This product complies with the RoHS Directive (EU 2002/95/EC).
Optoisolators (Photocouplers)
CNC7S101
(ON3181)
Optoisolators
Overview
CNC7S101 is an AC input compatible optoisolator in which two GaAs high output infrared light emitting diode chips are connected in
reverse parallel as light emitting elements, and optically are connected to a high sensitivity Si phototransistor chip as a light detecting element
in a small DIL 4-pin package.
The CNC7S101 have a number of excellent features, including high I/O isolation voltage and current transfer ratio (CTR), as well as high
speed response and high reliability.
Applications
Telephones
Telephone switches
Programmable controllers
AC/DC input modules for measuring
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
*1
Forward current
Input
(Light emitting diode)
Isolation voltage, input to output
*4
Total power dissipation
Storage temperature
Operating ambient temperature
Ma
int
en
Collector power dissipation
*3
an
ce
Collector current
/D
Output
(Photo transistor)
Emitter-collector voltage
(Base open)
on
tin
Collector-emitter voltage
(Base open)
ue
di
Pulse forward current
*2
Pl
Note) *1: Input power derating ratio is 0.75 mW/°C at T
a
≥
25°C
*2: Pulse width
≤
100
μs,
repeat 100 pps
*3: Output power derating ratio is 1.5 mW/°C at T
a
≥
25°C
*4: AC 1 min. RH
<
60%
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Symbol
P
D
I
F
Rating
75
±50
±1
80
7
Unit
mA
A
mW
I
FP
V
CEO
V
ECO
I
C
V
V
50
mA
P
C
P
T
150
200
mW
mW
°C
°C
V
ISO
T
opr
T
stg
5 000
V[rms]
–30 to +100
–55 to +125
Note) The part number in the parenthesis shows conventional part number.
SHF00019AEK
M
ain
Di
sc te
on na
tin nc
ue e/
d
Features
AC input support
High I/O isolation voltage: V
ISO
= 5 000 V[rms] (min.)
Fast response: t
r
= 4
μs,
t
f
= 3
μs
UL listed (UL File No. E79920)
isc
Publication date: October 2008
1
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC7S101
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Input
characteristics Terminal capacitance
Collector-emitter voltage
(Base open)
Emitter-collector voltage
Output
characteristics (Base open)
Collector-emitter cutoff current
(Base open)
Collector-emitter capacitance
DC current transfer ratio
*1, *2
Symbol
V
F
C
t
V
CEO
V
ECO
I
CEO
C
C
Conditions
I
F
=
±50
mA
V
R
= 0 V, f = 1 MHz
I
C
= 100
μA
I
E
= 10
μA
V
CE
= 20 V
80
7
5
3.0
300
0.6
4
3
100
Min
Typ
1.35
35
Max
1.50
Unit
V
pF
V
V
nA
pF
%
pF
W
μs
μs
V
Isolation resistance, input to output
Transfer
characteristics Rise time
*3
Fall time
*4
Collector-emitter saturation voltage
Collector current ratio
*5
V
CE(sat)
I
C(Ratio)
Note) 1. Input and output are practiced by electricity.
3. *1:
I
C
I
F
2. This device is designed by disregarding radiation.
CTR
×
100%
*2: Rank classification
Rank
R
CTR (%)
50 to 150
100 to 300
ce
/D
*3: t
r
: Time required for the collector current to increase from 10% to 90% of its final value
*4: t
f
: Time required for the collector current to decrease from 90% to 10% of its initial value
*5:
I
C1
I
F1
I
C2
(I
F2
= 1 mA, V
CE
= 5 V)
V
CE
I
C(Ratio)
=
I
C2
1
4
I
C1
(I
F1
= 1 mA, V
CE
= 5 V)
I
F2
2
Pl
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R
ISO
t
r
t
f
V
ISO
= 500 V
10
11
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
W
I
F
=
±20
mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 1 mA
0.1
0.2
0.33
1.00
3.00
S
No-rank
20 to 300
2
3
SHF00019AEK
Ma
int
en
an
M
ain
Di
sc te
on na
tin nc
ue e/
d
V
CE
= 10 V, f = 1 MHz
V
CE
= 5 V, I
F
=
±1
mA
f = 1 MHz
CTR
C
ISO
20
Isolation capacitance, input to output
isc
on
tin
ue
di
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC7S101
Collector power dissipation P
C
, Power dissipation P
D
(mW)
160
P
C
P
C
, P
D
T
a
60
I
F
V
F
T
a
=
25°C
10
2
I
C
I
F
V
CC
=
5 V
T
a
=
25°C
50
40
Collector current I
C
(mA)
Forward current I
F
(mA)
120
10
80
P
D
30
1
20
M
ain
Di
sc te
on na
tin nc
ue e/
d
40
10
0
−20
20
60
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
−2
10
−1
1
10
−1
10
10
2
50
Collector-emitter cutoff current (Base open) I
CEO
(nA)
I
C
V
CE
I
F
=
30 mA
25 mA
180
40
Relative collector current
∆I
C
(%)
20 mA
Collector current I
C
(mA)
140
30
15 mA
10 mA
100
20
10
5 mA
60
0
0
2
4
6
8
2 mA
1 mA
10
12
20
−20
Collector-emitter voltage V
CE
(V)
I
F
=
50 mA
ce
Collector current I
C
(mA)
20 mA
10 mA
5 mA
Collector-emitter saturation voltage V
CE(sat)
(V)
/D
isc
on
10
2
tin
I
C
V
CE(sat)
0.10
0.08
Rise time t
r
(µs)
10
Ma
int
en
0.06
2 mA
1 mA
0.04
1
Pl
0.02
10
−1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
−40 −20
Collector-emitter saturation voltage V
CE(sat)
(V)
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∆I
C
T
a
10
4
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
Forward current I
F
(mA)
I
CEO
T
a
V
CE
=
20 V
10
3
10
2
10
1
10
−1
0
20
40
60
80
100
10
−2
−40 −20
0
20
40
60
80
100
ue
di
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
V
CE(sat)
T
a
10
2
t
r
I
C
10
R
L
=
1 kΩ
an
500
Ω
100
Ω
1
10
−1
Sig. in V
CC
V
1
V
2
V
2
V
1
50
Ω
0
20
40
60
80
100
10
−2
10
−1
1
R
L
t
r
10
t
d
90%
10%
t
f
10
2
Ambient temperature T
a
(°C)
Collector current I
C
(mA)
SHF00019AEK
3
4
Fall time t
f
(µs)
10
2
10
1
10
−1
10
−2
10
−1
V
1
50
Ω
Sig. in V
CC
1
CNC7S101
t
f
I
C
R
L
V
2
V
2
V
1
t
r
10
Collector current I
C
(mA)
Ma
int
en
100
Ω
500
Ω
t
d
an
t
f
R
L
=
1 kΩ
ce
90%
10%
10
2
/D
isc
10
−2
on
Relative power output P (dB)
10
−1
10
1
10
−3
1
tin
ue
di
10
10
2
Pl
Frequency f (kHz)
P
f
This product complies with the RoHS Directive (EU 2002/95/EC).
SHF00019AEK
I
F
=
5 mA
T
a
=
25°C
2 mA
M
ain
Di
sc te
on na
tin nc
ue e/
d
10
3
Sig. in
50
Ω
5 kΩ
50
Ω
Sig. out
R
L
=
100
Ω
+10
V
50 kΩ
100
µF
16 V
Sig. out
V
CC
=
10 V
Measurement circuit of
frequency characteristics
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Pin name
1: Anode, Cathode
2: Cathode, Anode
3: Emitter
4: Collector
Internal Connection
Package (Unit: mm)
LCTXXN4Z0001
2
1
3
4
Ma
int
en
an
ce
/D
isc
on
tin
ue
di
Top View
This product complies with the RoHS Directive (EU 2002/95/EC).
Pl
SHF00019AEK
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co L a d t ty
du
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ct
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life
an ut
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cy
on es
cle
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sta
co fo
ge
.jp rm
.
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/ ion
.
M
ain
Di
sc te
on na
tin nc
ue e/
d
CNC7S101
5
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