Ordering Information .................................................................................................................................................................... 2
User Programming Interface ..................................................................................................................................... 18
Start-up output frequency and signaling types ........................................................................................................... 18
Any-frequency function ............................................................................................................................................. 19
C/SPI Control Registers...................................................................................................................................................... 28
9 I
Register Address: 0x00. DCO Frequency Control Least Significant Word (LSW) .................................................... 28
Register Address: 0x01. OE Control, DCO Frequency Control Most Significant Word (MSW) ................................. 29
Register Address: 0x02. DCO PULL RANGE CONTROL ........................................................................................ 29
Register Address: 0x03. Frac-N PLL Feedback Divider Integer Value and Frac-N PLL Feedback Divider Fraction
Value MSW ............................................................................................................................................................... 30
Register Address: 0x05. Forward Divider, Driver Control ......................................................................................... 30
Register Address: 0x06. Driver Divider, Driver Control ............................................................................................. 31
2
C Operation ........................................................................................................................................................................ 32
10 I
I
2
C protocol ............................................................................................................................................................... 32
I
2
C Timing Specification ............................................................................................................................................ 35
I
2
C Device Address Modes ....................................................................................................................................... 36
Dimensions and Patterns ........................................................................................................................................................... 43
Additional Information ................................................................................................................................................................ 44
Revision History ......................................................................................................................................................................... 45
Rev 1.01
Page 3 of 45
www.sitime.com
SiT3521
1 to 340 MHz Elite Platform I2C/SPI Programmable Oscillator
1 Electrical Characteristics
All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with
standard output terminations shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL
Parameter
Output Frequency Range
Symbol
f
Min.
1
Typ.
–
–
–
–
–
±1
–
–
–
Max.
340
Unit
MHz
Condition
Factory or user programmable, accurate to 6 decimal places
Frequency Range
Frequency Stability
Frequency Stability
F_stab
-10
-20
-25
-50
First Year Aging
F_1y
–
+10
+20
+25
+50
–
ppm
ppm
ppm
ppm
ppm
°C
°C
°C
1
st
-year aging at 25°C
Inclusive of initial tolerance, operating temperature, rated
power supply voltage and load variations.
Temperature Range
Operating Temperature Range
T_use
-20
-40
-40
+70
+85
+105
Supply Voltage
Supply Voltage
Vdd
2.97
2.7
2.52
2.25
3.3
3.0
2.8
2.5
–
–
100
–
–
–
3.63
3.3
3.08
2.75
–
30%
–
V
V
V
V
Extended Commercial
Industrial
Extended Industrial. Available only for I
2
C operation, not SPI.
Input Characteristics – OE Pin
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
VIH
VIL
Z_in
70%
–
–
Vdd
Vdd
kΩ
OE pin
OE pin
OE pin, logic high or logic low
Output Characteristics
Duty Cycle
DC
45
–
–
55
%
Startup and Output Enable/Disable Timing
Start-up Time
Output Enable/Disable Time –
Hardware control via OE pin
Output Enable/Disable Time –
Software control via I
2
C/SPI
T_start
T_oe_hw
3.0
3.8
ms
µs
Measured from the time Vdd reaches its rated minimum value
Measured from the time OE pin reaches rated VIH and VIL to
the time clock pins reach 90% of swing and high-Z.
See
Figure 9
and
Figure 10
Measured from the time the last byte of command is
transmitted via I
2
C/SPI (reg1) to the time clock pins reach 90%
of swing and high-Z. See
Figure 30
and
Figure 31
T_oe_sw
–
–
6.5
µs
Rev 1.01
Page 4 of 45
www.sitime.com
SiT3521
1 to 340 MHz Elite Platform I2C/SPI Programmable Oscillator
Table 2. Electrical Characteristics – LVPECL Specific
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Current Consumption
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Maximum Output Current
Idd
I_OE
I_leak
I_driver
–
–
–
–
–
–
0.15
–
89
58
–
32
mA
mA
A
mA
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE = Low
OE = Low
Maximum average current drawn from OUT+ or OUT-
Output Characteristics
Output High Voltage
Output Low Voltage
Output Differential Voltage Swing
Rise/Fall Time
VOH
VOL
V_Swing
Tr, Tf
Vdd - 1.1V
Vdd - 1.9V
1.2
–
–
–
1.6
225
Vdd - 0.7V
Vdd - 1.5V
2.0
290
Jitter
RMS Phase Jitter (random) –
DCO Mode Only
T_phj
–
–
RMS Phase Jitter (random) –
Any-frequency Mode Only
T_phj
–
–
RMS Period Jitter
[3]
Note:
3. Measured according to JESD65B.
T_jitt
–
0.225
0.1
0.225
0.11
1
0.340
0.14
0.340
0.15
1.6
ps
ps
ps
ps
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels
f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, all Vdd levels
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels
f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, all Vdd levels
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
V
V
V
ps
See
Figure 5
See
Figure 5
See
Figure 6
20% to 80%, see
Figure 6
Table 3. Electrical Characteristics – LVDS Specific
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Current Consumption
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Idd
I_OE
I_leak
–
–
–
–
–
0.15
80
61
–
mA
mA
A
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE = Low
OE = Low
Output Characteristics
Differential Output Voltage
Delta VOD
Offset Voltage
Delta VOS
Rise/Fall Time
VOD
ΔVOD
VOS
ΔVOS
Tr, Tf
250
–
1.125
–
–
–
–
–
–
400
455
50
1.375
50
470
Jitter
RMS Phase Jitter (random) –
DCO Mode Only
T_phj
–
–
RMS Phase Jitter (random) –
Any-frequency Mode Only
T_phj
–
–
RMS Period Jitter
[4]
Note:
4. Measured according to JESD65B.
T_jitt
–
0.21
0.1
0.21
0.1
1
0.275
0.12
0.367
0.12
1.6
ps
ps
ps
ps
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels
f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, all Vdd levels
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels
f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, all Vdd levels
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
mV
mV
V
mV
ps
f = 156.25MHz See
Figure 7
See
Figure 7
See
Figure 7
See
Figure 7
Measured with 2 pF capacitive loading to GND, 20% to 80%,
随着人类对人工智能研究的不断深入， AI 已然成为当下智能产品研发的主流趋势。但是手机行业出现了一个怪现象，即三类“跟风式” AI ：即算力无本质提升的包装式 AI 、功能无实质落地的炒作式AI、缺乏生态建设的封闭式AI。下面就随嵌入式小编一起来了解一下相关内容吧。 未来真正的AI手机应该能够在各个领域缩短我们跟专家的差距。而AI荣耀手机核心战略就是人脑协处理器，缩短普通人与专家距离。...[详细]
在电子制造业领域影响力广泛的专业精品展会——第二十八届中国国际电子生产设备暨微电子工业展(NEPCON China 2018)于2018年4月24日在上海世博展览馆盛大开幕。 作为行业久富盛誉的品质强展，NEPCON China 2018依托国内外电子制造领域前沿技术，全面覆盖SMT表面贴装、测试测量、焊接与点胶喷涂、电子新材料、智慧工厂等各环节革新设备、材料和系统集成方案，联手FUJI、P...[详细]
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
