装方法Box
正容差5%
额定(AC)电压(URac)650 V
额定(直流)电压(URdc)1600 V
端子面层Tin (Sn)
宽度11 mm

文档预览

下载PDF文档
WIMA Snubber FKP
Snubber FKP Capacitors for High Pulse Applications with
Metal Foil Electrodes, Schoopage Contacts and Self-Healing
Internal Series Connection
Special Features
˜
High pulse duty
˜
Self-healing
˜
Particularly reliable contact-
configurations: 4-pin versions and
screwable plate connections
˜
Internal series connection
˜
Very low dissipation factor
˜
Negative capacitance change
versus temperature
˜
According to RoHS 2011/65/EU
D
Electrical Data
Capacitance range:
0.01
m
F to 2.2
m
F
Rated voltages:
630 VDC, 1000 VDC, 1600 VDC,
2000 VDC, 3000 VDC, 4000 VDC
Capacitance tolerances:
±20%, ±10%, ±5% (other tolerances are
available subject to special enquiry)
Operating temperature range:
–55) C to +100) C
Insulation resistance
at +20+ C:
C
T
0.33
mF:
1 x 10
5
(mean value: 5 x 10
5
M¸)
C
0.33
mF:
30 000 sec (M¸ x
mF)
(mean value: 100 000 sec)
Measuring voltage: 100 V/1 min.
Test voltage:
2 sec
L
41.5
41.5
56
at f
1 kHz
10 kHz
100 kHz
Capacitance
mF
0.01
0.033
0.1
0.33
1.0
...
...
...
...
...
0.022
0.068
0.22
0.68
2.2
T
2000 VDC
1.6 U
r
1.4 U
r
1.2 U
r
3000 VDC
1.2 U
r
1.2 U
r
1.2 U
r
C
T
0.1
mF
T
3 x 10
-4
T
4 x 10
-4
T
15 x 10
-4
Climatic test category:
55/100/56 in accordance with IEC
Voltage derating:
A voltage derating factor of 1.35 % per K
must be applied from +85+ C for DC
voltages and from +75+ C for AC
voltages
Reliability:
Operational life
300 000 hours
Failure rate
1 fit (0.5 x U
r
and 40) C)
Specific dissipation:
Box size*
Specific dissipation in Watts per K
W x H x L in mm above the ambient temperature
19 x 31 x 56
23 x 34 x 56
27 x 37.5 x 56
33 x 48 x 56
37 x 54 x 56
* other box sizes see page 10.
Typical Applications
For high pulse and high frequency
applications requiring extremely
reliable contacts e.g.
˜
IGBT-applications
Construction
Dielectric:
Polypropylene (PP) film
Capacitor electrodes:
Aluminium foil and single-sided metallized
plastic film
Internal construction:
0.068
0.079
0.092
0.122
0.142
Dissipation factors
at + 20) C: tan
d
0.1
mF
< C
T
1.0
mF
T
3 x 10
-4
T
6 x 10
-4
C > 1.0
mF
T
3 x 10
-4
Maximum pulse rise time:
Plastic film
Metal foil electrode
Vacuum-deposited
electrode
Metal contact layer
(schoopage)
Terminating plate
max. pulse rise time V/msec at T
A
< 40) C
630 VDC 1000 VDC 1600 VDC 2000 VDC 3000 VDC 4000 VDC
9000
9000
5000
1600
11000
9000
9000
5000
2000
11000
9000
9000
5000
11000
9000
9000
5000
11000
9000
9000
5000
11000
9000
9000
5000
Encapsulation:
Solvent-resistant, flame-retardant plastic
case with epoxy resin seal, UL 94 V-0
Terminations:
Tinned wire or plates.
Marking:
Colour: Red. Marking: Black.
Epoxy resin seal: Red
for pulses equal to the rated voltage
Mounting Recommendation
Excessive mechanical strain, e.g. pressure
or shock onto the capacitor body, is to be
avoided during mounting and usage of
the capacitors. When fixing the plates the
screw torque is to be limited to max. 5 Nm.
For further details and graphs please
refer to Technical Information.
Packing
Packing units at the end of the catalogue.
Packing quantities may vary depending on
the plate version.
90
02.14
有关quartus中ip核问题
有两个问题请教:1. quartus的ip核中移位寄存器、ram能实现并行输入串行输出吗?如果能该如何设置?2.quartus13.0中ip catalog在哪可找到?...
Maxwell_CZH FPGA/CPLD
WINCE multi-open 驱动问题
请教各位,我写了一个多用户的驱动,就是那种可以多个应用同时打开的驱动,,然后每个应用都用轮训的方式从驱动那里得到数据,我在驱动中为每个调用者都创建了一个BUFFER,然后谁来读,我就COPY ......
ronc2000 嵌入式系统
UCOSII中任务堆栈如何具体的实现保存CPU寄存器的值?
小弟刚刚学习UCOS-II,问题可能比较low,请各位大神不吝赐教,感激不尽。 如题所说,UCOS中穿件任务时都会调用到一个函数OSTaskStkInit(),该函数位于os_cpu_c.c 该函数将任务创建时 开辟 ......
sayato 实时操作系统RTOS
FinFET技术发明人胡正明教授
FinFET技术发明人胡正明教授 2010年后,持续数十年的Bulk CMOS工艺技术在20nm走到尽头,胡正明教授在20年前开始探索并发明的FinFET和FD-SOI工艺,成为半导体产业仅有的两个重要选择,因为他的 ......
qwqwqw2088 模拟与混合信号
STM32_在KEIL_MDK环境下使用V3.4库.pdf
84640初学者看。...
范小川 stm32/stm8
请教关于驱动开发
我想做关于嵌入式的驱动开发方向的工作,不知道是否有前景?...
mosquit 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2447  176  1920  2341  2579  50  4  39  48  52 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved