Freescale Semiconductor
Technical Data
Document Number: MHW9186AN
Rev. 3, 5/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
Specified for 79 - , 112 - and 132 - Channel Loading
•
Excellent Distortion Performance
•
Built - in Input Diode Protection
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
•
Improved Ruggedness
Applications
•
CATV Systems Operating in the 40 to 870 MHz Frequency Range
•
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module
•
Replaced MHW9186A. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
MHW9186AN
870 MHz
18.5 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Value
+65
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
300
2
Output Value
300
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
40 - 200 MHz
200 - 600 MHz
600 - 870 MHz
ORL
40 - 200 MHz
200 - 600 MHz
600 - 870 MHz
20
19
18
—
—
—
—
—
—
870 MHz
40 - 870 MHz
Symbol
BW
G
p
S
G
F
IRL
20
19
18
—
—
—
—
—
—
dB
Min
40
18
0.1
—
Typ
—
18.5
0.6
0.3
Max
870
19.5
1.2
0.8
Unit
MHz
dB
dB
dB
dB
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW9186AN
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(V
out
= +44 dBmV/ch., FM = 55 MHz)
(V
out
= +46 dBmV/ch., FM = 55 MHz)
(V
out
= +48 dBmV/ch., FM = 55 MHz)
Composite Triple Beat
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
Noise Figure
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
50 MHz
870 MHz
Symbol
CSO
132
CSO
112
CSO
79
XMD
132
XMD
112
XMD
79
CTB
132
CTB
112
CTB
79
NF
I
DC
Min
—
—
—
—
—
—
—
—
—
—
—
230
Typ
- 67
- 65
- 72
- 58
- 58
- 58
- 62
- 61
- 64
4.6
3.7
250
Max
- 60
- 61
- 64
dBc
- 52
- 52
- 52
dBc
- 58
- 58
- 60
6.0
6.0
265
dB
mA
Unit
dBc
ARCHIVE INFORMATION
DC Current (V
DC
= 24 V, T
C
= - 20° to +100°C)
MHW9186AN
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHW9186AN
Document Number: MHW9186AN
4
Rev. 3, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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