Freescale Semiconductor
Technical Data
Document Number: MHW9188N
Rev. 4, 4/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
Specified for 79 - , 112 - and 132 - Channel Loading
•
Excellent Distortion Performance
•
Higher Output Capability
•
Built - in Input Diode Protection
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
Applications
•
CATV Systems Operating in the 40 to 870 MHz Frequency Range
•
Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
•
Replaced MHW9188. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
MHW9188N
870 MHz
20.3 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Value
+75
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
300
2
Output Value
300
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
870 MHz
40 - 870 MHz
Symbol
BW
G
p
S
G
F
IRL
40 - 500 MHz
501 - 750 MHz
751 - 870 MHz
ORL
40 - 160 MHz
f > 160 MHz
20
18
—
—
—
—
20
18
16
—
—
—
—
—
—
dB
Min
40
19.7
0
—
Typ
—
20.3
0.5
—
Max
870
20.9
1.0
0.5
Unit
MHz
dB
dB
dB
dB
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW9188N
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Cross Modulation Distortion @ Ch 2
(V
out
= +48 dBmV/ch., FM = 55 MHz)
(V
out
= +48 dBmV/ch., FM = 55 MHz)
(V
out
= +48 dBmV/ch., FM = 55 MHz)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Composite Triple Beat
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Noise Figure
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
50 MHz
550 MHz
750 MHz
870 MHz
Symbol
CSO
132
CSO
112
CSO
79
CSO
112
CSO
112
CSO
112
CSO
79
CSO
79
CSO
79
XMD
132
XMD
112
XMD
79
XMD
112
XMD
112
XMD
112
XMD
79
XMD
79
XMD
79
CTB
132
CTB
112
CTB
79
CTB
112
CTB
112
CTB
112
CTB
79
CTB
79
CTB
79
NF
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
410
Typ
- 64
- 66
- 70
- 65
- 64
- 63
- 69
- 74
- 73
- 57
- 59
- 62
- 53
- 55
- 58
- 60
- 62
- 67
- 58
- 62
–68
- 60
- 61
- 64
- 66
- 71
- 74
4.0
4.0
4.0
4.0
425
Max
- 62
- 64
- 68
- 63
- 62
- 61
- 67
- 72
- 71
dBc
- 55
- 57
- 60
- 51
- 53
- 56
- 47
- 60
- 65
dBc
- 56
- 60
- 66
- 58
- 59
- 62
- 64
- 69
- 72
4.5
4.5
4.5
4.5
440
dB
Unit
dBc
ARCHIVE INFORMATION
DC Current (V
DC
= 24 V, T
C
= 45°C)
I
DC
mA
MHW9188N
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
A
Z
J
A
S
B
V
R
Q
0.010
M
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
INCHES
MIN
MAX
−−− 1.775
−−− 1.085
−−− 0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−− 0.600
1.500 BSC
0.200 BSC
−−− 0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−− 15.24
38.100 BSC
5.080 BSC
−−− 6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
2X
T F
M
A
M
F
F
L
2X
2X
6−32UNC−2B
U
0.010
E
M
Z T A
M
ARCHIVE INFORMATION
1 2
3
5
7 8 9
N
C
E
K
Z
W
X
T
2X
4X
G
7X
D
M
P
X
T A
M
Y
M
0.020
X
0.010
M
Z T A
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
CASE 1302 - 01
ISSUE E
MHW9188N
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
ARCHIVE INFORMATION
Home Page:
www.freescale.com
E - mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
©
Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHW9188N
Document Number: MHW9188N
4
Rev. 4, 4/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
How to Reach Us:
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
