The UT54ACS14E and the UT54ACTS14E are hex inverters
with schmitt trigger inputs. The circuits perform the Boolean
function Y = A.
The devices are characterized over full military temperature
range of -55°C to +125°C.
•
0.6μm
CRH CMOS Process
•
•
•
•
•
•
•
- Latchup immune
High speed
Low power consumption
Wide power supply operating range of 3.0V to 5.5V
Available QML Q or V processes
14-lead flatpack
UT54ACS14E - SMD 5962-96524
UT54ACTS14E - SMD 5962-96525
PINOUTS
14-Lead Flatpack
Top View
A1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
FUNCTION TABLE
INPUT
A
H
L
OUTPUT
Y
L
H
Y1
A2
Y2
A3
Y3
V
SS
LOGIC DIAGRAM
LOGIC SYMBOL
A1
A2
A3
A4
A5
A6
(1)
(3)
(5)
(9)
(11)
(13)
1
(2)
(4)
(6)
(8)
(10)
(12)
Y1
Y2
Y3
Y4
Y5
Y6
A4
Y4
A3
Y3
A2
Y2
A1
Y1
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
A5
Y5
A6
Y6
1
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
108
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum package power dissipation
permitted @ Tc = +125
o
C
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, P
D
= (T
j(max)
- T
c(max)
) /
Θ
jc
LIMIT
-0.3 to 6.0
-0.3 to V
DD
+ 0.3
-65 to +150
+175
+300
15
±10
3.3
UNITS
V
V
°C
°C
°C
°C/W
mA
W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to +125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS14E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
T+
V
T-
V
H1
V
H2
I
IN
V
OL
DESCRIPTION
Schmitt trigger positive-going
threshold
1
Schmitt trigger negative-going
threshold
1
Range of hysteresis (V
T+
- V
T-
)
Range of hysteresis (V
T+
- V
T-
)
Input leakage current
Low-level output voltage
3
CONDITION
V
DD
from 3.0V to 5.5V
V
DD
from 3.0V to 5.5V
V
DD
from 4.5V to 5.5V
V
DD
from 3.0V to 3.6V
V
IN
= V
DD
or V
SS
I
OL
= 100μA
V
DD
from 3.0V to 5.5V
V
OH
High-level output voltage
3
I
OH
= -100μA
V
DD
from 3.0V to 5.5V
I
OS1
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 4.5V to 5.5V
I
OS2
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 3.0V to 3.6V
I
OL1
Low level output current
9
(sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 4.5V to 5.5V
I
OL2
Low level output current
9
(sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 3.0V to 3.6V
I
OH1
High level output current
9
(source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
from 4.5V to 5.5V
I
OH2
High level output current
9
(source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
from 3.0V to 3.6V
-6
mA
-8
mA
6
mA
8
mA
-100
100
mA
-200
200
mA
V
DD
- 0.25
V
0.3V
DD
0.6
0.3
-1
1.5
1.2
1
0.25
MIN
MAX
0.7V
DD
UNIT
V
V
V
V
μA
V
3
P
total1
P
total2
Power dissipation
2, 8
Power dissipation
2, 8
C
L
= 50pF
V
DD
from 4.5V to 5.5V
C
L
= 50pF
V
DD
from 3.0V to 3.6V
1.9
mW/
MHz
mW/
MHz
μA
0.76
I
DDQ
Quiescent Supply Current
V
IN
= V
DD
or V
SS
V
DD
from 3.0V to 5.5V
ƒ
= 1MHz, V
DD
= 0
ƒ
= 1MHz, V
DD
= 0
10
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
15
15
pF
pF
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019.
8. Power dissipation specified per switching output.
9. Guaranteed by characterization, but not tested.
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
