Data Sheet
26301.102a
3935
Package ED, 44-Pin PLCC
3-PHASE POWER MOSFET CONTROLLER
— For Automotive Applications
The A3935 is designed specifically for automotive applications that
require high-power motors. Each provides six high-current gate drive
outputs capable of driving a wide range of n-channel power MOSFETs.
A requirement of automotive systems is steady operation over a
varying battery input range. The A3935 integrates a pulse-frequency
modulated boost converter to create a constant supply voltage for
driving the external MOSFETs. Bootstrap capacitors are utilized to
provide the above battery supply voltage required for n-channel FETs.
Direct control of each gate output is possible via six TTL-compat-
ible inputs. A differential amplifier is integrated to allow accurate
measurement of the current in the three-phase bridge.
Package JP, 48-Pin LQFP
Package LQ, 36-Pin SOIC
Diagnostic outputs can be continuously monitored to protect the
driver from short-to-battery, short-to-supply, bridge-open, and battery
under/overvoltage conditions. Additional protection features include
dead-time, VDD undervoltage, and thermal shutdown.
The A3935 is supplied in a choice of three packages, a 44-lead
PLCC with copper batwing tabs (suffix ED), a 48-lead low profile QFP
with exposed thermal pad (suffix JP), and a 36-lead 0.8 mm pitch SOIC
(suffix LQ).
ABSOLUTE MAXIMUM RATINGS
Load Supply Voltages, VBAT, VDRAIN,
VBOOST, BOOSTD ...
-0.6 V to 40 V
Output Voltage Ranges,
GHA/GHB/GHC, V
GHX
..
-4 V to 55 V
SA/SB/SC, V
SX
...............
-4 V to 40 V
GLA/GLB/GLC, V
GLX
....
-4 V to 16 V
CA/CB/CC, V
CX
..........
-0.6 V to 55 V
Sense Circuit Voltages,
CSP,CSN, LSS ...............
-4 V to 6.5 V
Logic Supply Voltage,
V
DD
...........................
-0.3 V to +6.5 V
Logic Input/Outputs and OVSET, BOOSTS,
CSOUT, VDSTH .........
-0.3 V to 6.5 V
Operating Temperature Range,
T
A
...........................
-40°C to +135°C
Junction Temperature, T
J
...........
+150°C
Storage Temperature Range,
T
S
...........................
-55°C to +150°C
* Fault conditions that produce excessive
junction temperature will activate device
thermal shutdown circuitry. These conditions
can be tolerated, but should be avoided.
FEATURES
!
Drives wide range of n-channel MOSFETs in 3-phase bridges
!
PFM boost converter for use with low-voltage battery supplies
!
Internal LDO regulator for gate-driver supply
!
Bootstrap circuits for high-side gate drivers
!
Current monitor output
!
Adjustable battery overvoltage detection.
!
Diagnostic outputs
Motor lead short-to-battery, short-to-ground, and
bridge-open protection
!
Undervoltage protection
!
-40 °C to +150 °C, T
J
operation
!
Thermal shutdown
!
Always order by complete part number, e.g.,
A3935KLQ
.
3935
THREE-PHASE POWER
MOSFET CONTROLLER
Functional Block Diagram
See pages 8 and 9 for terminal assignments and descriptions.
2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright © 2003 Allegro MicroSystems, Inc.
3935
THREE-PHASE POWER
MOSFET CONTROLLER
A3935KED (PLCC)
A3935KLQ (SOIC)
* Measured on “High-K” multi-layer PWB per JEDEC Standard JESD51-7.
† Measured on typical two-sided PWB with power tabs (terminals 1, 2, 11, 12, 22, 23, 34, and 35) connected to copper foil with an
area of 3.8 square inches (2452 mm
2
) on each side. See Application Note 29501.5,
Improving Batwing Power Dissipation,
for
additional information.
www.allegromicro.com
3
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS:
unless otherwise noted at T
J
= -40°C to +150°C, V
BAT
= 7 V to 16 V,
V
DD
= 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
Limits
Characteristics
Power Supply
V
DD
Supply Current
V
BAT
Supply Current
Battery Voltage Operating Range
Bootstrap Diode Forward Voltage
I
DD
I
BAT
V
BAT
V
DBOOT
I
DBOOT
= -I
cx
= 10 mA, V
DBOOT
= V
REG
– V
CX
I
DBOOT
= -I
cx
= 100 mA
Bootstrap Diode Resistance
Bootstrap Diode Current Limit
Bootstrap Quiescent Current
Bootstrap Refresh Time
VREG Output Voltage
1
VREG Dropout Voltage
2
Gate Drive Avg. Supply Current
VREG Input Bias Current
Boost Supply
V
BOOST
Output Voltage Limit
V
BOOST
Output Volt. Limit Hyst.
Boost Switch ON Resistance
Max. Boost Switch Current
Boost Current Limit Threshold Volt.
OFF Time
Blanking Time
V
BOOSTM
∆V
BOOSTM
r
DS(on)
I
BOOSTSW
V
BI(th)
t
off
t
blank
Increasing V
BOOSTS
I
BOOSTD
< 300 mA
V
BAT
= 7 V
14.9
35
–
–
0.45
3.0
100
–
–
1.4
–
–
–
–
16.3
180
3.3
300
0.55
8.0
220
V
mV
Ω
mA
V
µs
ns
r
DBOOT
I
DM
I
CX
t
refresh
V
REG
V
REGDO
I
REG
I
REGBIAS
r
D
(100 mA) = [V
D
(150 mA) – V
D
(50 mA)]/100 mA
3 V < [V
REG
– V
CX
] < 12 V
V
CX
= 40 V, GHx = ON
V
SX
= low to guarantee
∆V
= +0.5 V refresh of
0.47 µF Boot Cap at V
cx
– V
sx
= +10 V
V
BAT
= 7 V to 40 V, V
BOOST
from Boost Reg
V
REGDO
= V
boost
– V
reg
, I
reg
= 40 mA
No external dc load at VREG, C
REG
= 10 µF
Current into V
BOOST
, ENABLE = 0
All logic inputs = 0 V
All logic inputs = 0 V
–
–
7.0
0.8
1.5
2.5
-150
10
–
12.7
–
–
–
–
–
–
–
–
–
–
–
–
–
0.9
–
–
7.0
3.0
40
2.0
2.3
7.5
-1150
30
2.0
14
–
40
4.0
mA
mA
V
V
V
Ω
mA
µA
µs
V
V
mA
mA
Symbol
Conditions
Min
Typ
Max
Units
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defined as coming out of (sourcing) the specified device terminal.
1. For V
BOOSTM
< V
BOOST
< 40 V power dissipation in the V
REG
LDO increases. Observe T
J
< 150 °C limit.
2. With V
BOOST
decreasing Dropout Voltage measured at V
REG
= V
REGref
– 200 mV where V
REG(ref)
= V
REG
at V
BOOST
= 16 V.
4
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Continued next page …
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS:
unless otherwise noted at T
J
= -40°C to +150°C, V
BAT
= 7 V to 16 V,
V
DD
= 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
Limits
Characteristics
Control Logic
Logic Input Voltages
V
I(1)
V
I(0)
Logic Input Currents
I
I(1)
I
I(0)
Input Hysteresis
Logic Output High Voltage
Logic Output Low Voltage
V
hys
V
O(H)
V
I(L)
I
O(H)
= -800 uA
I
O(L)
= 1.6 mA
Minimum high level input for logical “one”
Maximum low level input for logical “zero”
V
I
= V
DD
V
I
= 0.8 V
2.0
–
–
50
100
V
DD
-0.8
–
–
–
–
–
–
–
–
–
0.8
500
–
300
–
0.4
V
V
µA
µA
mV
V
V
Symbol
Conditions
Min
Typ
Max
Units
Gate Drives, GHx ( internal SOURCE or upper switch stages)
Output High Voltage
V
DSL(H)
GHx: I
xU
= -10 mA, V
sx
= 0
GLx: I
xU
= -10 mA, V
lss
= 0
Source Current (pulsed)
I
xU
V
SDU
= 10 V, T
J
= 25 °C
V
SDU
= 10 V, T
J
= 135 °C
Source ON Resistance
r
SDU(on)
I
xU
= -150 mA, Tj = 25 °C
I
xU
= -150 mA, T
J
= 135 °C
Gate Drives, GLx ( internal SINK or lower switch stages)
Sink Current (pulsed)
I
xL
V
DSL
= 10 V, T
J
= 25 °C
V
DSL
= 10 V, T
J
= 135 °C
Sink ON Resistance
r
DSL(on)
I
xL
= +150 mA, T
J
= 25 °C
I
xL
= +150 mA, T
J
= 135 °C
Gate Drives, GHx, GLx (General)
Propagation Delay, Logic only
Output Skew Time
Dead Time
(Shoot-Through Prevention)
t
pd
t
sk(o)
t
dead
Logic input to unloaded GHx, GLx
Grouped by edge, phase-to-phase
Between GHx, GLx transitions of same phase
–
–
75
–
–
–
150
50
180
ns
ns
ns
–
550
1.8
3.0
850
–
–
–
–
–
6.0
7.5
mA
mA
Ω
Ω
V
REG
-2.26 –
V
REG
-0.26 –
–
400
4.0
7.0
800
–
–
–
V
REG
V
REG
–
–
10
15
V
V
mA
mA
Ω
Ω
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defined as coming out of (sourcing) the specified device terminal.
For GH
X
: V
SDU
= V
CX
– V
GHX
, V
DSL
= V
GHX
– V
SX
, V
DSL(H)
= V
CX
– V
SDU
– V
SX
.
For GL
X
: V
SDU
= V
REG
– V
GLX
, V
DSL
= V
GLX
– V
LSS
, V
DSL(H)
= V
REG
– V
SDU
– V
LSS.
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5
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