电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT48H8M16LFB4-8 IT:J TR

产品描述IC sdram 128mbit 125mhz 54vfbga
产品类别存储   
文件大小3MB,共63页
制造商Micron(美光)
官网地址http://www.micron.com/
标准  
下载文档 详细参数 全文预览

MT48H8M16LFB4-8 IT:J TR概述

IC sdram 128mbit 125mhz 54vfbga

MT48H8M16LFB4-8 IT:J TR规格参数

参数名称属性值
Datasheets
MT48HxMxxLF
Product Photos
MT48H8M16LFB4-75K TR
Standard Package1
CategoryIntegrated Circuits (ICs)
FamilyMemory
系列
Packaging
Cut Tape (CT)
Format - MemoryRAM
Memory TypeMobile LPSDR SDRAM
Memory Size128M (8M x 16)
速度
Speed
125MHz
InterfaceParallel
Voltage - Supply1.7 V ~ 1.9 V
Operating Temperature-40°C ~ 85°C
封装 / 箱体
Package / Case
54-VFBGA
Supplier Device Package54-VFBGA (8x8)
Other Names557-1236-1

文档预览

下载PDF文档
128Mb: x16 Mobile SDRAM
Features
Mobile SDRAM
MT48H8M16LF - 2 Meg x 16 x 4 banks
Features
• V
DD
/V
DD
Q = 1.70–1.95V
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, or 8
• Auto precharge and concurrent auto precharge
modes
• Auto refresh and self refresh mode
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Partial-array self refresh (PASR) power-saving mode
• Deep power-down mode
• Programmable output drive strength
• On-chip temperature sensor to control the self-
refresh rate
• Operating temperature ranges
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Figure 1:
54-Ball VFBGA Assignment
(Top View)
2
DQ15
1
A
B
C
D
E
F
G
H
J
V
SS
3
V
SS
Q
4
5
6
7
V
DD
Q
8
DQ0
9
V
DD
DQ14
DQ13
V
DD
Q
V
SS
Q
DQ2
DQ1
DQ12
DQ11
V
SS
Q
V
DD
Q
DQ4
DQ3
DQ10
DQ9
V
DD
Q
V
SS
Q
DQ6
DQ5
DQ8
DNU
V
SS
V
DD
LDQM
DQ7
UDQM
CLK
CKE
CAS#
RAS#
WE#
NC
A11
A9
BA0
BA1
CS#
A8
A7
A6
A0
A1
A10
V
SS
A5
A4
A3
A2
V
DD
Top View
(Ball Down)
Options
• V
DD
/V
DD
Q
1.8V/1.8V
• Configurations
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Package/Ball out
54-ball VFBGA, 8mm x 8mm
• Timing (cycle time)
7.5ns @ CL = 3 (133 MHz)
8ns @ CL = 3 (125 MHz)
• Operating temperature
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
• Die revision designator
Marking
H
8M16
B4
-75
-8
none
IT
:J
Table 1:
Address Table
8 Meg x 16
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Clock
Frequency
CL = 2
104
MHz
83
MHz
CL = 3
133
MHz
125
MHz
Access Time
8ns
8ns
6ns
7ns
Speed
Grade
-75
-8
Setup Hold
CL = 2 CL = 3 Time Time
2.5ns
2.5ns
1ns
1ns
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_1.fm - Rev. C 2/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 979  1691  2462  2656  605  42  10  46  59  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved