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MT46H8M16LFCF-75 IT

产品描述IC ddr sdram 128mbit 60vfbga
产品类别存储   
文件大小3MB,共66页
制造商Micron(美光)
官网地址http://www.micron.com/
标准  
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MT46H8M16LFCF-75 IT概述

IC ddr sdram 128mbit 60vfbga

MT46H8M16LFCF-75 IT规格参数

参数名称属性值
Datasheets
MT46H8M16LF
Product Photos
60 FBGA Package
Standard Package1,000
CategoryIntegrated Circuits (ICs)
FamilyMemory
系列
Packaging
Tray
Format - MemoryRAM
Memory TypeMobile LPDDR SDRAM
Memory Size128M (8M x 16)
速度
Speed
133MHz
InterfaceParallel
Voltage - Supply1.7 V ~ 1.9 V
Operating Temperature-40°C ~ 85°C
封装 / 箱体
Package / Case
60-VFBGA
Supplier Device Package60-VFBGA (8x10)

文档预览

下载PDF文档
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Features
Mobile DDR SDRAM
MT46H8M16LF – 2 Meg x 16 x 4 Banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com
Features
• V
DD
/V
DD
Q = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data–one mask
per byte
• Programmable burst lengths: 2, 4, or 8
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Selectable output drive (DS)
• Clock stop capability
Figure 1:
60-Ball VFBGA Assignment
(Top View)
1
2
3
4
5
6
7
8
9
A
V
SS
DQ15
V
SS
Q
V
DD
Q
DQ0
V
DD
B
V
DD
Q
DQ13
DQ14
DQ1
DQ2
V
SS
Q
C
V
SS
Q
DQ11
DQ12
DQ3
DQ4
V
DD
Q
D
V
DD
Q
DQ9
DQ10
DQ5
DQ6
TEST
1
E
V
SS
Q
UDQS
DQ8
DQ7
LDQS
V
DD
Q
F
V
SS
UDM
NC
NC
LDM
V
DD
G
CKE
CK
CK#
WE#
CAS#
RAS#
H
A9
A11
NC
CS#
BA0
BA1
J
A6
A7
A8
A10/AP
A0
A1
K
V
SS
A4
A5
A2
A3
V
DD
Options
• V
DD
/V
DD
Q
• 1.8V/1.8V
• Configuration
• 8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic package
• 60-Ball VFBGA (lead-free)
8mm x 10mm
• Timing – cycle time
• 7.5ns @ CL = 3
• 10ns @ CL = 3
• Operating temperature range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
H
Notes:1.D9 should be connected to V
SS
or V
SS
Q in
normal operations.
Table 1:
8M16
CF
Configuration Addressing
8 Meg x 16
2 Meg x 16 x 4
4K
4K (A0–A11)
4 (BA0, BA1)
512K (A0–A8)
Architecture
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
-75
-10
None
IT
Table 2:
Speed
Grade
Key Timing Parameters
Clock Rate
CL = 2
CL = 3
Access Time
CL = 2
CL = 3
-75
-10
83 MHz
67 MHz
133 MHz
104 MHz
6.5ns
7.0ns
6.0ns
7.0ns
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.

MT46H8M16LFCF-75 IT相似产品对比

MT46H8M16LFCF-75 IT MT46H8M16LFCF-75 MT46H8M16LFCF-75 TR MT46H8M16LFCF-75 IT TR
描述 IC ddr sdram 128mbit 60vfbga IC ddr sdram 128mbit 60vfbga IC ddr sdram 128mbit 60vfbga IC ddr sdram 128mbit 60vfbga
Standard Package 1,000 1,000 1 1
Category Integrated Circuits (ICs) Integrated Circuits (ICs) Integrated Circuits (ICs) Integrated Circuits (ICs)
Family Memory Memory Memory Memory
系列
Packaging
Tray Tray Digi-Reel® Digi-Reel®
Format - Memory RAM RAM RAM RAM
Memory Type Mobile LPDDR SDRAM Mobile LPDDR SDRAM Mobile LPDDR SDRAM Mobile LPDDR SDRAM
Memory Size 128M (8M x 16) 128M (8M x 16) 128M (8M x 16) 128M (8M x 16)
速度
Speed
133MHz 133MHz 133MHz 133MHz
Interface Parallel Parallel Parallel Parallel
Voltage - Supply 1.7 V ~ 1.9 V 1.7 V ~ 1.9 V 1.7 V ~ 1.9 V 1.7 V ~ 1.9 V
Operating Temperature -40°C ~ 85°C 0°C ~ 70°C 0°C ~ 70°C -40°C ~ 85°C
封装 / 箱体
Package / Case
60-VFBGA 60-VFBGA 60-VFBGA 60-VFBGA
Supplier Device Package 60-VFBGA (8x10) 60-VFBGA (8x10) 60-VFBGA (8x10) 60-VFBGA (8x10)

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