BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1.
Product overview
Package
NXP
BC807
BC807W
BC327
[1]
[1]
Type number
NPN complement
JEITA
-
SC-70
SC-43A
BC817
BC817W
BC337
SOT23
SOT323
SOT54 (TO-92)
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W; BC327-16
BC807-25; BC807-25W; BC327-25
BC807-40; BC807-40W; BC327-40
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Conditions
open base;
I
C
= 10 mA
Min
-
-
-
Typ
-
-
-
Max
−45
Unit
V
−500
mA
−1
A
I
C
=
−100
mA;
V
CE
=
−1
V
[1]
100
100
160
250
-
-
-
-
600
250
400
600
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
2. Pinning information
Table 3.
Pin
SOT23
1
2
3
base
emitter
collector
1
2
2
sym013
Pinning
Description
Simplified outline
Symbol
3
1
3
SOT323
1
2
3
base
emitter
collector
3
1
2
sym013
3
1
2
sot323_so
SOT54
1
2
3
emitter
base
collector
1
2
3
001aab347
3
2
1
006aaa149
SOT54A
1
2
3
emitter
base
collector
1
2
3
001aab348
3
2
1
006aaa149
SOT54 variant
1
2
3
emitter
base
collector
1
2
3
001aab447
3
2
1
006aaa149
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BC807
BC807W
BC327
[2]
[1]
[2]
Type number
[1]
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT323
-
SC-70
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
BC807
BC807-16
BC807-25
BC807-40
BC807W
BC807-16W
BC807-25W
BC807-40W
BC327
BC327-16
BC327-25
BC327-40
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
5D*
5A*
5B*
5C*
5D*
5A*
5B*
5C*
C327
C32716
C32725
C32740
Type number
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC807
BC807W
BC327
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base;
I
C
= 10 mA
open collector
Min
-
-
-
-
-
-
Max
−50
−45
−5
−500
−1
−200
250
200
625
+150
150
+150
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC807
BC807W
BC327
[1]
[2]
Conditions
Min
Typ
Max
Unit
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
-
-
-
500
625
200
K/W
K/W
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off current
Conditions
I
E
= 0 A; V
CB
=
−20
V
I
E
= 0 A; V
CB
=
−20
V;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
h
FE
V
CEsat
V
BE
C
c
f
T
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
Min
-
-
-
[1]
Typ
-
-
-
-
-
-
-
-
-
-
5
-
Max
−100
−5
−100
600
250
400
600
-
−700
−1.2
-
-
Unit
nA
μA
nA
I
C
= 0 A; V
EB
=
−5
V
I
C
=
−100
mA; V
CE
=
−1
V
100
100
160
250
I
C
=
−500
mA; V
CE
=
−1
V
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−1
V
I
E
= i
e
= 0 A; V
CB
=
−10
V;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
[1]
[1]
40
-
-
-
80
mV
V
pF
MHz
[2]
[1]
[2]
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
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