6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
PACKAGE
1
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
SCHEMATIC
NC
6
2
5
6
1
6
3
NC
4
1
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
6
1
FEATURES
The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual-in-
line package.
•
•
•
•
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
Narrow (CTR) Windows that Translate to a Narrow and Predictable Open Loop Gain Window
Very Low Coupled Capacitance along with No Chip to Pin 6 Base Connection for Minimum Noise Susceptibility
To order devices that are tested and marked per VDE 0884 requirements, the suffix “.300” must be included at the end
of part number. e.g. MOC8101.300 VDE 0884 is a test option.
APPLICATIONS
• Switchmode Power Supplies (Feedback Control)
• AC Line/Digital Logic Isolation
• Interfacing and coupling systems of different potentials and impedances
© 2004 Fairchild Semiconductor Corporation
Page 1 of 12
1/21/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
Parameter
INPUT LED
Forward Current - Continuous
Forward Current - Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
OUTPUT TRANSISTOR
Collector-Emitter Voltage
MOC8106/7/8, CNY17F-1/2/3/4
MOC8101/2/3/4/5
Emitter-Collector Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16” from case, 10 sec. duration)
V
ISO
P
D
T
OPR
T
STG
T
SOL
5300
250
3.3
-55 to +100
-55 to +150
260
Vac(rms)
mW
mW/°C
°C
°C
°C
V
CEO
V
ECO
P
D
70
30
7
150
2.0
Volts
Volts
mW
mW/°C
I
F
I
F
(pk)
V
R
P
D
100
1
6
150
2.0
mA
A
Volts
mW
mW/°C
Symbol
Value
Unit
© 2004 Fairchild Semiconductor Corporation
Page 2 of 12
1/21/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
ELECTRICAL CHARACTERISTICS
(T
A
=25°C Unless otherwise specified)
(1)
Characteristic
INPUT LED
Forward Voltage
(I
F
= 60 mA)
(I
F
= 10 mA)
Reverse Leakage Current (V
R
= 5.0 V)
Capacitance
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
MOC8101/2/3/4/5
MOC8106/7/8, CNY17F-1/2/3/4
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
MOC8101
MOC8102
MOC8103
Output Collector Current
(I
F
= 10 mA, V
CE
= 10 V)
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F-1
(I
F
= 10 mA, V
CE
= 5 V)
CNY17F-2
CNY17F-3
CNY17F-4
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4
MOC8101/2/3/4/5/6/7/8
Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at T
A
= 25°C
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 500 µA, I
F
= 5.0 mA)
(f = 60 Hz, t = 1.0 min.)
(4)
(V
I-O
= 500 V)
(4)
(V
I-O
= 0, f = 1.0 MHz)
(4)
V
CE(sat)
V
ISO
R
ISO
C
ISO
—
5300
10
11
—
—
—
—
0.5
0.4
—
—
—
V
Vac(rms)
Ω
pF
(CTR)
(2)
50
73
108
160
65
50
100
250
40
63
100
160
—
—
—
—
—
—
—
—
—
—
—
—
80
117
173
256
133
150
300
600
80
125
200
320
%
(I
C
= 1.0 mA)
(I
C
= 1.0 mA)
(I
E
= 100 µA)
(f = 1.0 MHz, V
CE
= 0)
V
(BR) CEO
V
(BR) ECO
C
CE
30
70
7.0
—
100
100
10
8
—
—
—
—
V
V
pF
(V
CE
= 10 V, T
A
= 25°C)
(V
CE
= 10 V, T
A
= 100°C)
I
CEO1
I
CEO2
—
—
1.0
1.0
50
—
nA
µA
CNY17F-X
MOC810X
I
R
C
V
F
—
1.0
—
—
1.40
1.18
0.001
18
1.65
1.5
10
—
µA
pF
V
Symbol
Min
Typ**
Max
Unit
© 2004 Fairchild Semiconductor Corporation
Page 3 of 12
1/21/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
TRANSFER CHARACTERISTICS
(T
A
=25°C Unless otherwise specified)
AC Characteristic
NON-SATURATED SWITCHING TIME
Turn-on Time CNY17F-1/2/3/4 Only
Turn-off Time CNY17F-1/2/3/4 Only
Turn-On Time
Turn-Off Time
Rise Time
All Devices
Fall Time
All Devices
SATURATED SWITCHING TIMES
Turn-on Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Rise Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Turn-off Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Fall Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
** All typicals at T
A
= 25°C
(I
F
= 20 mA, V
CE
= 0.4 V)
t
on
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
r
(I
F
= 20 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
off
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
f
(I
F
= 10 mA, V
CE
= 0.4 V)
—
—
24
—
—
39
—
—
34
µs
—
—
8.0
—
—
5.5
µs
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(3)
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(3)
MOC8101-5
MOC8106-8
MOC8101-5
MOC8106-8
(R
L
= 100
Ω
, I
C
= 2 mA)
(V
CC
= 10 V)
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(3)
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(3)
t
on
t
off
t
on
t
off
t
r
t
f
—
—
—
—
—
—
2
3
2
3
1
2
10
10
20
—
20
—
—
µs
—
µs
µs
Test Conditions Symbol
Min
Typ**
Max
Unit
—
—
4.0
µs
—
—
20
µs
NOTES:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4, For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
© 2004 Fairchild Semiconductor Corporation
Page 4 of 12
1/21/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.4
Fig. 2 Normalized CTR vs. Forward Current
T
A
= 25°C
V
CE
= 5.0 V
1.2
Normalized to
I
F
= 10 mA
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.0
1.5
T
A
= -55°C
1.4
NORMALIZED CTR
100
0.8
0.6
1.3
1.2
T
A
= 25°C
1.1
T
A
= 100°C
1.0
1
10
0.4
0.2
0.0
0
5
10
15
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.6
1.0
0.9
1.4
I
F
= 5 mA
0.8
Fig. 4 CTR vs. RBE (Saturated)
NORMALIZED CTR
NORMALIZED CTR
1.2
I
F
= 10 mA
1.0
0.7
0.6
0.5
0.4
0.3
I
F
= 20 mA
I
F
= 10 mA
0.8
I
F
= 20 mA
0.6
Normalized to
I
F
= 10 mA
T
A
= 25°C
-50
-25
0
25
50
75
100
125
I
F
= 5 mA
0.2
0.1
0.0
10
100
1000
T
A
= 25°C
V
CE
= 0.3 V
Normalized to CTR @ R
BE
= Open
0.4
-75
T
A
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
© 2004 Fairchild Semiconductor Corporation
Page 5 of 12
1/21/04
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