Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
(ON3731, ON3732, ON3734, ON3731A, ON3732A, ON3734A)
Optoisolators
Overview
The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the four-
channel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (V
CEO
> 350V).
CNZ3731/CNC2S501
LED Mark
5.2 max.
0.5 min.
4
3
Unit : mm
2.54 min.
4.58±0.3
M
ain
Di
sc te
on na
tin nc
ue e/
d
3.85±0.3
2.0
0
1
2
0.25
–0
7.62±0.3
6.2±0.5
Features
High collector to emitter breakdown voltage : V
CEO
> 300 V,
3.85±0.3
2.0
0.25
–0
High current transfer ratio with Darlington phototransistor output :
CTR = 4000% (typ.)
High I/O isolation voltage : V
ISO
≥
5000 V
rms
Small DIL package for saving mounting space
UL listed (UL File No. E79920)
7.62±0.3
6.2±0.5
+0.15
0 to
15˚
0 to
15˚
1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector
A-type models have a guaranteed internal insulating distance of 0.4 mm
CNZ3734/CNC7H501
LED Mark
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
+0.15
Applications
5.2 max.
0.5 min.
Telephones
FAX
Programmable controllers
on
Signal transfer between circuits with different potentials and impedances
tin
ue
3.85±0.3
2.0
Pin Connection
/D
2
Ma
int
en
1
an
CNZ3731
CNC2S501
CNZ3734
CNC7H501
1
ce
0 to
15˚
4
16
3
Top View
2
3
15
14
CNC7C501
CNC7C502
1
8
4
5
13
12
2
3
7
6
6
7
11
10
4
5
Top View
8
9
Top View
Note) The part numbers in the parenthesis show conventional part number.
0.25
–0
isc
7.62±0.3
6.2±0.5
1 , 3 , 5 , 7 : Anode
2 , 4 , 6 , 8 : Cathode
15˚
9,11,13,15: Emitter
0 to
10,12,14,16: Collector
16-0.5±0.1
16-1.2±0.15
2.54±0.25
19.82±0.5
Telephone exchange
8-0.5±0.1
8-1.2±0.15
2.54±0.25
A type : V
CEO
> 350 V
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
5˚
to 1
5˚
to 1
1: Anode
2: Cathode
3: Emitter
4: Collector
CNC7C501/CNC7C502
LED Mark
1
2
3
4
8
7
6
5
5.2 max.
0.5 min.
9.66±0.3
4-0.5±0.1
4-1.2±0.15
2.54±0.25
+0.15
Unit : mm
2.54 min.
Unit : mm
2.54 min.
1
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Input (Light
emitting diode) Pulse forward current
Power dissipation
Collector current
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
Total power dissipation
Symbol
V
R
I
F
I
FP*1
P
D*2
I
C
V
CEO
V
ECO
P
C*3
P
T
Optoisolators (Photocouplers)
Ratings
CNZ3731
6
50
1
75
150
300
0.3
CNC7C501
CNZ3734
CNC2S501
6
50
1
75
150
0.3
350
CNC7C502
CNC7H501
Unit
V
mA
A
mW
mA
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector power dissipation
300
320
150
300
200
320
Isolation voltage, input to output
Operating ambient temperature
Storage temperature
V
ISO*4
T
opr
T
stg
5000
–30 to +100
–55 to +125
*1
*2
*3
*4
150
200
mW
mW
˚C
V
rms
˚C
Pulse width
≤
100
µs,
repeat 100 pps
Input power derating ratio is 0.75 mW/˚C at Ta
≥
25˚C.
Output power derating ratio is 3.0 mW/˚C at Ta
≥
25˚C (CNZ3731, CNC2S501).
Output power derating ratio is 0.75 mW/˚C at Ta
≥
25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).
AC 1min., RH < 60 %
Electrical Characteristics
(Ta = 25˚C)
Parameter
I
R
Symbol
V
F
C
t
Reverse current (DC)
Input
Forward voltage (DC)
characteristics
Capacitance between pins
/D
Isolation capacitance, input to output
isc
DC current transfer ratio
on
Collector cutoff current
Output
characteristics Collector to emitter capacitance
tin
I
CEO
C
C
CTR
*1
V
CE
= 2V, I
F
= 1mA
C
ISO
R
ISO
t
r
*2
Ma
int
en
Isolation resistance, input to output
Transfer
characteristics Rise time
Fall time
*1
DC
Collector to emitter saturation voltage V
CE(sat)
I
F
= 1mA, I
C
= 2mA
I
C
×
100 (%)
I
F
current transfer ratio (CTR) is a ratio of output current against DC input current.
CTR =
*2
*3
t
r
: Time required for the collector current to increase from 10% to 90% of its final value
t
f
: Time required for the collector current to decrease from 90% to 10% of its initial value
2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
5000
–30 to +100
–55 to +125
Conditions
min
typ
max
10
1.5
Unit
µA
V
pF
V
R
= 3V
I
F
= 50mA
1.35
30
V
R
= 0V, f = 1MHz
V
CE
= 200V
200
nA
pF
%
Ω
V
CE
= 10V, f = 1MHz
f = 1MHz
10
1000
10
11
4000
0.7
40
pF
µs
V
V
ISO
= 500V
R
t
= 100Ω
V
CC
= 10V, I
C
= 10mA,
t
f*3
15
µs
1.0
an
ce
ue
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
P
D
— Ta
200
400
P
C
— Ta
10
5
I
FP
— D
R
I
FP
(mA)
Pulse width
≤
100µs
Ta = 25˚C
P
D
(mW)
P
C
(mW)
150
300
10
4
0
– 30
0
25
50
75
100
125
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
– 30
0
25
50
75
100
125
10
10
–3
10
–2
10
–1
M
ain
Di
sc te
on na
tin nc
ue e/
d
100
200
10
3
50
CNC7C501/
CNC7C502
100
CNZ3734/
CNC7H501
10
2
CNZ3731
CNC2S501
Allowable pulse forward current
Collector power dissipation
LED Power dissipation
1
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Duty ratio D
R
I
F
— V
F
I
C
— V
CE
I
C
— V
CE(sat)
60
160
10
3
Ta = 25˚C
Pc(max.)
I
F
= 5mA
Ta = 25˚C
Ta = 25˚C
50
I
F
= 5mA
2mA
1mA
I
C
(mA)
I
F
(mA)
I
C
(mA)
Collector current
120
3mA
10
2
40
2mA
Collector current
Forward current
30
80
1.5mA
10
0.5mA
20
1mA
40
1
10
tin
ue
0.5mA
0
Ma
int
en
10
3
an
I
C
— I
F
ce
/D
isc
Forward voltage V
F
(V)
on
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
2
4
6
8
10
–1
0
0.4
0.8
1.2
Collector to emitter voltage V
CE
(V)
Collector saturation voltage V
CE(sat)
(V)
CTR — I
F
Relative CTR — Ta
10
2
10
5
Relative DC current transfer ratio CTR (%)
V
CE
= 2V
Ta = 25˚C
10
6
120
V
CE
= 2V
Ta = 25˚C
I
F
= 1mA
V
CE
= 2V
DC current transfer ratio CTR (%)
I
C
(mA)
100
Collector current
10
10
4
80
1
10
3
60
10
–1
10
–1
1
10
10
2
10
2
10
–1
1
10
10
2
40
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Forward current I
F
(mA)
Ambient temperature Ta (˚C )
3
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
Optoisolators (Photocouplers)
V
CE(sat)
— Ta
1.6
10
I
F
= 1mA
I
C
= 2mA
1.4
10
–6
–5
I
CEO
— Ta
V
CE
= 200V
I
CEO
— V
CE
Ta = 25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
CEO
(A)
1.2
10
–7
0.6
10
–10
0.4
– 40 – 20
0
20
40
60
80
100
10
–11
– 40 – 20
Ambient temperature Ta (˚C )
Response time —
External load resistance characteristics
V
CC
= 10V
I
C
= 10mA
Ta = 25˚C
t
r
10
3
10
2
t
f
10
t
d
t
s
1
Ma
int
en
10
an
Frequency characteristics
V
CE
= 4V
Ta = 25˚C
I
C
= 10mA
ce
/D
isc
External load resistance R
L
(kΩ)
on
10
–1
10
–2
10
–1
1
10
A
V
(dB)
0
R
L
=
10Ω
Voltage gain
;;
;;;
– 10
100Ω
1kΩ
– 20
50Ω
5kΩ
50Ω
R
L
– 30
10
–1
1
10
10
2
10
3
Frequency f (kHz)
4
;;
;;
I
C
= 10mA
4mAp - p
d
pla inc
Pl
lu
ea
ne
;;;
d
se
pla m d
;
es
ne ain main foll
htt visit
d d
; ;
te ow
tn
p:/ fo
dis is e
;
na in
/w llo
n
ww wi co con a
;
ce nc g fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
20
40
60
80
100
10
–10
10
10
–2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Dark current
Dark current
1.0
10
–8
0.8
10
–9
10
–9
I
CEO
(A)
10
–8
10
–3
Ambient temperature Ta (˚C )
Collector to emitter voltage V
CE
(V)
Response time measurement circuit
Sig.IN
V
CC
(µs)
V
1
Response time
5ms
V
1
50Ω
R
L
V
2
t
d
t
r
90%
10%
t
s
t
f
tin
ue
Measurement circuit of
frequency characteristics
V
CC
+10V
50kΩ
16V
100µF
–
Sig.IN
Sig.OUT
+
Caution for Safety
¢
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
If you have any inquiries or questions about this book or our semiconductor products, please contact one
of our sales offices listed on the back or Semiconductor Company's Department.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
