NVTFS6H850NL
Power MOSFET
Features
80 V, 8.6 mW, 64 A, Single N−Channel
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS6H850NLWF
−
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
80 V
Value
80
±20
64
45
Unit
V
V
A
R
DS(on)
MAX
8.6 mW @ 10 V
11 mW @ 4.5 V
I
D
MAX
64 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3, 4)
Power Dissipation
R
qJC
(Notes 1, 2, 3)
Continuous Drain
Current R
qJA
(Notes 1, 3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
N−Channel
D (5
−
8)
73
37
14.8
10.4
3.9
1.9
308
−55
to
+175
61
208
260
W
G (4)
S (1, 2, 3)
A
W
1
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
A
°C
A
mJ
°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 3.4 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Case
−
Steady State (Note 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
qJC
R
qJA
Value
2.0
39
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
February, 2019
−
Rev. 0
1
Publication Order Number:
NVTFS6H850NL/D
NVTFS6H850NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
R
DS(on)
V
GS(TH)
V
GS(TH)
/T
J
g
FS
C
iss
C
rss
C
oss
Q
G(TOT)
Q
G(TOT)
Q
GS
Q
GD
t
d(on)
t
d(off)
t
r
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dl/dt = 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 64 V,
I
D
= 10 A, R
G
= 2.5 mW
V
GS
= 4.5 V, V
DS
= 40 V, I
D
= 10 A
V
GS
= 0 V, f = 1.0 MHz
V
DS
= 40 V
V
GS
= 10 V, V
DS
= 40 V, I
D
= 10 A
V
DS
= 8 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
80
44.2
10
250
100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
= 20 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= V
DS
, I
D
= 70
mA
1.2
7.1
8.9
1.6
−5.2
64.1
8.6
11
2.0
mW
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
V
mV/°C
S
1450
10
182
26
13
4.0
4.2
pF
pF
pF
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
Fall Time
9
21
26
5
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.8
0.7
37
22
15
40
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS6H850NL
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
0
1
2
3
4
5
6
7
2.6 V
2.4 V
8
2.8 V
3.0 V
I
D
, DRAIN CURRENT (A)
70
V
DS
= 10 V
60
50
40
30
20
10
0
T
J
= 125°C
0
0.5
1.0
1.5
2.0
T
J
=
−55°C
2.5
3.0
3.5
4.0
T
J
= 25°C
V
GS
= 3.4 V to 10 V
3.2 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
24
22
20
18
16
14
12
10
8
6
4
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
I
D
= 10 A
10
Figure 2. Transfer Characteristics
T
J
= 25°C
9
8
7
6
5
V
GS
= 10 V
V
GS
= 4.5 V
10
15
20
25
30
35
40
45
50
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
V
GS
= 10 V
I
D
= 10 A
I
DSS
, LEAKAGE (nA)
1000
100
10
1
0.1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
2.0
1.5
1.0
T
J
= 25°C
0.01
0.001
5
15
25
35
45
55
65
75
0.5
−50 −25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS6H850NL
TYPICAL CHARACTERISTICS
10,000
C
ISS
C, CAPACITANCE (pF)
1000
C
OSS
10
8
6
4
2
0
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
GS
Q
GD
V
DS
= 40 V
T
J
= 25°C
I
D
= 10 A
10
1
0
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10
20
30
40
50
60
C
RSS
70
80
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
10
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
100
t, TIME (ns)
t
r
10
t
d(off)
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
V
GS
= 4.5 V
V
DS
= 64 V
I
D
= 10 A
100
I
S
, SOURCE CURRENT (A)
1
T
J
= 125°C
0.3
0.4
0.5
T
J
= 25°C
0.6
0.7
0.8
T
J
=
−55°C
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
10
10
I
PEAK
, (A)
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
T
J
(initial) = 25°C
100
1
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10
ms
0.5 ms
10 ms
100
T
J
(initial) = 100°C
1 ms
0.1
1000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Curent vs. Time in
Avalanche
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4
NVTFS6H850NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
1
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVTFS6H850NLTAG
NVTFS6H850NLWFTAG
Marking
850L
50LW
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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