电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

C1206Q750J2GAGTU

产品描述Ceramic Capacitor, Multilayer, Ceramic, 200V, 5% +Tol, 5% -Tol, BP, -/+30ppm/Cel TC, 0.000075uF, 1206,
产品类别无源元件    电容器   
文件大小160KB,共8页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

C1206Q750J2GAGTU概述

Ceramic Capacitor, Multilayer, Ceramic, 200V, 5% +Tol, 5% -Tol, BP, -/+30ppm/Cel TC, 0.000075uF, 1206,

C1206Q750J2GAGTU规格参数

参数名称属性值
是否Rohs认证不符合
Objectid926579311
包装说明, 1206
Reach Compliance Codenot_compliant
ECCN代码EAR99
YTEOL7.82
电容0.000075 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度1.6 mm
JESD-609代码e4
长度3.07 mm
多层Yes
负容差5%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式SMT
包装方法TR, Plastic, 7 Inch
正容差5%
额定(直流)电压(URdc)200 V
系列C1206(BP,200V)
尺寸代码1206
温度特性代码BP
温度系数30ppm/Cel ppm/°C
端子面层Gold (Au)
宽度1.52 mm

文档预览

下载PDF文档
CERAMIC HIGH RELIABILITY
GENERAL INFORMATION GR900 SERIES
HIGH RELIABILITY — GR900
GR900 capacitors are intended for use in any application where
the chance of failure must be reduced to the lowest possible
level. While any well-made multilayer ceramic capacitor is an
inherently reliable device, GR900 capacitors receive special
attention in all phases of manufacture including:
— Raw Materials Selection
— Special Designs
— Clean Room Production
— Individual Batch Testing
— C-SAM (when applicable)
— Singular Batch Identity is Maintained
— Destructive Physical Analysis
These parts are well worth the added investment in comparison
to the cost of a device or system failure.
Typical applications include:
Medical, Aerospace, Communication Satellites, Radar, Guidance
Systems.
SCREENING AND SAMPLE TESTS
Each batch receives the following testing/inspections:
Preliminary:
1. Destructive Physical Analysis: (DPA) - A sample is pulled from
each lot and examined per EIA-469 and KEMET’s strict internal
void and delamination criteria. Sampling plan is per MIL-PRF-123.
2. C-SAM - May be performed on batches failing to meet the
DPA criteria for removal of marginal product. Not required on
each lot.
Group A
1. Thermal Shock
— Materials used in the construction of mul-
tilayer ceramic capacitors possess various thermal coefficients of
expansion. To assure maximum uniformity, each part is temper-
ature cycled in accordance to MIL-STD-202, Method 107,
Condition A with Step 3 being 125°C. Number of cycles shall be
20 (100% of lot).
2. Voltage Conditioning
— One of the most strenuous environ-
ments for any capacitor is the high temperature/high voltage test.
All units are subject to twice-rated voltage to the units at the max-
imum rated temperature of 125°C for a minimum of 168 hours
and a maximum of 264 hours. The voltage conditioning may be
terminated at any time during 168 hours to 264 hours time inter-
val that confirmed failures meet the requirements of the PDA dur-
ing the last 48 hours of 1 unit or .4% (100% of lot).
Optional Voltage Conditioning (Accelerated Voltage
Conditioning)
— All conditions of the standard voltage condi-
tioning apply with the exception of increased voltage and
decreased test time. Refer to MIL-PRF-123 for the proper formula.
*Step 5 is performed on chips at this point (100% of lot).
3. Dielectric Withstanding Voltage
— 250% of the dc rated volt-
age at 25°C (100% of lot).
4. Insulation Resistance
— The 25°C measurement with rated
voltage applied shall be the lesser of 100 GΩ or 1000 megohm-
microfarads (100% of lot).
*5. Insulation Resistance
— The 125°C measurement with
rated voltage applied shall be the lesser of 10 GΩ or 100
megohm-microfarads (100% of lot). For chips, 125°C IR is per-
formed prior to Step 3 above.
6. Storage
at 150°C for 2 hours minimum without voltage applied
followed by a 12-hour minimum stabilization period (temperature
characteristic BX only).
7. Capacitance
— Shall be within specified tolerance at 25°C
(100% of lot). (Aging phenomenon is taken into account for BX
dielectric to obtain capacitance.)
8. Dissipation Factor
— Shall not exceed 2.5% for X7R (BX)
dielectric, 0.15% for C0G (BP) dielectric at 25°C. (100% of lot.)
9. Percent Defective Allowable (PDA)
— The overall PDA is 8%
for parts outside the MIL-PRF-123 values. The PDA is per MIL-
PRF-123 for all parts that are valid MIL-PRF-123 values. The PD
includes steps 1 through 8 above with the following exceptions.
Capacitance exclusion - capacitance values no more than 5% or
.5pF, whichever is greater for BX characteristic or 1% or .3pF,
whichever is greater for BP characteristic beyond specified toler-
ance limit, shall be removed from the lot but shall not be consid-
ered defective for determination of the PD.
Insulation Resistance at 25°C — Product which is not acceptable
for twice the military limit but is acceptable per the military limit,
is removed from the lot but shall not be considered defective for
determination of the PD.
10. Visual and Mechanical Examination
— Performed per MIL-
PRF-123 criteria.
11. Radiographic Examination (Leaded Devices Only)
Radial devices receive a one-plane X-ray.
12. Destructive Physical Analysis (DPA)
— A sample is exam-
ined on each lot per EIA-469. Sampling Plan is per MIL-PRF-123.
STANDARD PACKAGING
All products are packaged in trays except C512 capacitors which
are packaged 1 piece per bag.
DATA PACKAGE
A data package is sent with each shipment which contains:
1.
Final Destructive Physical Analysis (DPA) report.
2.
Certificate of Compliance stating that the parts meet all applic-
able requirements of the appropriate military specification to the
best failure level to which KEMET is approved.
3.
Summary of Group A Testing.
12
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 (864) 963-6300 • www.kemet.com
建议提供STR71X的最小系统原理图。
这些方面可以参考一下zlg的书,看看竞争对手是如何做的。最好做一个PROTEL99SE的图,DXP还不是很普及的。STR9也可以,只不过我现在不用。...
heima3041 stm32/stm8
整流杂谈(四)
上一次我们谈到波形系数,定义为有效值和平均值之比。一般地说,波形越是窄而高,有效值和平均值之比就越大,换句话说波形系数越大。234769在电子设备中,常用图01所示的两种整流电路:全波整流 ......
maychang 电源技术
利用AD5752R DAC提供软件可配置的16位、双通道、单极性双极性电压输出
利用AD5752R DAC提供软件可配置的16位、双通道、单极性双极性电压输出 ...
蓝雨夜 ADI 工业技术
Freescale USB接口类单片机特点及应用(简介)
如题,一篇简要讲述单片机的文章...
ptwang 单片机
初学者-WinCE嵌入式系统板的选择
请各位老大推荐开发所用的硬件环境,什么公司的什么板子比较好?(目标是工业用) 最好是基于WinCE6.0的,可以自己定制CE的,可扩充摄像头的 本人初学,谢谢!...
184848715 嵌入式系统
一本不错的书:UCOS ARM 移植要点详解
31842 黄燕平 364页 主目录 UCOS ARM 移植要点详解............................................................................. 1 前言 ....................................... ......
冰人 实时操作系统RTOS

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2919  2731  35  332  1797  59  55  1  7  37 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved