Freescale Semiconductor
Technical Data
Document Number: MHW9146N
Rev. 4, 5/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
Specified for 79 - , 112 - and 132 - Channel Loading
•
Excellent Distortion Performance
•
Built - in Input Diode Protection
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
Applications
•
CATV Systems Operating in the 40 to 870 MHz Frequency Range
•
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module
•
Replaced MHW9146. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
MHW9146N
870 MHz
14.3 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
Value
+65
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
200
2
Output Value
200
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
870 MHz
40 - 870 MHz
Symbol
BW
G
p
S
G
F
IRL
40 - 500 MHz
f > 501 MHz
ORL
40 - 160 MHz
f > 160 MHz
20
18
—
—
—
—
20
18
—
—
—
—
dB
Min
40
13.8
0
—
Typ
—
14.3
0.4
—
Max
870
14.8
1.0
0.5
Unit
MHz
dB
dB
dB
dB
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW9146N
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(V
out
= +48 dBmV/ch., FM = 55.25 MHz )
(V
out
= +46 dBmV/ch., FM = 55.25 MHz)
(V
out
= +44 dBmV/ch., FM = 55.25 MHz)
Composite Triple Beat
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
Noise Figure
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
550 MHz
750 MHz
870 MHz
Symbol
CSO
79
CSO
112
CSO
132
XMD
79
XMD
112
XMD
132
CTB
79
CTB
112
CTB
132
NF
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
230
Typ
- 68
- 63
- 63
- 60
- 60
- 60
- 64
- 64
- 64
4.4
3.8
4.0
4.3
245
Max
- 64
- 60
- 60
dBc
- 55
- 55
- 55
dBc
- 60
- 60
- 60
5.5
—
—
5.5
260
dB
Unit
dBc
ARCHIVE INFORMATION
DC Current (V
DC
= 24 V, T
C
= 45°C)
I
DC
mA
Note: This device requires an external 0.01
μF
DC blocking capacitor connected to the output pin (Pin 9) as indicated in Figure 1.
PIN CONFIGURATION
1 2 3 4 5 6 7 8 9
INPUT
0.01
μF
0.01
μF
V
CC
OUTPUT
Figure 1. External Connections
MHW9146N
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHW9146N
Document Number: MHW9146N
4
Rev. 4, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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