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CNA1311K

产品描述Photo Interrupter
产品类别光电子/LED    光电   
文件大小454KB,共5页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
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CNA1311K概述

Photo Interrupter

CNA1311K规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Panasonic(松下)
包装说明2.60 X 4 MM, 3.30 MM HEIGHT, ULTRA MINIATURE, PLASTIC, PISSR104-001, 4 PIN
Reach Compliance Codeunknow
Coll-Emtr Bkdn Voltage-Mi35 V
配置SINGLE
最大暗电源100 nA
最大正向电流0.05 A
间隙大小1 mm
安装特点THROUGH HOLE MOUNT
功能数量1
最大通态电流0.0006 A
最大通态电压35 V
标称通态集电极电流0.05 mA
最高工作温度85 °C
最低工作温度-25 °C
光电设备类型TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型Transis
标称槽宽1 mm
表面贴装NO

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transmissive Photosensors (Photo lnterrupters)
CNA1311K
Photo lnterrupter
For contactless SW and object detection
Overview
CNA1311K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode
chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
*1
Forward current
Reverse voltage
Input
(Light emitting diode)
Collector-emitter voltage
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Output
(Photo transistor)
Collector power dissipation
*2
Reverse current
Input
characteristics Forward voltage
Ma
int
en
an
Parameter
ce
Electrical-Optical Characteristics
T
a
= 25°C±3°C
/D
isc
Note) *1: Input power derating ratio is 1.0 mW/°C at T
a
25°C
*2: Output power derating ratio is 1.0 mW/°C at T
a
25°C
on
tin
ue
Storage temperature
di
Operating ambient temperature
Symbol
I
R
V
F
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pla m d m es
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d d te te ow
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ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Symbol
P
D
I
F
Rating
75
50
6
Unit
mA
V
V
V
mW
V
R
V
CEO
V
ECO
I
C
35
6
20
75
mA
°C
°C
P
C
mW
T
opr
T
stg
–25 to +85
–40 to +100
Conditions
Min
Typ
1.2
Max
10
1.4
V
R
= 3 V
I
F
= 20 mA
M
ain
Di
sc te
on na
tin nc
ue e/
d
Features
Ultraminiature: 2.6 mm
×
4.0 mm (height: 3.3 mm)
Highly precise position detection: 0.05 mm
Gap width: 1.0 mm
Collector current
Collector-emitter saturation voltage
Transfer
characteristics Rise time
*
Fall time
*
Note) 1. Input and output are practiced by electricity.
2. This device is designed by disregarding radiation.
3. *: Switching time measurement circuit
Unit
µA
V
nA
µA
V
µs
µs
Pl
Output
Collector-emitter cutoff current
characteristics (Base open)
I
CEO
I
C
V
CE
= 20 V
100
V
CE
= 5 V, I
F
= 5 mA
I
F
= 10 mA, I
C
= 50
µA
V
CC
= 5 V, I
C
= 0.1 mA,
R
L
= 1 000
W
50
50
50
600
0.4
V
CE(sat)
t
r
t
f
Sig. in
V
CC
Sig. out
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
: Fall time
50
R
L
Publication date: October 2008
SHG00024CED
1

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