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4N22
4N23
4N24
Single Channel Optocoupler
DESCRIPTION
The 4N2X family of single channel optocouplers contains an aluminum
gallium arsenide IRLED, optically coupled to a silicon, planar
phototransistor. The optocoupler is built on a TO-5 header with a metal
can welded on for hermeticity. The collector of the phototransistor is
electrically connected to the case (see 4N2XA for electrically isolated
part). This optocoupler is capable of transmitting electrically isolated
signals between two galvanic sources. The potential difference between
transmitter and receiver should not exceed the stated isolation voltage.
The 4N22, 4N23, and 4N24 devices can be tested to customer
specifications or to MIL-PRF-19500 JAN, JANTX, or JANTXV levels.
FEATURES
q
q
q
q
q
High Reliability
Base lead eliminated for better noise immunity
Metal can hermetic package (TO-5)
Stability over wide temperature range
>1000V electrical isolation
Applications
q
q
q
q
q
Switching power supplies
Motor control
Line receiver
Eliminating ground loops
Level shifting
Package Dimensions
Schematic Diagram
Collector connected to case
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage ..................................................................................................................................................±1kV
Emitter-Collector Voltage ................................................................................................................................................4V
Collector-Emitter Voltage (VCEO, IF = 0)...........................................................................................................................35V
Collector-Base Voltage (VCBO, IF = 0)...............................................................................................................................35V
Reverse Input Voltage......................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1).......................................40mA
Peak Forward Input Current (Value applies for tw <1¼s, PRR <300 pps).............................................................................1A
Continuous Collector Current............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ......................................300mW
Storage Temperature.......................................................................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range...........................................................................................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds) ...............................................................................240°C
NOTES:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.
http://www.texas-opto.com/catalog/4n22_3_4/4n22_3_4.asp (1 of 3) [2/6/2002 2:47:41 PM]
ELECTRICAL CHARACTERISTICS INPUT LED
Stated
T
A
= 25°C Unless Otherwise
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward
-55°C
Voltage
+25°C
+125°C
TEST
CONDITIONS
V
R
= 2V
I
F
= 10 mA
SYMBOL MIN MAX
I
R
V
F
1
0.8
0.7
100
1.5
1.3
1.2
UNITS
¼A
V
OUTPUT TRANSISTOR
T
A
= 25°C Unless Otherwise Stated
SYMBOL MIN MAX
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
35
35
4
PARAMETER
TEST
CONDITIONS
UNITS
V
V
V
Collector-Base Breakdown Voltage I
C
= 100 ¼A, I
B
= 0, I
F
= 0
Collector-Emitter Breakdown Voltage I
C
= 1 mA, I
B
= 0, I
F
= 0
I
C
= 0 , I
E
= 100 ¼A, I
F
= 0
Emitter-Base Breakdown Voltage
COUPLED CHARACTERISTICS
T
A
= 25°C Unless Otherwise Stated
SYMBOL MIN MAX
0.15
0.2
0.4
2.5
6
10
1
2.5
4
1
2.5
4
100
100
0.3
0.3
0.3
10
11
5
V
©
pF
PARAMETER
On State Collector Current
On State Collector Current
4N22
4N23
4N24
4N22
4N23
4N24
4N22
4N23
4N24
4N22
4N23
4N24
+25 °C
+100
4N22
TEST
CONDITIONS
V
CE
= 5V, I
B
= 0, I
F
= 2mA
UNITS
mA
I
C(ON)
V
CE
= 5V, I
B
= 0, I
F
= 10mA
I
C(ON)
mA
On State Collector Current
-55°C
On State Collector Current
+100°C
Off State Collector Current
Off State Collector Current
°C
Collector-Emitter
Saturation
Voltage
V
CE
= 5V, I
B
= 0, I
F
= 10mA
I
C(ON)
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 20V, I
B
= 0, I
F
= 0 mA
V
CE
= 20V, I
B
= 0, I
F
= 0 mA
I
C(ON)
I
C(OFF)
I
C(OFF)
mA
nA
¼A
Input to Output Resistance
1
Input to Output Capacitance
1
I
C
= 2.5mA, I
B
= 0, I
F
= 20
mA
V
CE(SAT)
4N23 I
C
= 5mA, I
B
= 0, I
F
= 20 mA
4N24 I
C
= 10mA, I
B
= 0, I
F
= 20 mA
V
IN-OUT
= 1 kV
R
I-O
ALL
ALL
f = 1MHz, V
IN-OUT
= 1 kV
C
I-O
http://www.texas-opto.com/catalog/4n22_3_4/4n22_3_4.asp (2 of 3) [2/6/2002 2:47:41 PM]
Rise Time
Fall Time
4N22
V =10V, I
F
=10mA, R
L
=100
4N23
CC
©
4N24
4N22
V =10V, I
F
=10mA, R
L
=100
4N23
CC
©
4N24
t
r
t
f
15
15
20
15
15
20
¼s
¼s
NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input
diode leads shorted together.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Input Current, Low Level
Input Current, High Level
Supply Voltage
SYMBOL
I
FL
I
FH
V
CE
MIN
0
2
5
MAX
1
10
10
UNITS
¼A
mA
V
The 4N2X family of optocouplers can be screened for commercial (0 to +70 degrees C) or over the full military operating temperature range (-55
to +125 degrees C). Parts can be screened to JANTX level or other customer specific requirements.
714 Shepherd Drive * Garland, Texas 75042 * 972/487-0085
http://www.texas-opto.com/catalog/4n22_3_4/4n22_3_4.asp (3 of 3) [2/6/2002 2:47:41 PM]
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