4X4 STANDARD SRAM, 45ns, CDIP16, CERAMIC, DIP-16
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP16,.3 |
| 针数 | 16 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 45 ns |
| JESD-30 代码 | R-GDIP-T16 |
| 长度 | 19.43 mm |
| 内存密度 | 16 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 16 |
| 字数 | 4 words |
| 字数代码 | 4 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4X4 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP16,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | TTL |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 54LS670DMQB | DM54LS670W/883 | 54LS670FMQB | 54LS670LMQB | DBP-M999LF-03-1963-BF | DM74LS670M | DM74LS670N | |
|---|---|---|---|---|---|---|---|
| 描述 | 4X4 STANDARD SRAM, 45ns, CDIP16, CERAMIC, DIP-16 | 4X4 STANDARD SRAM, 45ns, CDFP16, CERAMIC, FP-16 | 4X4 STANDARD SRAM, 45ns, CDFP16, CERAMIC, FP-16 | 4X4 STANDARD SRAM, 45ns, CQCC20, CERAMIC, LCC-20 | Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.2W, 196000ohm, 100V, 0.1% +/-Tol, -25,25ppm/Cel, 8726, | 4X4 STANDARD SRAM, 45ns, PDSO16, 0.150 INCH, PLASTIC, SOIC-16 | 4X4 STANDARD SRAM, 45ns, PDIP16, PLASTIC, DIP-16 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | compliant | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 | EAR99 |
| 端子数量 | 16 | 16 | 16 | 20 | 16 | 16 | 16 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 150 °C | 70 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR PACKAGE | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | FLATPACK | CHIP CARRIER | DIP | SMALL OUTLINE | IN-LINE |
| 技术 | TTL | TTL | TTL | TTL | TANTALUM NITRIDE/NICKEL CHROME | TTL | TTL |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 零件包装代码 | DIP | DFP | DFP | QLCC | - | SOIC | DIP |
| 包装说明 | DIP, DIP16,.3 | DFP, FL16,.3 | DFP, FL16,.3 | QCCN, LCC20,.35SQ | - | SOP, SOP16,.25 | DIP, DIP16,.3 |
| 针数 | 16 | 16 | 16 | 20 | - | 16 | 16 |
| 最长访问时间 | 45 ns | 45 ns | 45 ns | 45 ns | - | 45 ns | 45 ns |
| JESD-30 代码 | R-GDIP-T16 | R-GDFP-F16 | R-GDFP-F16 | S-CQCC-N20 | - | R-PDSO-G16 | R-PDIP-T16 |
| 长度 | 19.43 mm | 9.6645 mm | 9.6645 mm | 8.89 mm | - | 9.9 mm | 21.755 mm |
| 内存密度 | 16 bit | 16 bit | 16 bit | 16 bit | - | 16 bit | 16 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | - | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | - | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 字数 | 4 words | 4 words | 4 words | 4 words | - | 4 words | 4 words |
| 字数代码 | 4 | 4 | 4 | 4 | - | 4 | 4 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| 组织 | 4X4 | 4X4 | 4X4 | 4X4 | - | 4X4 | 4X4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | - | YES | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DFP | DFP | QCCN | - | SOP | DIP |
| 封装等效代码 | DIP16,.3 | FL16,.3 | FL16,.3 | LCC20,.35SQ | - | SOP16,.25 | DIP16,.3 |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | - | - |
| 座面最大高度 | 5.08 mm | 2.032 mm | 2.032 mm | 1.905 mm | - | 1.75 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | - | YES | NO |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | - | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | FLAT | FLAT | NO LEAD | - | GULL WING | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | - | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | - | DUAL | DUAL |
| 宽度 | 7.62 mm | 6.604 mm | 6.604 mm | 8.89 mm | - | 3.9 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
| 是否Rohs认证 | - | 不符合 | - | - | 符合 | 不符合 | 不符合 |
| JESD-609代码 | - | e0 | - | - | e3 | e0 | e0 |
| 端子面层 | - | Tin/Lead (Sn/Pb) | - | - | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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