14-Pin SO (derate 8.33mW/°C above +70°C)..............667mW
Operating Temperature Range ...........................-40°C to +85°C
MAX4250AAUK .............................................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= 5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
connected to V
DD
/2,
SHDN
= V
DD
, T
A
= T
MIN
to T
MAX
, unless otherwise noted.
Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Supply Voltage Range
SYMBOL
V
DD
(Note 4)
V
DD
= 3V
Quiescent Supply Current Per
Amplifier
Normal
mode
V
DD
= 5V
E temperature
MAX4250AAUK
420
0.5
±0.07
0.3
T
A
= +25°C
Input Bias Current
I
B
(Note 6)
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
T
A
= +25°C
Input Offset Current
Differential Input Resistance
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
I
OS
R
IN
V
CM
CMRR
Guaranteed by
CMRR test
V
SS
- 0.2V
≤
V
CM
≤
V
DD
- 1.1V
E temperature
MAX4250AAUK
E temperature
MAX4250AAUK
-0.2
0
70
68
115
(Note 6)
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
1000
V
DD
-1.1
V
DD
-1.1
0.1
0.1
1
50
1500
1
10
100
G
V
dB
pA
pA
CONDITIONS
MIN
2.4
400
420
575
675
655
1.5
±0.75
±1.85
mV
µV/°C
µA
TYP
MAX
5.5
UNITS
V
I
Q
V
DD
= 5V, UCSP only
Shutdown mode (SHDN = V
SS
) (Note 2)
E temperature
MAX4250AAUK
Input Offset Voltage (Note 5)
Input Offset Voltage Tempco
V
OS
TCV
OS
2
Maxim Integrated
MAX4249–MAX4257
UCSP, Single-Supply, Low-Noise,
Low-Distortion, Rail-to-Rail Op Amps
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
connected to V
DD
/2,
SHDN
= V
DD
, T
A
= T
MIN
to T
MAX
, unless otherwise noted.
Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Power-Supply Rejection Ratio
SYMBOL
PSRR
CONDITIONS
V
DD
– 2.4V to 5.5V
R
L
= 10k to V
DD
/2;
V
OUT
= 25mV to V
DD
– 4.97V
R
L
= 1k to V
DD
/2;
V
OUT
= 150V to V
DD
– 4.75V
|V
IN+
- V
IN-
|
≥
10mV;
R
L
= 10k to V
DD
/2
E temperature
MAX4250AAUK
E temperature
MAX4250AAUK
E temperature
MAX4250AAUK
V
DD
- V
OH
V
OL
- V
SS
V
DD
- V
OH
V
OL
- V
SS
E
A
E
A
E
A
E
A
68
Shutdown mode (SHDN = V
SS
),
V
OUT
= V
SS
to V
DD
(Note 2)
(Note 2)
(Note 2)
SHDN
= V
SS
= V
DD
(Note 2)
0.8
X
V
DD
0.5
11
GBW
MAX4250–MAX4254
MAX4249/MAX4255/MAX4256/MAX4257
MAX4250–MAX4254
MAX4249/MAX4255/MAX4256/MAX4257
f = 0.1Hz to 10Hz
f = 10Hz
Input Voltage-Noise Density
Input Current-Noise Density
e
n
i
n
f = 1kHz
f = 30kHz
f = 1kHz
3
22
0.3
2.1
760
27
8.9
7.9
0.5
fA/√Hz
nV/√Hz
1.5
0.001
1.0
0.2
X
V
DD
47
77
MIN
75
72
80
77
80
77
8
7
25
30
20
25
200
225
100
125
mA
µA
V
V
µA
pF
MHz
mV
112
116
dB
TYP
100
MAX
UNITS
dB
Large-Signal Voltage Gain
A
V
Output Voltage Swing
V
OUT
mV
Output Voltage Swing
V
OUT
|V
IN+
- V
IN-
|
≥
10mV,
R
L
= 1k to V
DD
/2
Output Short-Circuit Current
Output Leakage Current
SHDN
Logic Low
SHDN
Logic High
SHDN
Input Current
Input Capacitance
Gain-Bandwidth Product
I
SC
I
LEAK
V
IL
V
IH
I
IL
/I
IH
Slew Rate
Peak-to-Peak Input-Noise
Voltage
SR
e
nP-P
V/µs
nV
P-P
Maxim Integrated
3
MAX4249–MAX4257
UCSP, Single-Supply, Low-Noise,
Low-Distortion, Rail-to-Rail Op Amps
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
connected to V
DD
/2,
SHDN
= V
DD
, T
A
= T
MIN
to T
MAX
, unless otherwise noted.
Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MAX4250–MAX4254
A
V
= 1V/V, V
OUT
= 2V
P-P
,
R
L
= 1k to GND
(Note 7)
MAX4249/MAX4255/
MAX4256/MAX4257
A
V
= 1V/V, V
OUT
= 2V
P-P
,
R
L
= 1k to GND (Note 7)
No sustained oscillations
MAX4250–MAX4254, A
V
= 1V/V
Gain Margin
GM
MAX4249/MAX4255/MAX4256/MAX4257,
A
V
= 10V/V
MAX4250–MAX4254, A
V
= 1V/V
Phase Margin
ΦM
MAX4249/MAX4255/MAX4256/MAX4257,
A
V
= 10V/V
To 0.01%, V
OUT
= 2V step
I
VDD
= 5% of
normal
operation
V
OUT
= 2.5V,
V
OUT
settles to
0.1%
MAX4250–MAX4254
MAX4249/MAX4255/
MAX4256/MAX4257
MAX4251/MAX4253
MAX4249/MAX4256
MAX4251/MAX4253
MAX4249/MAX4256
f = 1kHz
f = 20kHz
f = 1kHz
f = 20kHz
MIN
TYP
0.0004
0.006
%
0.0012
0.007
400
10
12.5
74
68
6.7
1.6
0.8
1.2
8
3.5
6
µs
µs
µs
Degrees
dB
pF
MAX
UNITS
Total Harmonic Distortion Plus
Noise
THD+N
Capacitive-Load Stability
Settling Time
Delay Time to Shutdown
t
SH
Delay Time to Enable
Power-Up Delay Time
t
EN
t
PU
µs
V
DD
= 0 to 5V step, V
OUT
stable to 0.1%
Note 2:
SHDN
is available on the MAX4249/MAX4251/MAX4253/MAX4256 only.
Note 3:
All device specifications are 100% tested at T
A
= +25°C. Limits over temperature are guaranteed by design.
Note 4:
Guaranteed by the PSRR test.
Note 5:
Offset voltage prior to reflow on the UCSP.
Note 6:
Guaranteed by design.
Note 7:
Lowpass-filter bandwidth is 22kHz for f = 1kHz and 80kHz for f = 20kHz. Noise floor of test equipment = 10nV/!Hz.
4
Maxim Integrated
MAX4249–MAX4257
UCSP, Single-Supply, Low-Noise,
Low-Distortion, Rail-to-Rail Op Amps
Typical Operating Characteristics
(V
DD
= 5V, V
SS
= 0V, V
CM
= V
OUT
= V
DD
/2, input noise floor of test equipment =10nV/!Hz for all distortion measurements,
国际半导体设备材料产业协会（SEMI）昨（10）日公布半导体设备资本支出的年中预测报告（SEMI Capital Equipment Forecast），预估2012年全球半导体设备营收规模将达到423.8亿美元，2013年将成长至467.1亿美元。
受惠平板电脑、智慧型手机与行动装置等消费性电子商品亮丽表现，半导体设备的采购需求仍将持续。SEMI在报告中指出，2011年半...[详细]
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
