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LT1158ISW#TR

产品描述IC driver pwr mosfet N-CH 16soic
产品类别模拟混合信号IC    驱动程序和接口   
文件大小245KB,共22页
制造商Linear ( ADI )
官网地址http://www.analog.com/cn/index.html
下载文档 详细参数 全文预览

LT1158ISW#TR概述

IC driver pwr mosfet N-CH 16soic

LT1158ISW#TR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Linear ( ADI )
零件包装代码SOIC
包装说明SOP, SOP16,.4
针数16
Reach Compliance Code_compli
ECCN代码EAR99
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G16
JESD-609代码e0
长度10.2995 mm
湿度敏感等级1
功能数量1
端子数量16
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP16,.4
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)235
电源12 V
认证状态Not Qualified
座面最大高度2.642 mm
最大供电电压30 V
最小供电电压5 V
标称供电电压12 V
表面贴装YES
技术BIPOLAR
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间20
断开时间0.55 µs
宽度7.49 mm

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下载PDF文档
LT1158
Half Bridge N-Channel
Power MOSFET Driver
FEATURES
n
n
n
n
n
n
n
n
n
n
n
n
DESCRIPTION
A single input pin on the LT
®
1158 synchronously controls
two N-channel power MOSFETs in a totem pole configura-
tion. Unique adaptive protection against shoot-through
currents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
A continuous current limit loop in the LT1158 regulates
short-circuit current in the top power MOSFET. Higher
start-up currents are allowed as long as the MOSFET V
DS
does not exceed 1.2V. By returning the
FAULT
output to
the enable input, the LT1158 will automatically shut down
in the event of a fault and retry when an internal pull-up
current has recharged the enable capacitor.
An on-chip charge pump is switched in when needed to
turn on the top N-channel MOSFET continuously. Special
circuitry ensures that the top side gate drive is safely
maintained in the transition between PWM and DC opera-
tion. The gate-to-source voltages are internally limited to
14.5V when operating at higher supply voltages.
L,
LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other
trademarks are the property of their respective owners. Protected by U.S. Patents including
5365118.
Drives Gate of Top Side MOSFET Above V
+
Operates at Supply Voltages from 5V to 30V
150ns Transition Times Driving 3000pF
Over 500mA Peak Driver Current
Adaptive Non-Overlap Gate Drives
Continuous Current Limit Protection
Auto Shutdown and Retry Capability
Internal Charge Pump for DC Operation
Built-In Gate Voltage Protection
Compatible with Current-Sensing MOSFETs
TTL/CMOS Input Levels
Fault Output Indication
APPLICATIONS
n
n
n
n
n
n
PWM of High Current Inductive Loads
Half Bridge and Full Bridge Motor Control
Synchronous Step-Down Switching Regulators
Three-Phase Brushless Motor Drive
High Current Transducer Drivers
Battery-Operated Logic-Level MOSFETs
TYPICAL APPLICATION
24V
1N4148
Top and Bottom Gate Waveforms
BOOST
T GATE DR
T GATE FB
T SOURCE
0.1μF
IRFZ34
BOOST DR
+
10μF
V
+
V
+
+
500μF
LOW
ESR
PWM
0Hz TO
100kHz
INPUT
LT1158
SENSE
+
+
R
SENSE
0.015Ω
LOAD
V
IN
= 24V
R
L
= 12Ω
1158 TA02
+
1μF
ENABLE
FAULT
BIAS
SENSE
B GATE DR
B GATE FB
GND
IRFZ34
0.01μF
LT1158 TA01
1158fb
1

 
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