Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Overview
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infrared
light emitting diode which is integrated with a high sensitivity Si
phototransistor in a single resin package.
1
4.3±0.3
2.7
0.35
3.4
1.8
3
C0.5
Chip
center
Unit : mm
0.15
0.05
+0.1
–0.05
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7
×
3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
2
4-0.7
4
4-0.5
0.85
1.5
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
Symbol Ratings
V
R
I
F
P
D
*1
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
*1
6
50
75
20
35
6
75
–25 to +85
I
C
V
CEO
V
ECO
P
C*2
T
opr
T
stg
– 40 to +100
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Output characteristics Collector cutoff current
Collector current
Symbol
V
F
I
R
I
CEO
I
C*1
I
F
= 20mA
V
R
= 3V
V
CE
= 20V
V
CC
= 2V, I
F
= 4mA. R
L
= 100Ω, d = 1mm
V
CC
= 2V, I
F
= 4mA, R
L
= 100Ω
I
F
= 20mA, I
C
= 0.1mA
V
CC
= 5V, I
C
= 0.1mA,
R
L
= 1000Ω
30
40
23
Conditions
min
typ
1.2
max
1.4
10
100
160
100
0.4
Unit
V
µA
nA
µA
nA
V
µs
Leakage current
I
D
Transfer
Collector to emitter saturation voltage V
CE(sat)
characteristics
t
r*2
Response time
t
f*2
*1
Output Current (IC) measurement
method (see figure below.)
Glass plate
Evaporated Al
d = 1mm
*2
Response time measurement
circuit (see figure below.)
Glass plate
Evaporated Al
d = 1mm
Sig.IN
t
r
: Rise time
t
f
: Fall time
,,,
I
F
R
L
Input and output are handled electrically.
This product is not designed to withstand radiation.
,,
,,
,,
I
C
V
CC
Sig.IN
50Ω
R
L
Sig.
Sig.OUT
OUT V
CC
,,
,,
,,
2 3
4
Pin connection
1: Anode 3: Emitter
2: Cathode 4: Collector
1
4 1
2
Pin connection
1: Emitter 3: Anode
2: Collector 4: Cathode
3
(Note) Tolerance unless otherwise specified is
±0.2
CNB1001
CNB1002
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
Color indication of classifications
Class
Q
R
90%
10%
,
,,,
,,,
,,,
,
,,,
,,,
,,
I
C
(µA)
23 to 50
41 to 90
74 to 160
Color
Orange
White
Light blue
S
t
r
t
f
1
CNB1001,CNB1002
Reflective Photosensors (Photo Reflectors)
I
F
, I
C
— Ta
60
60
I
F
— V
F
800
Ta = 25˚C
I
C
— I
F
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
d = 1mm
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
I
C
(µA)
Collector current
600
Forward current, collector current
40
40
30
I
C
Forward current
30
400
20
20
200
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
8
16
24
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward current I
F
(mA)
V
F
— Ta
1.6
600
I
C
— V
CE
160
d = 1mm
Ta = 25˚C
I
C
— Ta
V
CC
= 2V
I
F
= 4mA
R
L
= 100Ω
120
V
F
(V)
1.2
10mA
1mA
0.8
I
C
(µA)
I
F
= 20mA
400
15mA
300
10mA
8mA
100
6mA
4mA
Relative output current
Forward voltage
Collector current
I
C
(%)
I
F
= 50mA
500
80
200
0.4
40
0
– 40 – 20
0
20
40
60
80
100
0
2mA
0
1
2
3
4
5
6
7
8
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
V
CE
= 10V
10
3
t
r
, t
f
— I
C
100
V
CC
= 5V
Ta = 25˚C
: t
r
: t
f
10
2
R
L
= 2kΩ
I
C
— d
V
CE
= 2V
Ta = 25˚C
I
F
= 4mA
I
C
(%)
t
r
, t
f
(µs)
1
80
Rise time , fall time
10
–1
Relative output current
60
1kΩ
10
100Ω
Dark current
10
–2
40
1
10
–3
20
10
–4
– 40 – 20
0
20
40
60
80
100
10
–1
10
–2
10
–1
1
10
0
0
2
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
Distance d (mm)
2
,
,
d
4
6
8
10
I
CEO
(µA)
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